MPSW3725
NPN Transistor
This device is designed for high current, low impedance line
driver applications. Sourced from Process 26.
Absolute Maximum Ratings T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 1.2 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics T A = 25°C unless otherwise noted
TO-226
CBE
1999 Fairchild Semiconductor Corporation
Symbol Characteristic Max Units
MPSW3725
PDTotal Device Dissipation
Derate above 25°C1.0
8.0 W
mW/°C
RθJC Thermal Resis t ance, Junct i on to Cas e 125 °C/W
RθJA Thermal Resis t ance, Junct i on to Ambient 50 °C/W
MPSW3725
MPSW3725
Electrical Characteristics T A= 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO Collector-Emit ter Breakdown
Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CES Collector-Emit ter Breakdown
Voltage IC = 10 µA, VBE = 0 60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, ICE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 50 V, I E = 0
VCB = 50 V, I E = 0, TA = 100°C100
10 nA
µA
ON CHARACTERISTICS*
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 50 mA , VCE = 10 V,
f = 100 MHz 250 MHz
Cobo Output Capacitance VCB = 10 V, I E = 0,
f = 1.0 MHz 25 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 1.0 MHz 100 pF
SWITCHING CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1. 0 V
IC = 100 mA, V CE = 1. 0 V
IC=100mA,VCE=1.0V,TA=-55°C
IC = 300 mA, V CE = 1. 0 V
IC = 500 mA, V CE = 1. 0 V
IC=500mA,VCE=1.0V,TA=-55°C
IC = 800 mA, V CE = 2. 0 V
IC = 1.0 A, VCE = 5.0 V
30
60
30
40
35
20
20
25
180
VCE(sat)Collector-Emitt er S aturation Voltage IC = 10 mA , IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, I B = 100 m A
0.25
0.26
0.4
0.52
0.8
0.95
V
V
V
V
V
V
VBE(sat)Base-Emitter Saturat i on V ol tage IC = 10 mA , IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, I B = 100 m A
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
NPN Transistor
(continued)
ton Turn-on Time VCC = 30 V, VBE = 3.8 V , 22 ns
tdDelay Tim e IC = 500 mA, I B1 = 50 mA 10 ns
trRise Ti me 12 ns
toff Turn-off Time VCC = 30 V, IC = 500m A 250 ns
tsStorage Tim e IB1 = IB2 = 50 mA 235 ns
tfFall Time 15 ns
Symbol Parame ter Test Conditions Min Typ Max Units
Typical Characteristics
Input / Output Capacitance
vs Reverse Bias
0.1 1 10 50
1
5
10
50
100
REVERSE BIAS VO LTAGE ( V)
CAPACITAN CE (pF)
F = 1 MHz
C
obo
C
ibo
150
100
50
25
Base-Emitter Saturati on
V olta ge vs Col lector Curre nt
1 10 100 1000
0
0.2
0.4
0.6
0.8
1
1.2
I - C OLLECTOR C U RR ENT (mA )
V - BASE- EMITTER VOLTAG E( V)
BESAT
125 °C
- 4 0 °C
C
β= 1 0
25 °C
Base-Emitter ON Voltage vs
Collec t or Cur re nt
0.1 1 10 25
0.2
0.4
0.6
0.8
I - C OLLECTOR CUR RENT (mA)
V - BASE- EMIT TER O N VO LTAG E ( V )
BE(ON)
C
V = 1.0V
CE
125 °C
- 4 0 °C
25 °C
Typic a l P u lse d Curre nt G ain
vs Collector Cur rent
0.001 0.01 0.1 1
0
50
100
150
200
I - COLLEC TOR CURRENT (A)
h - TYPICAL PU LSED C URRENT GAI N
FE
C
V = 1 .0V
CE
125 °C
- 40 °C
25 °C
Co l lecto r-Emi tter Satu r ati on
Voltage vs Collector Current
1 10 100 1000
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLE CTOR-EMITTER VOLTAGE (V)
CESAT
C
β= 10
125 °C
- 40 °C
25 °C
Collector-Cu toff Current
vs Ambien t Temperature
25 50 75 100 125 150
0.1
1
10
100
T - AM BIE NT TE MPE RATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
°
CBO
MPSW3725
NPN Transistor
(continued)
MPSW3725
NPN Transistor
(continued)
Typical Characteristics (continued)
Co ntours of Co nstan t
Bandwi dt h Pr od uct (f )
10 50 100 500 1000
0.1
1
10
I - COLLECTOR CURR E NT (mA)
V - COLLECTOR VOLTAGE (V)
C
CE
T
450 M Hz
400 M Hz
350 MHz
250 M Hz
100 M Hz
Powe r Dissipati on vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
TO-226
Typical Characteristics (continued)
Rise Time vs. Collector and
Turn On Base Current s
50 100 200 300 400 500
10
20
30
40
50
100
I - COLLECTO R CURRENT (mA)
I - T URN ON BASE CU RRENT (mA)
C
V = 30V
CC
B1
5 ns
15 ns
t = 3 n s
r
8 ns
Storage Tim e vs . Turn On
and Turn Off Base Currents
0 100 200 300
0
100
200
300
I - TURN ON BASE CU RRENT ( mA )
I - TURN OFF BA SE CURR ENT (mA )
B1
V = 30V
CC
B2
I = 800 mA
C
35 ns
45 ns
t = 20 ns
s
Storage Time vs. Turn On
and Turn Off Base Currents
0 50 100 150 200
0
50
100
150
200
I - TUR N ON BA SE CURR ENT ( mA )
I - TUR N OFF BA SE CURRENT (mA )
B1
V = 30V
CC
B2
I = 500 mA
C
25 ns
40 ns
t = 20 n s
s
50 ns
Storage Time vs. Turn On
a nd Turn Off Bas e Currents
0 1020304050
0
10
20
30
40
50
I - T URN ON BASE CU RRENT (mA)
I - TURN OFF BA SE CURR ENT (mA)
B1
V = 30V
CC
B2
I = 100 m A
C
60 ns
40 ns
t = 20 n s
s
80 ns
MPSW3725
NPN Transistor
(continued)
MPSW3725
NPN Transistor
(continued)
Typical Characteristics (continued)
F all Time vs. Tu rn On
a nd Turn Off B a se Cu r rents
0 50 100 150 200
0
50
100
150
200
I - TURN ON BAS E CU RRENT ( mA )
I - TURN OFF BA SE CURR ENT (mA )
B1
V = 30V
CC
B2
I = 500 m A
C
7 ns
6 ns
t = 5 n s
f
10 ns
F all Time vs. Tu rn On
and Tu rn Off Base Cu rren ts
0 100 200 300
0
100
200
300
I - TUR N ON BA SE CURRENT (mA)
I - TUR N OFF BASE CU RR ENT ( mA)
B1
V = 30V
CC
B2
I = 800 mA
C
15 ns
20 ns
t = 10 ns
f
F a ll Ti m e v s . Turn On
a nd Turn Off Bas e Currents
0 1020304050
0
10
20
30
40
50
I - T URN ON BASE CU RRENT (mA)
I - TURN OFF BA SE CURR ENT (mA)
B1
V = 30V
CC
B2
I = 100 m A
C
30 ns
15 ns
t = 12 n s
f
- 3.8 V 30 V
VOUT
100 ΩΩ
ΩΩ
Ω
1.0 KΩΩ
ΩΩ
Ω
VIN
VIN = 9.7 V
tr and tf ≤ 1 ns
PW = 1.0 µs
ZIN = 50 Ω
Duty Cycle < 2%
T o sampling scope
tr < 1.0 ns
ZIN ≥ 100 KΩ
62 ΩΩ
ΩΩ
Ω
43 ΩΩ
ΩΩ
Ω
10 µµ
µµ
µF
1.0 µµ
µµ
µF
15 ΩΩ
ΩΩ
Ω
FIGURE 1: Switching Time Test Circuit
(IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA)
Test Circuit
MPSW3725
NPN Transistor
(continued)
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
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