PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = RDS(on) 250 V 64 A 49 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M 250 250 V V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25 C 64 A IDM TC = 25 C, pulse width limited by TJM 160 A IAR TC = 25 C 60 A EAR TC = 25 C 40 mJ EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 10 V/ns PD TO-3P (IXTQ) Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-268 D (TO-3P) 400 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C TO-268 (IXTT) G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features l l 1.13/10 Nm/lb.in. l 5.5 5.0 (TAB) S G TC = 25 C TL TSOLD G g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25 C, unless otherwise specified) Characteristic Values Min. Typ. Max. l l BVDSS VGS = 0 V, ID = 250 A 250 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % TJ = 125 C V 5.0 V 100 nA 25 250 A A 49 m l Easy to mount Space savings High power density DS99120E(12/05) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXTQ 64N25P IXTT 64N25P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 Ciss Coss 30 S 3450 pF 640 pF 155 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 21 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 23 ns td(off) RG = 4 (External) 60 ns 20 ns 105 nC 24 nC 53 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31 C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-3P) C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 64 A ISM Repetitive 160 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V 200 3.0 TO-268 (IXTT) Outline ns C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 64N25P IXTT 64N25P Fig. 1. Output Characte ris tics @ 25C Fig. 2. Exte nde d Output Characte r is tics @ 25C 64 180 V GS = 10V 56 9V 140 40 I D - Amperes I D - Amperes 48 V GS = 10V 160 9V 8V 7V 32 24 120 100 8V 80 7V 60 6V 16 40 8 6V 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 Fig. 3. Output Characte ris tics @ 125C 12 14 16 18 20 2.8 V GS = 10V 56 R D S ( o n ) - Normalized 7V 40 32 6V 24 V GS = 10V 2.5 9V 8V 48 I D - Amperes 10 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 64 16 5V 8 2.2 1.9 I D = 64A 1.6 I D = 32A 1.3 1 0.7 0 0.4 0 1 2 3 4 5 6 7 8 -50 V D S - V olts 0.5 ID25 V alue vs . ID 3.7 3.4 0 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 70 V GS = 10V 60 TJ = 125C 3.1 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 50 2.8 I D - Amperes R D S ( o n ) - Normalized 8 V D S - V olts V D S - V olts 2.5 2.2 1.9 1.6 40 30 20 TJ = 25C 1.3 10 1 0 0.7 0 30 60 90 120 I D - A mperes 150 180 (c) 2006 IXYS All rights reserved http://store.iiic.cc/ -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 64N25P IXTT 64N25P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 60 120 105 50 TJ = -40C 25C 125C 40 - Siemens 75 30 fs 60 45 TJ = 125C 30 20 g I D - Amperes 90 25C -40C 15 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 0 8 15 30 45 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 75 90 105 120 135 Fig. 10. Gate Char ge 10 180 9 150 120 V G S - Volts I S - Amperes 60 I D - A mperes 90 60 TJ = 125C V DS = 125V 8 I D = 32A 7 I G = 10m A 6 5 4 3 30 2 TJ = 25C 1 0 0 0.4 0.6 0.8 1 V S D - V olts 1.2 1.4 0 10 20 30 Q 40 G 50 60 70 90 100 110 Fig. 12. For w ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 1000 10000 f = 1MH z TJ = 150C C iss 1000 TC = 25C R DS(on) Lim it I D - Amperes Capacitance - picoFarads 80 - nanoCoulombs C oss 100 25s 1m s 100s 10m s 10 DC C rs s 100 1 0 5 10 15 20 25 V D S - V olts 30 35 40 10 IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 100 V D S - V olts 1000 IXTQ 64N25P IXTT 64N25P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - C / W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 1000