ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
= 3300
V
IF = 125
A
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA 1676-00 May 08
• Ultra low losses
• Fast and soft reverse-recovery
• Large SOA
• Passivation: SIPOS nitride plus polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage VRRM 3300
V
Continuous forward current IF 125 A
Repetitive peak forward current IFRM Limited by Tvjmax 250 A
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C
2.05 V
Continuous forward voltage VF IF = 125 A Tvj = 125 °C
2.2 V
Tvj = 25 °C
50 µA
Continuous reverse current IR VR = 3300 V Tvj = 125 °C
2.5 mA
Tvj = 25 °C
175 A
Peak reverse recovery current Irr Tvj = 125 °C
205 A
Tvj = 25 °C
90 µC
Recovered charge Qrr Tvj = 125 °C
140 µC
Tvj = 25 °C
680 ns
Reverse recovery time trr Tvj = 125 °C
880 ns
Tvj = 25 °C
105 mJ
Reverse recovery energy Erec
IF = 125 A,
VR = 1800 V,
di/dt = 640 A/µs,
Lσ = 1200 nH,
Inductive load,
Switch:
2x 5SMY12M3300
Tvj = 125 °C
175 mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLY 12M3300
5SLY 12M3300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1676-00 May 08 page 2 of 3
0
62.5
125
187.5
250
0 1 2 3
VF [V]
IF [A]
25 °C
125 °C
0
50
100
150
200
250
062.5 125 187.5 250 312.5 375
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 1800 V
di/dt = 640 A/µs
Tvj = 125 °C
Lσ = 1200 nH
Erec
Irr
Qrr
Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics
vs. forward current
-250
-187.5
-125
-62.5
0
62.5
125
187.5
250
0 1 2 3 4 5 6
time [µs]
IR [A]
-2000
-1750
-1500
-1250
-1000
-750
-500
-250
0
VR [V]
IR
VR
VCC = 1800 V
IF = 125 A
di/dt = 640 A/µs
Tvj = 125 °C
Lσ = 1200 nH
0
50
100
150
200
250
300
200 400 600 800 1000
di/dt [A/µs]
Erec [mJ], Irr [A] Qrr [µC]
VCC = 1800 V
IF = 125 A
Tvj = 125 °C
Lσ
= 1200 nH
Erec
Irr
Qrr
Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt
5SLY 12M3300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1676-00 May 08
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter Unit
Overall die
L x W 13.6 x 13.6 mm
exposed
front metal
L x W 10.4 x 10.4 mm
Dimensions
thickness 385 ± 15 µm
front (A) AlSi1 4 µm
Metallization 3) back (K) Al / Ti / Ni / Ag 1.2 µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
