StrongIRFETTM IRF7480MTRPbF DirectFET(R) N-Channel Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS 40V RDS(on) typ. 0.95m max 1.20m ID (Silicon Limited) 217A S Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant Package Type IRF7480MPbF DirectFET(R) ME S S S S D DirectFET(R) ISOMETRIC ME Standard Pack Form Quantity Tape and Reel 4800 3.0 Orderable Part Number IRF7480MTRPbF 225 ID = 132A 200 2.5 175 2.0 TJ = 125C 1.5 150 125 100 75 50 1.0 25 TJ = 25C 0.5 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 G ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) Base part number S D www.irf.com (c) 2015 International Rectifier 25 50 75 100 125 150 TC , Case Temperature (C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current IDM PD @TC = 25C Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS Operating Junction and TJ Storage Temperature Range TSTG Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Max. 217 137 868 96 0.77 20 -55 to + 150 VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Surface mounted on 1 in. square Cu board (still air). 2 www.irf.com W W/C V C mJ See Fig.15,16, 23a, 23b A mJ Typ. --- 12.5 20 --- 0.75 Max. 45 --- --- 1.3 --- Units C/W Min. Typ. Max. Units Conditions 40 --- --- V VGS = 0V, ID = 250A --- 30 --- mV/C Reference to 25C, ID = 1.0mA --- 0.95 1.20 VGS = 10V, ID = 132A m --- 1.60 --- VGS = 6.0V, ID = 66A 2.1 3.0 3.9 V VDS = VGS, ID = 150A --- --- 1.0 VDS = 40V, VGS = 0V A --- --- 150 VDS = 40V, VGS = 0V, TJ = 125C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- 0.81 --- TC measured with thermocouple mounted to top (Drain) of part. Mounted to a PCB with small clip heatsink (still air) (c) 2015 International Rectifier A 81 206 Thermal Resistance Symbol Parameter Junction-to-Ambient RJA Junction-to-Ambient RJA Junction-to-Ambient RJA Junction-to-Case RJC Junction-to-PCB Mounted RJ-PCB Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance Units Submit Datasheet Feedback Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) May 14, 2015 IRF7480MTRPbF Dynamic @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 370 --- --- S VDS = 10V, ID = 132A Qg Total Gate Charge --- 123 185 ID = 132A Qgs Gate-to-Source Charge --- 31 --- VDS =20V nC Qgd Gate-to-Drain ("Miller") Charge --- 44 --- VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) --- 79 --- ID = 132A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time --- 21 --- VDD = 20V tr Rise Time --- 70 --- ID = 30A ns td(off) Turn-Off Delay Time --- 68 --- RG = 2.7 tf Fall Time --- 58 --- VGS = 10V Ciss Input Capacitance --- 6680 --- VGS = 0V Coss Output Capacitance --- 1035 --- VDS = 25V Crss Reverse Transfer Capacitance --- 700 --- pF = 1.0MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) --- 1240 --- VGS = 0V, VDS = 0V to 32V Coss eff. (TR) Effective Output Capacitance (Time Related) --- 1515 --- VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Diode Forward Voltage VSD dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Min. Typ. Max. Units Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ= 25C,IS =132A, VGS = 0V D --- --- 87 --- --- 868 --- --- 1.2 V --- 2.4 --- V/ns --- --- --- --- --- 44 46 56 63 2.1 --- --- --- --- --- A G S TJ =150C,IS =132A, VDS = 40V TJ = 25 C VR = 34V, ns TJ = 125C IF = 132A TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V. ISD 132A, di/dt 920A/s, VDD V(BR)DSS, TJ 150C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf R is measured at TJ approximately 90C. Limited by TJmax, starting TJ = 25C, L = 1mH, RG = 50, IAS = 20A, VGS =10V. 3 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF 1000 1000 100 BOTTOM 4.5V 10 BOTTOM 100 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C Tj = 150C 1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 TJ = 150C 100 TJ = 25C 10 VDS = 10V 60s PULSE WIDTH 1.0 ID = 132A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 8 -60 -40 -20 0 Fig 5. Typical Transfer Characteristics 100000 Fig 6. Normalized On-Resistance vs. Temperature 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current(A) 1 VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Ciss Coss Crss 1000 ID= 132A 12.0 VDS = 32V VDS = 20V 10.0 8.0 6.0 4.0 2.0 0.0 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com (c) 2015 International Rectifier 0 20 40 60 80 100 120 140 160 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150C 10 TJ = 25C 1 100sec 100 OPERATION IN THIS AREA LIMITED BY R (on) DS 10 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0.1 VGS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 0.1 1.0 1 10 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.9 48 Id = 1.0mA 0.8 47 0.7 46 0.6 45 Energy (J) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) DC 44 43 0.5 0.4 0.3 42 0.2 41 0.1 40 0.0 -60 -40 -20 0 -5 20 40 60 80 100 120 140 160 TJ , Temperature ( C ) 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 12. Typical Coss Stored Energy Fig 11. Drain-to-Source Breakdown Voltage RDS (on), Drain-to -Source On Resistance (m) 0 4.5 Vgs = 5.5V Vgs = 6.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF Thermal Response ( Z thJC ) C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125C and Tstart =25C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 125C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 132A 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com (c) 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF 9 3.5 3.0 IRRM (A) VGS(th), Gate threshold Voltage (V) 4.0 ID = 150A ID = 250A 2.5 ID = 1.0mA IF = 88A VR = 34V 7 TJ = 25C TJ = 125C 6 5 4 ID = 1.0A 2.0 8 3 1.5 2 -75 -50 -25 0 25 50 75 100 125 150 100 200 TJ , Temperature ( C ) 400 500 600 700 diF /dt (A/s) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 200 9 8 IF = 132A VR = 34V 7 TJ = 25C TJ = 125C QRR (nC) IRRM (A) 300 6 5 180 IF = 88A VR = 34V 160 TJ = 25C TJ = 125C 140 120 4 100 3 80 2 100 200 300 400 500 600 100 700 200 300 400 500 600 700 diF /dt (A/s) diF /dt (A/s) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 200 IF = 132A VR = 34V QRR (nC) 160 TJ = 25C TJ = 125C 120 80 40 100 200 300 400 500 600 700 diF /dt (A/s) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com (c) 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF DirectFET(R) Board Footprint, ME Outline (Medium Size Can, E-Designation) Please see DirectFET(R) application note AN-1035 for all details regarding the assembly of DirectFET(R). This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D G S S S S S D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF DirectFET(R) Outline Dimension, ME Outline (Medium Size Can, E-Designation) Please see DirectFET(R) application note AN-1035 for all details regarding the assembly of DirectFET(R). This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J J1 K L L1 M N P METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.58 0.62 1.08 1.12 0.93 0.97 1.28 1.32 0.42 0.38 0.58 0.62 0.88 0.92 2.08 2.12 3.63 3.67 0.59 0.70 0.02 0.08 0.08 0.17 IMPERIAL MIN MAX 0.246 0.250 0.189 0.199 0.152 0.156 0.014 0.018 0.023 0.024 0.043 0.044 0.037 0.038 0.050 0.052 0.015 0.017 0.023 0.024 0.035 0.036 0.082 0.083 0.143 0.144 0.023 0.028 0.0008 0.003 0.003 0.007 Dimensions are shown in millimeters (inches) DirectFET(R) Part Marking LOGO GATE MARKING PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF DirectFET(R) Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7" reel, order IRF7480MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MAX MIN MIN MAX MAX 12.992 6.9 A N.C N.C 330.0 177.77 N.C N.C 0.795 0.75 B N.C 20.2 19.06 N.C N.C N.C 0.504 0.53 C 0.50 12.8 13.5 0.520 13.2 12.8 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 3.937 2.31 100.0 58.72 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 12.4 11.9 N.C 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 N.C 0.606 15.4 12.01 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 1.50 0.063 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 IRF7480MTRPbF Qualification Information Industrial * (per JEDEC JESD47F guidelines) Qualification Level Moisture Sensitivity Level MSL1 DFET 1.5 (per JEDEC J-STD-020D) Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. * Industrial qualification standards except autoclave test conditions. Revision History Date Comments 11/07/2014 Updated EAS (L =1mH) = 206mJ on page 2 Updated note 9 "Limited by TJmax, starting TJ = 25C, L = 1mH, RG = 50, IAS = 20A, VGS =10V" on page 3 Updated RJA from "60C/W" to "45C/W" on page 2. 05/14/2015 Updated registered trademark from DirectFETTM to DirectFET(R) on page 1,9 and 10. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRF7480MTRPBF