STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-38294
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
J
SHEET
22
DSCC FORM 2234
APR 97
TABLE IA. Electrical performance characteristics - Continued.
│ │ Conditions 1/ │ │ │ │
Test │Symbol │ -55C TC +125C │Group A │Device │ Limits │Unit
│ │ GND = 0 V │subgroups │types │ │ │
│ │ 4.5 V VCC 5.5 V │ │ │ Min │ Max │
│ │ unless otherwise specified │ │ │ │ │
│ │ │ │ │ │ │
AS address latch │tLLEL │ See figures 4 and 5 │ 9,10,11 │ 44 │ │ 5 │ ns
control setup to │ │ │ │ │ │ │
start of write │ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ │ 4/ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
AS address latch │tEHLL │ │ 9,10,11 │ 44 │ 5 │ │ ns
control hold after │ │ │ │ │ │ │
end of write │ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Address setup to │tAVLH │ │ 9,10,11 │ 44,45 │ 15 │ │ ns
address latch │ │ │ │ │ │ │
│ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Address hold after │tLHAX │ │ 9,10,11 │ 44,45 │ 10 │ │ ns
address latch │ │ │ │ │ │ │
│ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Address latch width │tLLLH │ │ 9,10,11 │ 44,45 │ 20 │ │ ns
│ │ │ │ │ │ │
│ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Chip enable hold │tLHEL │ │ 9,10,11 │ 44 │ 0 │ │ ns
after address │ │ │M,D,P,L,R,F, │ 9 │ 3/ │4/ │ │
latch │ │ │ G,H │ 2/ │ │ │ │ ns
│ │ │ │ │ │ │ │
1/ AC measurements assume transition time 5 ns, input levels are from ground to 3.0 V, and output load CL 30 pF except
as noted on figure 5. Timing reference levels are 1.5 V. For devices 40, 41, and 43, input levels are VIL = 0.5 V, VIH =
V
CC - 0.5 V.
2/ When performing postirradiation electrical measurements for any RHA level TA = +25C. Limits shown are guaranteed at T
A = +25C ±5C. The M, D, P, L, R, F, G, and H in the test condition column are the postirradiation limits for the device
types specified in the device types column.
3/ Devices listed in 1.2.2 herein, that are to be marked with an RHA marking shall apply to all RHA levels unless otherwise
specified.
4/ Preirradiation values for RHA marked devices shall also be the postirradiation values unless otherwise specified.
5/ Tested initially and after any design or process changes which may affect that parameter, and therefore shall be guaranteed
to the limits specified in table IA.
6/ Functional tests shall include the test table and other test patterns used for fault detection as approved by the qualifying
activity. Outputs are measured at VOL < 1.5 V, VOH > 1.5 V. For devices 40, 41, and 43, outputs are measured at VOL < V
CC / 2, VOH > VCC / 2.
7/ This parameter measured ±500 mV from steady-state VOL or VOH.