FEATURES
DTrenchFETr Power MOSFET
D175_C Junction Temperature
DPWM Optimized
D100% Rg Tested
APPLICATIONS
DPrimary Side Switch
SUD25N15-52
Vishay Siliconix
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
1
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
150
0.052 @ VGS = 10 V 25
150 0.060 @ VGS = 6 V 23
D
G
S
N-Channel MOSFET
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information:
SUD25N15-52
SUD25N15-52—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ = 175
_
C)b
TC = 25_C
ID
25
Continuous Drain Current (TJ = 175_C)
b
TC = 125_CID14.5
Pulsed Drain Current IDM 50 A
Continuous Source Current (Diode Conduction) IS25
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH EAR 31 mJ
Maximum Power Dissipation
TC = 25_C
P
136b
W
Maximum Power Dissipation TA = 25_CPD3aW
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
JtitAbit
a
t v 10 sec
R
15 18
Junction-to-Ambienta
Steady State RthJA 40 50 _C/W
Junction-to-Case (Drain) RthJC 0.85 1.1
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
SUD25N15-52
Vishay Siliconix
www.vishay.com
2
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA150
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 150 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V, TJ = 125_C 50 mA
g
DSS
VDS = 150 V, VGS = 0 V, TJ = 175_C 250
m
On-State Drain CurrentbID(on) VDS = 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 5 A 0.042 0.052
Drain Source On State Resistanceb
rDS( )
VGS = 10 V, ID = 5 A, TJ = 125_C 0.109
W
Drain-Source On-State Resistance
b
rDS(on) VGS = 10 V, ID = 5 A, TJ = 175_C 0.145 W
VGS = 6 V, ID = 5 A 0.047 0.060
Forward Transconductancebgfs VDS = 15 V, ID = 25 A 40 S
Dynamica
Input Capacitance Ciss 1725
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 216 pF
Reverse Transfer Capacitance Crss 100
Total Gate ChargecQg33 40
Gate-Source ChargecQgs VDS = 75 V, VGS = 10 V, ID = 25 A 9nC
Gate-Drain ChargecQgd
12
Gate Resistance Rg1 3 W
Turn-On Delay Timectd(on) 15 25
Rise TimectrVDD = 50 V, RL = 3 W70 100
ns
Turn-Off Delay Timectd(off)
,
ID ^ 25 A, VGEN = 10 V, Rg = 2.5 W25 40 ns
Fall Timectf60 40
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current ISM 50 A
Diode Forward VoltagebVSD IF = 25 A, VGS = 0 V 0.9 1.5 V
Source-Drain Reverse Recovery Time trr IF = 25 A, di/dt = 100 A/ms 95 140 ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
SUD25N15-52
Vishay Siliconix
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0 1020304050
0
500
1000
1500
2000
2500
0 30 60 90 120 150
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
− Gate-to-Source Voltage (V) − On-Resistance (
Qg − Total Gate Charge (nC)
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
rDS(on) W)V GS
− Transconductance (S)gfs
0
10
20
30
40
50
0246810
0
4
8
12
16
20
0 102030405060
0.00
0.02
0.04
0.06
0.08
0.10
0 1020304050
0
10
20
30
40
50
01234567
−55_C
6 V
TC = 125_C
VDS = 75 V
ID = 25 A
VGS = 10 thru 7 V
4 V
VGS = 10 V
VGS = 6 V
TC = −55_C25_C
125_C
Coss
Ciss
ID − Drain Current (A)
5 V 25_C
Crss
SUD25N15-52
Vishay Siliconix
www.vishay.com
4
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
−50 −25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V)
− Source Current (A)IS
100
10
1
0.3 0.6 0.9 1.2
VGS = 10 V
ID = 5 A
TJ = 25_C
TJ = 150_C
0
rDS(on) − On-Resiistance
(Normalized)
THERMAL RATINGS
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
10
0.1
0.1 1 10 1000
Limited by rDS(on)
1
100
TC = 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10−410−310−210−1110
Normalized Effective Transient
Thermal Impedance
Maximum Avalanche Drain Current
vs. Case Temperature
TC − Case Temperature (_C)
− Drain Current (A)ID
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
0.2
0.1
Duty Cycle = 0.5
10 ms
100 ms
1 s, dc
30
100 ms
10 ms
100
1 ms
0.05
0.02
Single Pulse