Feb. 2009
1
CM1400DU-24NF
APPLICATION
UPS & General purpose inverters, etc
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
● IC ................................................................ 1400A
● VCES ......................................................... 1200V
● Insulated Type
● 2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
B : VHR-5N
A : VHR-2N
(J. S. T. Mfg. Co. Ltd)
A,B HOUSING Type
Tc measured point
(The side of Cu
base plate)
Tc measured point
(The side of Cu
base plate)
B
A
9-M6 NUTS 12
MOUNTING HOLES
PPS
LABEL
10.5
5.5
129.5
12
11 1921
25.1
15.7
18
42 42
15.7
42
34.6+1.0
–0.5
34.6 +1.0
–0.5
150
166
38
±0.25
42.5
±0.25
38
±0.25
137.5
±0.25
74
±0.25
74
±0.25
4
1.9
±0.2
14 1414141414
1414
8-f6.5
C2E1
E2 C1
C1E1G1
E2G2C2
2
C2
C2E1 E2 C1
C1
G1 E1 G2E2
CIRCUIT DIAGRAM
Feb. 2009
2
VCE = VCES, VGE = 0V
IC = 140mA, VCE = 10V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
Ic = 1400A, terminal-chip
VCE = 10V
VGE = 0V
VCC = 600V, IC = 1400A, VGE = 15V
VCC = 600V, IC = 1400A
VGE = ±15V
RG = 0.22Ω, Inductive load
IE = 1400A
IE = 1400A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied (1/2 module)
Case temperature measured point is just under the chips (IGBT part)
Case temperature measured point is just under the chips (FWDi part)
1200
±20
1400
2800
1400
2800
3900
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
1400
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
V
V
W
°C
°C
Vrms
N • m
N • m
g
A
A
1
8
1.5
2.5
—
—
220
25
4.7
—
800
300
1000
300
700
—
3.2
0.032
0.053
—
0.014
0.023
2.2
mA
V
µA
V
mΩ
nF
nC
ns
ns
µC
V
K/W
Ω
—
7
—
1.8
2.0
0.286
—
—
—
7200
—
—
—
—
—
90
—
—
—
0.016
—
—
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.22
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
(without lead resistance)
Module lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
(without lead resistance)
Thermal resistance*3
Contact thermal resistance*2
Thermal resistance*1
External gate resistance
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*4 : The operation temperature is restrained by the permission temperature of female connector.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
*4
Isolation voltage
Weight
G-E Short
C-E Short
TC’ = 94°C*1
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.Min. Max.
—
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
ICES
VGE(th)
IGES
VCE(sat)
(chip)
R(lead)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
(chip)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Rth(j-c’)R
RG
Symbol Parameter Test conditions Limits
IC = 1400A, VGE = 15V (Note 4)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A) GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
0
2000
2500
2800
1500
1000
500
0246810
T
j
= 25°C
V
GE
= 20V
15V 12V
11V
10V
9V
8V
13V
0
2000
2500
1500
1000
500
0481216 20
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
1
2
3
4
5
00 500 1000 1500 2000
2500 2800
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
02068 12 1610 14 18
T
j
= 25°C
I
C
= 1400A
I
C
= 560A
I
C
= 2800A
10
–1
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
C
ies
C
oes
C
res
V
GE
= 0V
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
10
2
2
3
5
7
10
3
2
3
5
7
10
4
01234
T
j
= 25°C
T
j
= 125°C
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
0
4
8
16
12
20
0 2000 4000 6000 8000 10000
VCC = 400V
IC = 1400A
VCC = 600V
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE CHARGE Q
G
(nC)
GATE-EMITTER VOLTAGE V
GE
(V)
10
2
10
3
57
10
4
23 57
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
1
23
td(off)
td(on)
tf
tr
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.22Ω
Tj = 125°C
Inductive load
10
2
10
3
23 57
10
4
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
trr
Irr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.22Ω
Tj = 125°C
Inductive load
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
22
10
3
357 2
10
4
357
I
C
-E
SW
(TYPICAL)
I
C
(A)
Eon
,
Eoff
,
Err
(mJ/pulse)
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.22Ω
Inductive load
Eoff Eon
Err
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0120.5 1.5 2.5
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 1400A
Inductive load
Eon
Eoff
Err
R
G
-E
SW
(TYPICAL)
R
G
(Ω)
Eon
,
Eoff
,
Err
(mJ/pulse)
T
C
measured
point is just
under the chips
Single Pulse
IGBT part:
Per unit base = R
th(j–c’)
= 0.014K/W
FWDi part:
Per unit base = R
th(j–c’)
= 0.023K/W
