ee ee te ean Sect ce et me eitetes state ie Scat Selma soe : LSE D MM 6427414 0001310 b mm Atk NE C/ CALIFORNIA D0: | 5 NEC veuucounrowen lnene Eis _. . NPN MEDIUM POWER | NE416= (7-33-25 4 4 * UHF-VHF TRANSISTOR | SERIES 7 wb i Anlaw ndh ee errs Ronee mabe erstie . . ~ + - : . . . : id FEATURES - . ss DESCRIPTION AND APPLICATIONS . - - LOW NOISE FIGURE: 1 dB at 70 MHz : a The NE416 series of NPN silicon transistors Is one of the most , . versatile and widely used of NECs microwave transistors. The e HIGH RELIABILITY METALLIZATION , serles provides economical solutions toa widerange ofampli- . e LINEAR POWER OUTPUT: 200 mW at 2 GHz fier and oscillator problems. Low noise figures, high gain and e LOW COST 7 high current capability achieve wide dynamic range and ex- ; - cellent linearity. The NE416 series is available in a wide selec- ; tion of package styles and in chip form for thin and thick film - - . , circuits. Most package styles are available with Grade C (JANTXV equivalent) and Grade CX (JANTX equivalent) . . screening. The NE41615 and NE41603 have been space . . Qualified. The series is volume produced, using the latest tech- one niques and production controls patterned after MIL-S-19500. . ABSOLUTE MAXIMUM RATINGS (ta - 28 ) Of special importance is the use of NEC's high reliability met- SYMBOLS PARAMETERS UNITS} RATINGS allization system (Pt-Si-Ti-Pt-Au) which offers the utmost In Vero Collector to Base Voltage V a6 performance, reliability, and permits high temperature opera- Vous Collector to Emitter Voltagel 18 tlon (100C) at rated dissipation. The NE416 series offers su- - perior performance and reliability at prices usually lower than Veao [Emitter to Base Voltage Vv 3 less reliable moly-gold or aluminum transistors. - Ic Collector Current mA 100 , Ts Junction Temperature C 200* Tsta Storage Temperature C = |-65 to +200** *Maximum Junotion Temperature for NE41632 Is 150C, **Maximum Storage Temperature (Tste) for the NE41632 and NE41635 is -65C to 150C. The leads of the NE41635 are Sn plated and may tamish above 150C. Once soldered into a circult, the unit can be stored at 200C, 1 NE41635 TYPICAL NOISE PARAMETERS - : . VCE = 10V,IC = 5mA FREQUENCY (MHz) NF min (dB) Ga/dB OPT SOURCE RN/50 0 500 18 - 483 . 40.2 128 A7 . - 1000 , 3.0 14 - 58 2171 10 ; 1500 42 8.3 . 69 Z-174 14 a 2000 48 . 67 68 Z -162 : 26 Sore | VCE = 10V, IC = 20mA 500 . 24 17.5 "+42 2 159 43 4000 _ 36 .. W706. 59 Z 180 _. 10 oo : 1600 . 49 "98 67 2 -169 5 | 2000 5.6 : 3.8 . _ 73.2-159 . 60 . 2-101oN E C/ CALIFORNIA MH 6427414 9001311 6 male 17 15E D T-3)-2) z2l3zes-tl zlatts-tl 1-33-05 Te T zlalzs| = owe 9 Teujuue) prenS ey; ) pojpouuos eg yyeys feujwe} sonjute ayy YNdWo prend e 6 1 eBpyq joedeo eae sAojdura ago SU OE > Md %e > 210h9 Ajng wewemseew esing = y suoeoydde reubjs [rews 40) payaies | (sovzOSz) ZZESLPAN OU) Pue JaMod 10} PaDe}as S| (Z0ZOSZ) |ZEOIPIN S OSIOU MO} JO} PA}DIINS S| (1ZEON) L-ZLOLVAN ueder Jo UolTeoossy feuysnpul SJuoMIay kL SOJON gee | 02 wap ZHO $0 = "WEP 4 = Nid AQeL = SOA ez | zz wgp ZHOZ = s"WEP SL = Nid ' yu 0S = Of ASL = SOA Te ndino Jewog Inod ab oy 6 ap ZHOe = | Wap OF = Nid - | vWi OF = OF ASL = SONATE urea semog do st gp 2HO SO =3 Fez gp ZHOZ0 =} WUOS = O1'AOL = SOA tL ZL oL ol oh el ap ZHOL=4 tz i ou so og 0g ap 7HD SO = WUlOS = O1'AOL = SOA F piled eiqereay wnwxeyy Sv ot b t \ ap (t-2i9}PSN) ZHIN OZ =} Boog = OY WWE = O'AG= SOA se re g s se gp ZHOL = sb sk 8% st gt ap 2HO 90 = ev | ve PL e | e2 zt zt ap 2H9Z0 =1 DOs = Ov VUIS = O1AOL = OA 2 eunB}4 asion wunuqUlYY NIWIN 6b ap ZHOSO =) we | ob ap ZH 270 =] WUOS = Of AOL = SOA Soi 8 8 8 gel z se] Zz gp WOL=s SL St l el a ot ap ZHOS'O =1 WUIOS = O1'ACL = BOA Fuso, uojesui | 21/51zs] se] z Se] z se] z se] z se | 2 se] 2 ZHO VWWOS = OI AOL = SOA ze | st ZHO VWUGZ = O1'AS = 3A : ye tonpolg ypimpueg UTED u XV | GAL] NIW [XVIN | DAL [NIA | XVI AL] NIA | XW AL | NU XW AL | NT XW [GAL NN vi [dA | NI) SLINA SNOILIGNOO ONY SUSISWVvuvd SIOSWAS cous) se (z6-oD ze oz {econ st (2-01) 2 40 0 SNIILLNO ADWNOVd (ape) ,eorzasz | (apm) zestasz (a. pip) 1Z80N vs (api) elorzosz | (pr) ssziosz | Gop) szrtose | (a pt) szozosz pro) svetasz UaSWNN GaYyaLSIDSY ,fvis @CESLPAN zh-CLOLbAaN St9LPAN L-2E9LPAN OZ9LPVAN SLOLPAN ZLOLPAN ZOSL?IN COoLPAN YASWNN LUVd JN 082 = WW) SOLLSIHSLOVHVHO IVOINLOA TA 6c oo" se st os 8g 8g M (0,2 = V0 Uopedissiq samo [eI id os Ott OS os Os Os. og WO, {eseQ-0}-uoounP) soURls|say fEULISL |, HLY 2 b z 1 z 1 z t z b gh L ad ZHI L = 1O = 31 AOL = GOA ha 2 |] eb dd ZHW LE = 3'O=31'AS = 990A ie geoueyoedeo aseg 04 1009/09 goo 00g | ool] cE | oo | DOL} ce | ooz | oor | ce | ooze | oot} oc 00g | OOf | Of | 002 | COL; cE WWOS = O1AOL = GOA ooz | 001 | o wugz = O1'AS =A % ,Ulep wang prenvuos Say to <0 to +o to iy) bo wit 0 = O1AZ = BSA Fe Ujed ywaund Jaywy oda x) <0 ro re) ro FO ro ya O = SI A0Z = BOA Te waUND Pond sopa}OD 8d! XVIN | GAL/ NIA [XVI | GAL | NI | XWIN| GAL NU XW] GAL] NI | XW AL] NIN XV AL] NIW (XY [dAL/ NIN SLIND SNOLLIGNOO ONY SYSLSNVHVd STOSWAS O-ouomn) se (sob zs 0z (ce-ob st @-ob ze 40 0 ZNIMLNO aDwIOVd (apap) .eapzasz | (apm) zesiosz {a pup) Z69N {a pro) ezorzosz | pip) ssziosz | Gopm)szviasz | (apr) szozosz pap) eve19sz YSEWNN GavuaLSIOsY ,Pvia @-CeESLPAN zi-2LOLbaNn SES1PAN E-2eoLpaNn OCOLP3N SI9LPIN SLOLPIN 2091LPSN OstvaNn YAWN LYVd JN NE416 SERIES Ose = \Y SNOLLVOIIDSdS AONVINNHOSYSd 2-102 a oye eresNE C/ CALIFORNIA 45 D MM 6427414 CO01312C T T 3)- 17 OUTLINE DIMENSIONS (units in mm) NE41600 (CHIP) (Chip Thickness: 140 pm) 0.4+0,01 0.35 0.255 0.126 C4 0.420,01 0.114 [ ] OUTLINE 07 E | 5.0 MIN (ALL LEADS} 452 B TEP MAK) 9.4440.05 4 Ls 340.3 5.6 MAK a 13.0 IsoM3 4 20 ae NE416 SERIES | T-31-2] . T3305 OUTLINE 03 f E * . sb 2.040.2 5.0 MIN 1.0201 | oe FZ fa eerie a! entrant OE : 03 soe 28 oat 01 93 t - 1, 18#0.3 OUTLINE 12 OUTLINE 15 (10-72) 6.84) MAX 4.05 MAX | pal OUTLINE 32 OUTLINE 35 (TO-92) (MICRO-X) 5.2) MAX , 5.6 MAX r . Bec) 42MAX : 2580.2 ; 0.1 9.06 F21 EB 0.03 + i 1 temax : . 0.55 t 326 ts available with t center lead the base. - r 2-103 Septet eaeNE C/ CALIFORNIA 15E D MM 6427414 0001313 1 m7 3l- 77 NE416 SERIES - T23)-2) TYPICAL DEVICE CHARACTERISTICS (1 = 250) os LT BSOS NE41603, NE41607 , , NE41615, NE41620 DC POWER DERATING CURVES . DC POWER DERATING CURVES 1.2 4 , th inti a NE41615 Cee ea . / With Infinite Heat Sink = , = Vv RTH YW-c) = 50C/W E I T E With rT 7 Mounting on - 3) 1.6mm\7 fC 5 og | Al203 Board 5 Thick Al 12201 $\_S/ 3 ST (30x30x0.5mm) \ & 50 om? and {4 prt A ATH WA) = = Heat Sink 17 MAX: 3 | 140C g ATH (A) = ~ 2 A) 67 MAX 4 \ a 165C, We 5 . 5 04 \ 2 | Heat Sink NE41620 + ao a Rr = 165 Free Air 1 CW SS. 1 3 ne # Ny r Free Air ae e free Air MN <> RTH W-A) = 300C/W H WA) = 0 ee ie eae jLzigccw | 0 60 100 150. 200 0 60 100 150 200 Ambient Temperature, Ta (C) Ambient Temperature, Ta (C) NE41635 NE41612, NE41632 DC POWER DERATING CURVES . DC POWER DERATING CURVES 08 ; 1.0 TT 1.4 " With Infinite Heat Sink Aluminum = RTH W-C) = 110C/W = Heat Sink & os | & 0.8 for 1632 c . - = 2 . Mounted on Al2z03 8 NE41632 NE4161 & Substrate g 08 with Infinite Boog | (20x50x.63mm) 2 Heat Sink GO | Araw-a = 170C/W \ a NE416: RTH (J-c) = 5 5S 04 Free Air go 2 = 8 02 ne a g 5 |. Free Air ee NE41612 RTH W-A) = 570C/W Free Air 0 {| ft J 0 rs) 100 160 200 . 9% 50 400 150 200 Ambient Temperature, Ta (C) . Ambient Temperature, Ta (C) TYPICAL PERFORMANCE CHARACTERISTICS ca = 25C) COLLECTOR CAPACITANCE : oc CURRENT GAIN vs. COLLECTOR TO BASE VOLTAGE vs. COLLECTOR CURRENT 8 500 c Grounded Vce = 10V : atf = 1 MHz 300 6 , 00 g E Z 2 5 100 = 70 j 5 6 e { gS x0 = . 3 07 20 3 0.6 10 o o68 1 23 67 10 20 30 ; _ oF 08 4 38 10 30 100 600 Collector to Base Voltage, Vee (V) v Collector Currant, Ic (mA) * 2-104 a betta a eye bite a eee ane mie adopt regen ese eneae Peete atte 2 Sh Sw ace? 2 bse tees ae a ae ict ee Ee les. ee NE C/ CALIFORNIA 15E D2 MM 6427424 9001324 3 mm Te SI-/7 i Hl NE416 SERIES H TYPICAL PERFORMANCE CHARACTERISTICS cr 28 TP 7-3) 21 _~ | A = 25 woe Et } 7-33 05 NE41612, NE41615 AND NE41632-2 . NE41603 AND NE41607 to FORWARD INSERTION GAIN - : FORWARD INSERTION GAIN : AND MAXIMUM AVAILABLE GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY vs. FREQUENCY 24 Vce = 10V Vee = 10V fo = 30mA Ic = 30mA 16 e. g c & & 8 . 4 - i 0 - 0 01 02 03 0607 1 23 & - - Of 02 09 O08 07 1 23 5 Frequency, f (GHz) . . . Frequency, f (GHz) NE41612-1 NOISE FIGURE vs. NE41603, NE41607 AND NE41632-2 - ~ COLLECTOR CURRENT AND NOISE FIGURE vs. FREQUENCY - SOURCE RESISTANCE 4 = 35 a Vez = 10V yor = oy 3 Io = 5mA - = ) 200 0 i _ 30 e | g A | nal 2 g } S 26 - A 160 2 5 D oS 3 it 5 YY ce 2 i 20 f. 8 2, } 3 ee | a. g ; Vi 8 \ 3 . 15 A a & aT. 1 1.0 400 200. 300 . 600 700 1000 0 5 10 15 20 28 Frequency, f (MHz) - Collector Current, Ic (mA) NE41615 + NEQI61S- SECOND ORDER IM DISTORTION 0 - THIRD ORDER IM DISTORTION vs. COLLECTOR CURRENT . vs. COLLECTOR CURRENT Fy a . Z = 10V, = = 2 5 a a a a = = : z Z fife = 1 z 2fi-t2 = 2x190-200 MHz 7 Vo = 100 BQ we . m * Vo = 100 dBUV/75 0 [ 20 30 40 50 60 70 20 30 40 60 60 70 7 Collector Current, te (mA) Collector Current, Ic (mA) an 2-105 SO sNE C/ CALIFORNIA NE416 SERIES re LSE D MM 6427414 0001315 5 ma T-SI-177 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 150 . NE41603 Coordinates in Ohms Frequency In GHz (Vce = 10V, Ic = 20 mA) "MAGN AND ANGLES: VCE=10V,IC =5mA fe cee enenenne nee ning we e FREQUENCY (MHz) Si Sat Si2 S22 100 82 -73 12.33 139 .03 87 84 -24 500 79 ~160 4.01 87 07 24 47 -36 1000 vi 178 2.08 63 06 24 44 -49 1500 79 166 1.40 45 07 49 -65 2000 80 155 1.03 31 08 40 52 -81 2500 84 143 80 16 -10 42 53 -100 VCE = 10V, IG = 10mA 100 75 -$9 18.56 129 02 50 -32 500 ST -171 4.95 84 .04 32 35 38 1000 77 172 251 63 05 39 -51 1800 78 162 1.69 46 07 42 -67 2000 719 152 1.25 32 09 49 43 -81 2500 81 142 97 19 10 48 43 -101 VCE = 10V,I = 20mA 100 J2 -125 23.98 119 01 46 57 -44 500 78 -177 5.62 82 .03 44 24 -42 1000 : 8 169 2.83 63 * 05 52 23 ~54 1500 79 160 1.90 47 07 2 28 -69 2000 80 162 1.40 34 09 55 34 -83 . 2500 82 142 4.10 21 14 53 36 ~101 VCE = 10V,Ic = 30mA 100 72 -137 26.27 116 01 47 51 -45 500 28 -180 5.87 81 03 52 20 -44 1000 78 169 2.95 62 05 55 20 -55 1800 7 19 160 1.97 48 07 55 25 -70 2000 81 152 1.46 35 09 58 31 -84 2500 82 140 1.14 20 WM 55 33 -101 | VCE = 10V, IC = 50mA 100 : 2 -150 27.80 110 01 49 44 -47 500 79 178 5.96 80 02 60 18 -42 1000 wg 168 2.98 62 05 . 61 19 -54 1500 80 159 1.99 47 07 ~ 9 .24 -68 2000 81 151 1.47 35 .09 61 30 - -83 2500 83 144 1.14 . -103 2-106 . ETON aL Shememerprementnmry ag ree greys reream Pte | ee mr mareNE C/ CALIFORNIA TYPICAL COMMON EMITTER SCATTERING PARAMETERS [50 S-MAGN AND ANGLES: VCE = 10V,IC = 5mA LSE) * 180 NE41607 Coordinates In Ohms Frequency In GHz _ (ce = 10V, Ic = 20 mA) b4Y2744 OOOLSLL 7 mw 7-3 I-/7 NE416 SERIES i ee ee T-B3-0S +60 FREQUENCY (MHz) Sit Sat Si2 S22 400 86 ~68 12.47 - 139 03 69 84. ~25 500 76 -154 4.15 87 07 24 44 -4t 1000 76 -175 2.16 62 .08 20 42 -57 1500 76 176 1.46 43 .09 20 AT -73 2000 aT 167 1.08 27 .09 22 Bi -94 2500 78 157 83 14 10 22 55 -106 VCE = 10V,IC = 10mA 100 79 -92 18.90 129 02 51 71 -35 500 76 -165 5.11 84 - 05 31 .30 -46 4000 76 179 2.60 62 .06 34 130 -59 1600 76 171 1.76 44 08 32 35 -75 2000 7 164 1.30 29 .09 34 40 -94 2500 78 455 1.01 14 -10 30 A6 -106 VCE = 10V, Ic = 20mA 100 75 -117 24.58 119 01 45 ST -45 500 76 = -172 5.80 81 03 40 20 54 1000 77 176 2.92 62 06 44 21 -63 1500 aw 169 1.97 46 08 42 27 -77 2000 78 162 1.45 31 09 43 (92 -04 . 2500 79 151 1.13 16 10 - 36 39 -107 VCE =10V,IC = 30mA 100 73 = -130 26.90 114 01 47 50 -49 600 76 = -178 6.05 80 03 45 17 -53 4000 a7 175 3.02 62 05 48 .18 -64 1500 78 168 2.03 46 07 44 25 ~78 2000 79 162 1.50 32 09 45 30 ~95 2600 79 180 1.16 7 10 40 37 ~109 VCE = 10V, Ic = 50mA 100 73 = -142 27.99 110 01 43 43 -50 500 78 -178 6.03 79 . 02 53 .16 -49 1000 78 173 3.00 61 05 51 18 ~62 1500 79 167 2.01 46 07 49 . 124 -77 2000 81 160 1.49 32 08 50 i) -94 2500 81 181 1.16 19 10 45 36 -110 2-107 Set appre carne at mete Sete pit ert enaeyes etna: mame toeaiauds te ates ar cee eh aepance ne mae oe NE C/ CALIFORNIA LSE D MM 6427424 0001317 9 me J StI . 16 SERIES my NE416 S T3l-2) -- TYPICAL COMMON EMITTER SCATTERING PARAMETERS -ss *. . 17 33 DS - Sat . 0.1 GHz +#90 NE41612 Coordinates in Ohms __. Frequency in GHz - - (VcE = 10 V, Ic = 20 mA) S-MAGN AND ANGLES: VcE=5V,IC =2mA FREQUENCY (MHz) Su Sat Si S22 100 83 ~52 6.06 141 05 58 89 -20 200 69 ~87 4.45 118 09 49 76 -3 600 52 -143 2.25 81 12 39 59 ~46 1000 49 172 1.31 49 15 54 55 -69 1500 44 139 97 238 25 59 59 -92 2000 35 108 82 12 36 48 60 115 VCE = 10V,IC = 5mA 100 68 ~60 10,41 132 .03 62 80 -22 200 51 -95 . 6.94 110 08 54 65 -30 500 37 -148 3.24 79 10 57 53 -40 1000 34 170 1.79 52 17 61 51 ~59 1600 30 145 1.32 30 25 58 55 ~82 2000 22 122 1.05 9 32 46 69 -104 VCE = 10 V, IC = 10mA 100 52 ~73 13.86 122 02 62 69 -25 200 38 -105 8.38 102 D5 59 56 -31 500 29 155 3.71 77 11 63 46 -39 1000 ar 169 2.02 51 * 19 61 45 -57 1600 24 149 1.48 30 26 53 50 -80 2000 17 135 1.18 9 32 41 56 -100 VCE = 10V, Ic = 20mA 100 39 -83 16.25 114 02 62 -27 200 29 -114 9.23 98 04 49 -30 25 -169 3.97 75 11 67 42 -33 1000 24 168 2.15 51 20 60 A1 -56 1500 .20 152 1.57 30 .28 51 46 -78 2000 14 145 1.24 9 : 33 <y 53 -98 VCE = 10V,IC = 30mA 100 . 34 -89 16.82 111 02 65 56 -27 200 26 -119 937 .04 66 47 -28 500 24 -162 4.00 74 11 - 68 41 -37 1000 23 167 2.16 51 20 61 41 -56 1800 20 152 1.57 30 .28 51 -78 2000 .14 145 1.24 8 33 36 52 -98 2-108. 4 ees . ne tang ere emery seen AR een iem 7-3)-19 - NE416 SERIES TSI 2) NE C/ CALIFORNIA LSE D Mm b4274L4 O0OL3L8 0 _ TYPICAL COMMON EMITTER SCATTERING PARAMETERS ~ . T3305 +60 -160 NE41615 Coordinates In Ohms Frequency in GHz (VcE = 10 V, Ic = 20 mA) S-MAGN AND ANGLES: VCE = 10V,IC = 5mA FREQUENCY (MHz) Si S21 S12 S22 100 59 ~74 9.98 126 03 58 78 -22 200 . 46 -112 6.28 103 05 52 66 ~30 - 500 39 ~160 2.91 72 09 57 59 -46 1000 37 164 1.71 39 17 57 62 -78 1500 36 133 1.30 10 27 46 62 -109 2000 31 91 1.07 -16 38 31 59 -136 VCE = 10V,IC = 10mA 100 42 -89 13.14 116 02 60 68 -25 200 33 -124 TOT 97 04 61 57 -29 500 31 ~165 3.33 70 10 65 53 -46 1000 31 164 1.93 39 19 55 56 -78 1500 31 135 1.47 10 28 41 36 ~107 2000 26 96 1.20 -16 38 27 54 -133 VCE = 10V,I = 20mA 100 2g -104 15.31 110 02 63 69 -26 -200 25 -135 8.44 93 04 68 51 -18 500 27 -167 3.64 69 11 67 48 -46 1000 28 165 2.09 39 20 53 5 -78 1500 2 138 1.57 11 29 39 52 -106 2000 22 . 98 1.29 -16 38 23 50 -131 VCE = 10V, ic = 30mA 100 24 112 16.22 107 .01 69 56 ~25 200 22 -140 8.77 92 .04 73 49 -28 500 25 168 3.76 69 a8 67 46 -46 1000 26 167 2.14 39 21 3 49 -78 1600 26 139 1.61 11 30 38 50 -106 2000 21 100 1.32 -15 38 22 48 ~130 VCE = 10V,IC = 50mA 100 19 -126 16.89 104 01 72 53 -25 200 20 -148 8,99 90 .04 73 47 -27 500 . 24 -170 3.83 68 14 68 45 ~48 1000 26 166 2.18 39 21 52 48 -78 1500 26 139 1.63 11 30 37 48 -106 20 99 1.34 -16 38 21 47 ~~ -129 2-109~~ x = Sioa fo Set EH a 2 mu = ee. Ss os NE C/. CALIFORNIA USED WH 6427424 0001319 2 mm 7-317 NE416SERIES a _ FZl-2) TYPICAL COMMON EMITTER SCATTERING PARAMETERS. 3 77 3.3-Q5 +90 NE41620 Coordinates in Ohms Frequency In GHz (VcE = 10 V, Ic = 20 mA) S-MAGN AND ANGLES: VCE =10V,IC = 10mA FREQUENCY (MHz) Si Sai ~ Sia Szz 100 71 = -104 17.66 125 03 51 69 -36 200 72 -142 10.59 103 03 33 49 ~41 600 75-177 4.49 74 04 32 37 -52 1000 75 159 2.29 45 05 40 38 -79 1500 18 143 1.50 21 08 36 44 -106 2000 8 130 1.10 -1 12 35 53 7132 VCE = 10V, IC = 20mA 100 66 -130 22.48 116 02 42 56 -43 200 72 ~158 12.57 97 02 30 38 ~45 -00 75 176 5.11 72 04 47 .28 -3 1000 15 156 2.60 45 06 49 31 -81 1500 TT 142 1.70 22 09 42 37 ~108 2000 .78 129 1.27 o 12 38 46 ~132 VCE = 10V, IC = 30mA 100 . 67 ~-143 24,33 112 02 58 49 -46 200 71 ~165 13.33 95 02 49 33 -48 500 5 174 5.36 71 _ 04 63 26 -55 1000 75 155 272 45 08 62 27 -81 1500 7 144 1.78 22 08 44 340-108 2000 78 129 1.31 2 12 39 43 -132 VCE = 10 V, IC = 50mA 100 67 ~153 25.61 108 64 43 -47 200 72 -171 13.75 92 47 29 -46 500 76 172 5.46 70 03 54 23 ~52 1000 76 154 2.76 45 56 26 -80 1500 73 141 1.80 22 09 47 33 02-108 79 128 1.34 1 12 40 42 7131 . 2-110i ed be eeuiccak ss NE C/ CALIFORNIA TYPICAL COMMON EMITTER SCATTERING PARAMETERS. S-MAGN AND ANGLES: LSE D mM b427 NE41632E Coordinates in Ohms Frequency in GHz . (Vce =.10 V, ic = 20 mA) TH BPR) T3305 Way poo.a20 +. a T 3/-17 - NE416 SERIES +60 +30 VcE=10V,IC =5mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 VCE = 10V,IC = 10mA 100 200 500 1000 1500 2000 VCE = 10V,IC = 20mA 100 . 200 500 1000 1500 2000 VCE = 10V, IC = 30mA 1500 2000 VCE = 10V, IC = 50mA 100 200 500 1000 1500 2000 S22 Si S2i 72 -73 11.39 132 04 59 8 -28 58 -117 7.45 109 06 43 58 -38 54 -167 3.51 79 09 48 -40 ~48 57 156 1.90 49 .14 55 37 ~65 62 130 1.37 27 , 21 56 . 38 -89 70 108 11- 8 30 47 36 -117 59 -97 15.52 121 03 67 64 -35 .50 -139 9,01 101 04 49 44 -41 50 -178 4.00 76 09 59 32 -48 54 151 2.14 49 .16 58 30 -64 60 127 1.54 28 23 54 .28 -89 66 107 1.25 8 st 45 30 -118 49 -125 18.93 111 .02 60 .60 -40 46 ~159 10.20 95 03 58 34 -41 48 173 4.35 74 09 67 .25 ~-47 52 147 2.31 49 17 60 24 -63 58 126 1.66 28 24 54 23 -89 65 107 1,35 9 32 43 24 -118 46 -139 20.01 107 01 66 AB -40 46 ~166 10.52 93 .02 63 30 -40 48 171 4.45 73 09 . 70 23 -46 51 146 2.34 49 17 62 23 -63 56 126 1.67 29 | .25 55 .22 -91 64 107 1.36 10 33 44 24 -118 45 -152 20.48 104 01 68 40 -38 46 -173 10,53 90 03 69 .28 -36 48 169 4.44 72 09 72 23 ~43 52 145 2.33 48 17 63 23 -61 57 125 1.66 28 25 56 .22 ~88 65 107 1.34 9 33 45 .24 -116 ' 2-111 . * SaaS emanate art mp in pane reeks catereean seamen mamma IER i I { a nce en re LOTR er enennr memearmggeniins teen my nprn atya NE C/ CALIFORNIA LSE D BM G4274L4 0001322 0 mm T= 3I-17) NE4i6SERIES ~~ 7 7): EP T - - T-3 I- 2} a TYPICAL COMMON BASE SCATTERING PARAMETERS... 1 33-05" - = on %. Eset NE41632B Coordinates In Ohms Frequency In GHz (Ves = 10 V, Ic = 20 mA) S-MAGN AND ANGLES: vceB = 10V,Ic = 5mA FREQUENCY (MHz) Sit - Sai S12 S22 100 55 81 9.59 128 04 59 74 ~28 200 . 47 ~122 6.03 106 06 52 55 =33 500 45 -160 2.83 80 - 12 68 38 -29 1000 45 176 1.64 55 22 75 30 ~31 1800 . 48 160 1.29 40 35 73 20 -40 2000 51 146 1.17 27 49 65 13 . 57 VCB = 10V,IC = 10mA 100 A -109 12.53 118 03 66 61 -32 200 38 -144' 7.12 100 05 64 44 ~32 500 40 -168 9.18 77 13 75 31 ~23 1000 : 41 172 1.81 5 24 74 .26 -20 - 1600 44 160 1.42 39 36 69 .20 -23 2000 48 148 1.27 26 49 62 14 33 VceB = 10V, Ic = 20mA 100 33 ~136 14.61 111 02 72 51 ~34 200 34 ~160 7.85 05 74 36 -30 500 36 ~173 3.41 76 _ 13 78 27 -17 1000 38 177 1.93 26 73 24 ~11 1500 42 161 1.50 40 37 67 20 -tt 2000 46 150 1.34 26 48 60 15 -18 VCB = 10V,IC = 30mA 100 31 -151 15.38 108 02 78 46 -34 200 33 -168 8.10 94 05 78 33 -29 500 35 -176 3.50 75 14 79 25 -14 1000 37 170 1.98 55 26 73 24 -7 1500 AT 161 1.53 40 37 66 20 -6 2000 46 151 1.37 25 48 60 16 ~14 VcB = 10V, IC = 50mA 100 32 ~163 15.78 105 02 79 43 -33 200 34 -175 8.21 92 .05 80 32 ~-27 500 35 -178 3.62 75 14 80 25 -11 1000 37 169 1.99 54 .26 73 24 -4 1600 A 161 1.54 39 37 66 | 4 2000 46 150 1.37 25 48 16 ~13 7 2-112 meget aero (epi nres egmmenent btatedy Ame pune eee . a 227 aint engages pyar tment epics enait nc econ . i pi ei Ss eae Soiness onan 2 aman wey. NE C/ CALIFORNIA 15E D MM GY27414 OOOL3ee 2 m T- 3 I- i] _ NE416 SERIES TB 2h PK SP-OS = TYPICAL COMMON EMITTER SCATTERING PARAMETERS = we ool es ame NE41635 Coordinates In Ohms . Frequency in GHz (Vce = 10 V, Ic = 20 mA) S-MAGN AND ANGLES: VCE = 10V,IC = 5mA FREQUENCY (MHz) Su Sat S12 Soe 100 46 -72 1156 140 03 59 85 -23 600 76 ~161 3.86 83 27 48 -38 1000 45 176 2.00 62 07 33 45 ~54 1500 -T6 162 1.36 44 .08 44 -72 2000 a7 151 1.01 31 * -10 54 52 ~-87 2500 79 138 80 17 15 56 51 -110 VCE = 10V, Ic = 10mA 100 70 -102 17.26 129 02 73 ~32 500 46 -171 4.68 85 04 36 -41 1000 J6 171 2.39 63 06 45 35 ~56 1500 w6 161 1.61 A7 08 39 -73 2000 - 78 161 1.21 33 11 43 -89 2500 78 137 96 18 .23 42 -110 VCE = 10V, IC = 20mA 100 . * 65 125 21.75 120 01 51 62 -37 500 3 -178 5.24 82 . 03 52 .28 -42 1000 73 167 2.65 61 06 60 26 -57 1600 &5 157 1,80 45 60 ~74 2000 76 147 1.35 33 12 62 35 -88 2500 a7 135 1.07 18 16 58 37 -110 VCE = 10V, IC = 30mA 100 65 -137 23.60 17 01 53 55 -41 500 13 179 56.45 81 04 57 24 -42 1000 73 166 2.75 61 07 63 24 ~-57 1500 w4 156 1.86 45 10 62 .28 -74 2000 76 147 1.39 3 13 62 32 -88 1.10 19 7 58 34 -110 2600 78 136 2-113, ww roe >