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APPLICATIONS
■High Power Inverters And Choppers
■UPS
■Railway Traction
■Induction Heating
■AC Motor Drives
■Cycloconverters
FEATURES
■Double Side Cooling
■High Surge Capability
■High Voltage
VOLTAGE RATINGS
KEY PARAMETERS
VDRM 2000V
IT(RMS) 400A
ITSM 4000A
dV/dt 200V/µs
dI/dt 500A/µs
tq50µs
Conditions
VRSM = VRRM + 100V
IDRM = IRRM = 25mA
at VRRM or VDRM & Tvj
Repetitive
Peak
Voltages
VDRM VRRM
Type Number
2000
1800
1600
1400
Lower voltage grades available.
TF440 20C
TF440 18C
TF440 16C
TF440 14C
Outline type code: MU86.
See Package Details for further information.
CURRENT RATINGS
Parameter Conditions Max. Units
Mean on-state current
RMS value
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
255
400
A
A
Symbol
IT(AV)
IT(RMS)
TF440..C
Fast Switching Thyristor
Replaces March 1998 version, DS4272- 2.3 DS4272-3.0 January 2000
TF440..C
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SURGE RATINGS
Parameter Conditions Max. Units
I2t for fusing
10ms half sine; VR = 0% VRRM, Tj = 125˚C 4.0 kA
A2s
Surge (non-repetitive) on-state current
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Symbol
ITSM
I2t80.0 x 103
THERMAL AND MECHANICAL DATA
dc
Conditions Min. Max. Units
oC/W- 0.133Anode dc
Clamping force 5.0kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
0.02
Double side -
125 oC
Tvj Virtual junction temperature
Tstg Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
Rth(j-c) Single side cooled
Symbol Parameter
Clamping force 4.75 5.25 kN
-40 150 oC
-
On-state (conducting) - 125 oC
- 0.04 oC/W
oC/W
Cathode dc - 0.154 oC/W
Double side cooled - 0.07 oC/W
MEASUREMENT OF RECOVERED CHARGE - QRA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
TF440..C
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DYNAMIC CHARACTERISTICS
VTM
ParameterSymbol Conditions
Maximum on-state voltage At 450A peak, Tcase = 25oC
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% VDRM Tj = 125oC, Gate open circuit
Min. Max. Units
- 2.0 V
-25mA
- 200 V/µs
Repetitive 50Hz - 500 A/µs
Non-repetitive - 800 A/µs
Rate of rise of on-state current
dI/dt
VT(TO) Threshold voltage At Tvj = 125oC
rTOn-state slope resistance At Tvj = 125oC
1.25-V
- 1.66 mΩ
Delay time
tgd -3*µs
Total turn-on timet(ON)TOT - 1.5* µs
Tj = 25˚C, IT = 100A,
VD = 50V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
*Typical value.
IHHolding current Tj = 25oC, ITM = 1A, VD = 12V - 70 mA
Tj = 125˚C, IT = 200A, VR = 50V,
dV/dt = 200V/µs (Linear to 60% VDRM),
dIR/dt = 30A/µs, Gate open circuit
Turn-off timetq
50- µs
tq code: C
GATE TRIGGER CHARACTERISTICS AND RATINGS
VDRM = 12V, Tcase = 25oC, RL = 6Ω
ConditionsParameterSymbol
VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 6Ω
IGT Gate trigger current
VGD Gate non-trigger voltage At VDRM Tcase = 125oC, RL = 1kΩ
- 3.0 V
- 200 mA
- 0.2 V
Typ. Max. Units
VRGM Peak reverse gate voltage
IFGM Peak forward gate current Anode positive with respect to cathode
PGM Peak gate power
PG(AV) Mean gate power
- 5.0 V
-4A
-16W
-3W
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CURVES
TF440..C
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TF440..C
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NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
TF440..C
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NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
TF440..C
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NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
TF440..C
9/13
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
TF440..C
10/13
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
TF440..C
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NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
TF440..C
12/13
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
15.0
14.0
6.3
Cathode tab
Gate
Ø1.5
Ø19nom
2 holes 3.6 x 2.0 deep
(in both electrodes)
Cathode
Anode
Ø19nom
Ø 42 max
Ø 38 max
Nominal weight: 50g
Clamping force: 3.5kN ±10%
Lead length: 250mm
Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title Application Note
Number
Calculating the junction temperature or power semiconductors AN4506
Gate triggering and the use of gate characteristics AN4840
Recommendations for clamping power semiconductors AN4839
The effect of temperature on thyristor performance AN4870
Thyristor and diode measurement with a multi-meter AN4853
Turn-on performance of thyristors in parallel AN4999
Use of VTO, rT on-state characteristic AN5001
TF440..C
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CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4272-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
