Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
POWER AMPLIFIER FOR BluetoothTM Class 1
GaAs HBT INTEGRATED CIRCUIT
PG2301T5L
Document No. PG10559EJ01V0DS (1st edition)
Date Published April 2005 CP(K)
NEC Compound Semiconductor Devices, Ltd. 2005
DESCRIPTION
The
PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
in a 12-pin plastic TSQFN package. And this package is able to high-density surface mounting.
FEATURES
• Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
• Supply voltage : VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)
• Control voltage : Vcont = 0 to 3.6 V (2.5 V TYP.)
: Venable = 0 to 3.1 V (2.9 V TYP.)
• Circuit current : ICC = 120 mA TYP. @ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V, Venable = 2.9 V,
Pin = +4 dBm
• Maximum power : Pout (MAX.) = +23 dBm TYP. @ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V, Venable = 2.9
V,
Pin = +4 dBm
• Gain Control Range : GCR = 23 dB TYP. @ VCC1, 2 = Vbias = 3.3 V, Vcont = 0 to 2.5 V, Venable = 2.9 V,
Pin = +4 dBm
• Power gain : GP = 23 dB TYP. (Reference value)
• High efficiency : PAE = 50% TYP. (Reference value)
• Shut down function
• High-density surface mounting : 12-pin plastic TSQFN package (2.0 2.0 0.37 mm)
APPLICATIONS
• Power Amplifier for Bluetooth Class 1 etc.
ORDERING INFORMATION
12-pin plastic TSQFN
(Pb-Free) Note
Embossed tape 8 mm wide
Pin 10, 11, 12 face the perforation side of the tape
Qty 3 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
PG2301T5L-A