MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) * * * * Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate Equivalent Circuit Top View S G Source Top View Ordering Information (Note 3) Part Number MMBF170-7-F Notes: Case SOT23 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com. K6Z C6Z K = SAT (Shanghai Assembly / Test site) C = CAT (Chengdu Assembly / Test site) 6Z = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM YM Marking Information Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 ... 2011 2012 2013 2014 2015 2016 2017 Code J K L M N P R ... Y Z A B C D E Month Code Jan 1 Feb 2 MMBF170 Document number: DS30104 Rev. 11 - 2 Mar 3 Apr 4 May 5 Jun 6 1 of 5 www.diodes.com Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D March 2012 (c) Diodes Incorporated MMBF170 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 4) Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID Value 60 60 20 40 500 800 Units V V Value 300 1.80 417 -55 to +150 Units mW mW/C K/W C V mA Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Symbol Total Power Dissipation (Note 4) PD Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range RJA TJ, TSTG Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 70 1.0 10 V A nA VGS = 0V, ID = 100A VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V VGS(th) RDS (ON) 3.0 5.0 5.3 Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time gFS 2.1 V Static Drain-Source On-Resistance 0.8 80 mS VDS = VGS, ID = 250A VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA VDS =10V, ID = 0.2A Ciss Coss Crss 22 11 2.0 40 30 5.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz ton toff 10 10 ns ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50 Notes: Test Condition 4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. MMBF170 Document number: DS30104 Rev. 11 - 2 2 of 5 www.diodes.com March 2012 (c) Diodes Incorporated MMBF170 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 4 3 2 1 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0.2 1.0 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 0 0 5 2.0 1.5 1.0 0.5 0 -55 6 70 95 -30 -5 20 45 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 400 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 5 Max Power Dissipation vs. Ambient Temperature 0 25 MMBF170 Document number: DS30104 Rev. 11 - 2 3 of 5 www.diodes.com March 2012 (c) Diodes Incorporated MMBF170 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Y Z C X MMBF170 Document number: DS30104 Rev. 11 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com March 2012 (c) Diodes Incorporated MMBF170 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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