NTMFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications * CPU Power Delivery * DC-DC Converters http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 9.1 mW @ 10 V 30 V 38 A 13.8 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol Value Unit VDSS 30 V VGS 20 V ID 13.0 A Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 2.46 W Continuous Drain Current RqJA 10 s (Note 1) TA = 25C ID 19.1 A Power Dissipation RqJA 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 80C TA = 80C Steady State PD 5.32 W TA = 25C ID 7.2 A TA = 25C Continuous Drain Current RqJC (Note 1) TC = 25C N-CHANNEL MOSFET MARKING DIAGRAM Power Dissipation RqJC (Note 1) TC = 25C 5.4 PD ID TC =80C 1 0.75 W 38 A 29 PD 21.6 W A IDM 106 IDmax 70 A TJ, TSTG -55 to +150 C IS 19 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VGS = 10 V, IL = 21 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 22 mJ TL 260 TA = 25C, tp = 10 ms TA = 25C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25C, VGS = 10 V, IL = 15 Apk, EAS = 11 mJ. (c) Semiconductor Components Industries, LLC, 2013 November, 2013 - Rev. 2 S (1,2,3) D TA = 80C Current Limited by Package G (4) 14.3 TA = 25C Power Dissipation RqJA (Note 2) Pulsed Drain Current 9.7 D (5-8) 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C13N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping NTMFS4C13NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NTMFS4C13NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C13N/D NTMFS4C13N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 5.8 Junction-to-Ambient - Steady State (Note 4) RqJA 50.8 Junction-to-Ambient - Steady State (Note 5) RqJA 166.6 Junction-to-Ambient - (t 10 s) (Note 4) RqJA 23.5 Unit C/W 4. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 5. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 6.1 A, Tcase = 25C, ttransient = 100 ns 34 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V V 14.9 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 4.8 mV/C VGS = 10 V ID = 30 A 7.3 9.1 VGS = 4.5 V ID = 12 A 11.4 13.8 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25C 40 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 770 VGS = 0 V, f = 1 MHz, VDS = 15 V 443 pF 127 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 7.8 Threshold Gate Charge QG(TH) 1.4 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 3.7 Gate Plateau Voltage VGP 3.6 V 15.2 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.165 2.9 nC SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 9.0 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 35 13 5.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4C13N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 6.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 16 3.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.82 TJ = 125C 0.69 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 23.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 12.1 11.3 9.7 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns nC NTMFS4C13N TYPICAL CHARACTERISTICS 10 V 70 6.5 V TJ = 25C 60 4.2 V 50 4.0 V 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 2.8 V 1 3 2 ID = 30 A 0.011 0.010 0.009 0.008 0.007 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 4.5 5.0 0.022 0.020 TJ = 25C 0.018 0.016 VGS = 4.5 V 0.014 0.012 0.010 VGS = 10 V 0.008 0.006 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0 TJ = -55C Figure 2. Transfer Characteristics 0.012 1.5 TJ = 25C Figure 1. On-Region Characteristics 0.013 1.6 TJ = 125C 20 VGS, GATE-TO-SOURCE VOLTAGE (V) 0.014 3.0 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.015 0.006 40 0 5 4 50 10 3.0 V 0 VDS = 5 V 60 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.5 V ID, DRAIN CURRENT (A) 70 1.4 1.3 1.2 1.1 1.0 TJ = 150C 1000 TJ = 125C 100 TJ = 85C 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4C13N 1000 900 C, CAPACITANCE (pF) VGS = 0 V TJ = 25C Ciss 800 VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 700 600 Coss 500 400 300 200 Crss 100 0 0 5 10 15 20 25 30 5 Qgd Qgs 4 TJ = 25C VDD = 15 V VGS = 10 V ID = 30 A 3 2 1 0 0 4 2 6 8 10 12 14 16 30 IS, SOURCE CURRENT (A) VGS = 0 V tf td(off) tr 10 td(on) 1 10 25 20 15 TJ = 25C TJ = 125C 10 5 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 1 0 V < VGS < 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 6 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 100 ID, DRAIN CURRENT (A) 7 Figure 7. Capacitance Variation 100 0.01 9 8 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 0.1 QT 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 1 11 100 12 ID = 15 A 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4C13N TYPICAL CHARACTERISTICS 100 R(t) (C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 50 45 ID, DRAIN CURRENT (A) 40 GFS (S) 35 30 25 20 15 10 TA = 85C 10 TA = 25C 5 0 0 10 20 30 40 50 60 1 1.E-08 70 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 NTMFS4C13N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE H 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 1 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ SOLDERING FOOTPRINT* STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 3X 4X 1.270 0.750 4X 1.000 e/2 L DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 0.965 4 1.330 K 2X 0.905 2X PIN 5 (EXPOSED PAD) G 0.495 E2 L1 4.530 3.200 M 0.475 2X D2 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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