PIN RADIATION DETECTORS Features High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voitage Description Silicon PIN devices are effective detectors of nuclear and electromagnetic radiation. This includes gamma radiation, electrons, and X-rays. The detectors can be used across the temperature range of 55C to + 175C instead of being restricted to use at low temperatures. The absorbed radiation produces electron- hole pairs in the space charge region. These charges are swept out by the applied field and result in a current flow proportional to the rate of absorbed radiation. The Unitrode UM9441 series utilizes high resistivity material and is designed to have a uniform area mesa structure to define the active volume. The current sensitivity of ABSOLUTE MAXIMUM RATINGS Reverse Voltage ....... 100V Photocurrent.......... 1A Storage Temperature... 55C to +200C Operating Temperature . 55C to +175C MECHANICAL SPECIFICATIONS UM9441 YELLOW CATHODE BAND -200 DIA. MAX. 28 Ort) Oa, \ 4 (508) .027 (0.69) ni { . Al TK. _ t 4 yt 975 150 975 MIN, e MAX pt - MIN, | (24.8) (3.81) (24.8) Dimensions in inches (millimeters) 675 UM9441 these devices is proportional only to the l-region volume and is independent of tem- perature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no degradation in gamma sensitivity resulting from a total dose of 10'4 neutrons/icm? of 1 MeV equivalent. Package The UM9441 is an axially leaded device constructed by metallurgically bonding the PIN chip in between two molybdenum refrac- tory pins that are typically 0.125 inches in diameter and 0.050 inches long. Hyper-pure glass is then fused over this bond to forma voidiess seal. Leads are then brazed to ends of molybdenum pins. This results in a high- reliability package using materials so well thermally matched that the UM9441 can withstand temperature shock or cycling from 196C to +300C. (LL) am UNITRODE nei)Electrical Specifications (at 25C) UM9441 Test Min Typ Max. Units Test Conditions Va =50V rads (Si) Photocurrent 4.0 6.0 mA 10 sec 2.5 MeV Flash X-Ray Photocurrent Rise Time 10 ns lon Physics Corp. (10%-90%) FX-25 Capacitance "10 15 pF F = 1 MHz, V = 50V Reverse Current 1.0 pA Va = 50V Minority Carrier Lifetime | 2.0 pS i; = 10mA TYPICAL PHOTOCURRENT SENSITIVITY TYPICAL VOLTAGE SENSITIVITY 1000 30 25MevV 8 0 PIN Reverse Voltage 50V 70 6.0 5.0 = 2 9 o 4.0 3.0 06 rads (Si) Rate 1 Photocurrent (mA) Photocurrent (mA) =~ 2 o 2.0 25Mev | Flash X-Ray 0 25 50 75 100 105 10 107 108 rads (Si) PIN Reverse Voltage (V) Absorbed Dose Rate _- sec RELIABILITY The UM9441 is consistent with Unitrodes reputation as a manufacturer of high reliabil- ity semiconductors. Unitrode is equipped to perform JAN type testing, base-lining and documental conformance to a wide range of reliability testing. This commitment to reliability has enabled Unitrode to be a qualified supplier of semiconductor devices to many high-reliability programs such as: APOLLO MINUTEMAN DRAGON SPRINT HAWK TRIDENT MARINER VIKING UNITRODE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 676 TWX (710) 326-6509 TELEX 95-1064 PRINTED IN U.S.A.