2SK2992
2009-09-29
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2992
Chopper Regulator, DCDC Converter and Motor Drive
Applications
z Low drainsource ON resistance : RDS (ON) = 2.2 (typ.)
z High forward transfer admittance : |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode : Vth = 2.0 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drainsource voltage VDSS 200 V
Draingate voltage (RGS = 20 k) VDGR 200 V
Gatesource voltage VGSS ±20 V
DC (Note 1) ID 1 A
Drain current
Pulse (Note 1) IDP 3 A
Drain power dissipation PD 0.5 W
Drain power dissipation (Note 2) PD 1.5 W
Single pulse avalanche energy
(Note 3)
EAS 36 mJ
Avalanche current IAR 1 A
Repetitive avalanche energy (Note 4) EAR 0.05 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg 55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient Rth (cha) 250 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 56.7 mH, RG = 25 , IAR = 1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA SC-62
TOSHIBA 2-5K1B
Weight: 0.05 g (typ.)
2SK2992
2009-09-29
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Marking
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 μA
Drain cutoff current IDSS VDS = 200 V, VGS = 0 V 100 μA
Drainsource breakdown
voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 3.5 V
Drainsource ON resistance RDS (ON) V
GS = 10 V, ID = 0.5 A 2.2 3.5
Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.5 A 0.5 0.9 S
Input capacitance Ciss90
Reverse transfer capacitance Crss10
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
— 30 —
pF
Rise time tr9
Turnon time ton17
Fall time tf16
Switching time
Turnoff time toff — 45 —
ns
Total gate charge (gatesource
plus gatedrain) Qg — 3.0 —
Gatesource charge Qgs — 1.8 —
Gatedrain (“miller”) charge Qgd
VDD 160 V, VGS = 10 V, ID = 1 A
— 1.2 —
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR1 A
Pulse drain reverse current
(Note 1)
IDRP3 A
Forward voltage (diode) VDSF I
DR = 1 A, VGS = 0 V 1.5 V
Reverse recovery time trr — 85 — ns
Reverse recovery charge Qrr
IDR = 1 A, VGS = 0 V, dIDR / dt = 100 A / μs
— 190 — nC
Note 5: A line to the right of a Lot No. identifies the indication of
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z D
Part No.
(or abbreviation code)
Lot No.
Note 5
2SK2992
2009-09-29
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2SK2992
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2SK2992
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=
DDVDSS
VDSS
AS VB
B
IL
2
1
E2
RG = 25
V
DD = 50 V, L = 56.7 mH
2SK2992
2009-09-29
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