To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 -0.5 1.5MAX. 8.6 0.3 9.8 0.5 1.3 +0.3 0 -0 (1.5) FS70VSJ-2 1 B 5 0.5 q w e wr 4V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .............................................................. 17m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ........... 115ns 2.6 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 100 V VGSS ID Gate-source voltage Drain current VDS = 0V 20 70 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 280 70 A A IS ISM Source current Source current (Pulsed) 70 280 A A PD Tch Maximum power dissipation Channel temperature 125 -55 ~ +150 W C -55 ~ +150 C g Tstg -- Parameter Conditions L = 100H Storage temperature Weight Typical value 1.2 Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, I D = 35A, VGS = 10V, RGEN = RGS = 50 IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = -100A/s Unit Min. Typ. Max. 100 -- -- -- -- 0.1 V A -- 1.0 -- 1.5 0.1 2.0 mA V -- 13 17 m -- -- 14 0.46 18 0.60 m V -- -- 68 8200 -- -- S pF -- -- 1150 600 -- -- pF pF -- -- 54 140 -- -- ns ns -- 830 -- ns -- -- 350 1.0 -- 1.5 ns V -- -- -- 115 1.00 -- C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 DRAIN CURRENT ID (A) 100 50 100 150 200 tw = 10ms 101 7 5 3 2 1ms 100 7 5 3 100ms 10ms TC = 25C Single Pulse DC 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 50 TC = 25C Pulse Test 60 3V 40 20 0.4 TC = 25C Pulse Test PD = 125W VGS = 10V 6V 5V 4V 0 102 7 5 3 2 CASE TEMPERATURE TC (C) 80 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 40 3.5V VGS = 10V 5V 4V 30 3V 20 2.5V 10 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) TC = 25C Pulse Test 1.6 1.2 ID = 100A 0.8 70A 0.4 30A 0 0 2 4 6 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 20 0 2 4 6 8 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 TC = 25C 75C 125C 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C 7 f = 1MHZ 5 3 2 Ciss 7 5 3 2 Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 4 2 105 VGS = 0V 103 7 5 3 2 10V 8 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 104 12 TRANSFER CHARACTERISTICS (TYPICAL) 60 2 VGS = 4V DRAIN CURRENT ID (A) 80 0 16 0 10 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 DRAIN CURRENT ID (A) 8 20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 104 7 5 3 2 Tch = 25C VDD = 50V VGS = 10V RGEN = RGS = 50 td(off) 103 7 5 3 2 tf tr 102 7 5 3 2 101 0 10 td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 4 VDS = 20V 50V 80V 2 0 40 80 120 160 60 40 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125C 75C 25C 20 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 80 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 100 Tch = 25C ID = 70A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 PDM 10-1 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999