
SKCD 04 C 060 I HD
© by SEMIKRON Rev. 0 – 18.02.2010 1
CAL-DIODE
SKCD
IF = 10 A
VRRM = 600 V
Size: 2 mm x 2 mm
SKCD 04 C 060 I HD
Features
• high current density
• easy paralleling due to a small forward
voltage spread
• positive temperature coefficient
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions Values Unit
VRRM Tj=25°C, I
R=0.1mA 600 V
IF(AV) Ts=80°C, T
j= 175 °C 11 A
IFSM 10 ms
sin 180°
Tj=25°C 75 A
Tj= 150 °C 65 A
Tjmax 175 °C
Electrical Characteristics
Symbol Conditions min. typ. max. Unit
i2tTj= 150 °C, 10 ms, sin 180° 21 A2s
IRTj=25°C, V
RRM = 600 V 0.10 mA
Tj= 150 °C, VRRM =600V mA
VFTj=25°C, I
F=7A 1.35 V
Tj= 150 °C, IF=7A 1.31 V
V(TO) Tj= 150 °C 0.85 V
rTTj= 150 °C 66.7 mΩ
Dynamic Characteristics
Symbol Conditions min. typ. max. Unit
trr Tj= 25 °C, 6 A, 300 V, 520 A/µs µs
trr Tj= 150 °C, 6 A, 300 V, 520 A/µs ns
Qrr Tj= 25 °C, 6 A, 300 V, 520 A/µs µC
Qrr Tj= 150 °C, 6 A, 300 V, 520 A/µs 0.89 µC
Irrm Tj= 25 °C, 6 A, 300 V, 520 A/µs A
Irrm Tj= 150 °C, 6 A, 300 V, 520 A/µs 11.2 A
Thermal Characteristics
Symbol Conditions min. typ. max. Unit
Tj-40 175 °C
Tstg -40 175 °C
Tsolder 10 min. 250 °C
Tsolder 5 min. 320 °C
Rth(j-s)
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip 3K/W
Mechanical Characteristics
Symbol Conditions Values Unit
Raster
size 2 x 2 mm2
Area total 4 mm2
Anode bondable (Al)
Cathode solderable (Ag/Ni)
Wire bond Al, diameter ≤ 500 µm
Package wafer frame
Chips /
Package 2661 (5" Wafer) pcs