VRRM = IF = 3300 V 125 A Fast-Diode Die 5SLY 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1676-00 May 08 * * * * Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS nitride plus polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 3300 V IF 125 A 250 A -40 125 C typ max Unit Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 125 A Continuous reverse current IR VR = 3300 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 125 A, VR = 1800 V, di/dt = 640 A/s, L = 1200 nH, Inductive load, Switch: 2x 5SMY12M3300 min Tvj = 25 C 2.05 V Tvj = 125 C 2.2 V Tvj = 25 C 50 A Tvj = 125 C 2.5 mA Tvj = 25 C 175 A Tvj = 125 C 205 A Tvj = 25 C 90 C Tvj = 125 C 140 C Tvj = 25 C 680 ns Tvj = 125 C 880 ns Tvj = 25 C 105 mJ Tvj = 125 C 175 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLY 12M3300 250 250 Erec Irr 200 187.5 Erec [mJ], Irr [A], Qrr [C] IF [A] 25 C 125 C 125 Qrr 150 100 62.5 VCC = 1800 V di/dt = 640 A/s Tvj = 125 C L = 1200 nH 50 0 0 0 1 2 0 3 62.5 125 Typical diode forward characteristics 250 375 Typical reverse recovery characteristics vs. forward current VCC = 1800 V IF = 125 A Tvj = 125 C L = 1200 nH -250 250 -500 -750 IR 0 -1000 -62.5 -1250 -125 VR [V] 62.5 Irr 200 Erec 150 Qrr 100 -1500 50 VR -187.5 -1750 -250 0 -2000 0 1 2 3 4 5 200 6 Typical diode reverse recovery behaviour 400 600 800 1000 di/dt [A/s] time [s] Fig. 3 312.5 300 Erec [mJ], Irr [A] Qrr [C] 125 IR [A] Fig. 2 0 VCC = 1800 V IF = 125 A di/dt = 640 A/s Tvj = 125 C L = 1200 nH 187.5 250 IF [A] VF [V] Fig. 1 187.5 Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1676-00 May 08 page 2 of 3 5SLY 12M3300 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.6 x 13.6 mm exposed LxW front metal 10.4 x 10.4 mm 385 15 m 4 m 1.2 m thickness Metallization 3) 3) front (A) AlSi1 back (K) Al / Ti / Ni / Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1676-00 May 08