1
GLT6200L08/M08/N08
ADVANCED
256K x 8 Super Low Power & Low Voltage SRAM
F
EATURES
◆
Organization: 256K x 8
◆
Low Data Retention Voltage: 1.5 V (min)
◆
Power Supply Voltage
- GLT6200L08: 2.7 V ~ 3.6 V
- GLT6200M08: 2.3 V ~ 2.7 V
- GLT6200N08: 1.8 V ~ 2.3 V
◆
Maximum 2 µA Standby Current
◆
Three-state output status and TTL compatible
◆
Package type; JEDEC standard 32-Pin SOP, 32-Pin
TSOP I, 32-Pin Shrink TSOP I
G
ENERAL
D
ESCRIPTION
The GLT 6200L08/M08/N08 Super Low-Power SRAM
family can support various voltage and operating tem-
perature ranges and has various package types for user
flexibility of system design. The family also support low
data retention voltage for battery back-up operations
with low data retention current.
Product Family
Organization Part Number V
CC
Isb1 Speed Temperature
256Kx8 GLT6200L/LI 2.7 ~ 3.6 V 2 µa 70/85/100 Commercial: 0 to +70°C
Industrial: -40 to +85°C
256Kx8 GLT6200M/MI 2.3 ~2.7 V 2 µa 100/120/150
256Kx8 GLT6200N/NI 1.8 ~ 2.3 V 2 µa 150/300
April 23, 1999
2G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
F
UNCTIONAL
B
LOCK
D
IAGRAM
Figure 1. GLT6200L08/M08/N08 256K x 8
A[17:0]
Addr Buffer
Memory Array
Data Path
Buffer
OE
WE
Control I/O [7:0]
Decoder
CS2
CS1
Signal Descriptions
Symbol Type Description
A[17:0] Input Address Inputs
WE Control Write Enable Input
CS1 Control Chip Select Input
CS2 Control Chip Select Input
OE Control Output Enable Input
I/O[7:0] I/O Data Input/Output
V
CC
Power Power
V
SS
Power Ground
NC N/A No Connection
Functional T ruth Table
[1]
CS1 CS2 WE OE Mode I/O [7:0] Current Mode
H X X X Not Select High-Z I
SB1
X L X X Not Select High-Z I
SB1
L H H H Output Disable High-Z I
CC
L H H L Read D
OUT
I
CC
L H L X Write D
IN
I
CC
1. X means don’t care (High or Low)
3
G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
E
LECTRICAL
S
PECIFICATIONS
Absolute Maximum Ratings
[1]
Parameter Rating
Voltage on any Pin Relative to V
SS
-0.2 V to V
CC
+ 0.5 V
Voltage on V
CC
Supply Relative to V
SS
-0.2 V to 4.0 V
Power Dissipitation 1.0 W
Storage Temperature -55 °C to +150 °C
Operation Temperature Commercial 0 °C to +70 °C
Industrial -40 °C to +85 °C
Soldering Temperature and Time 260 °C, 5 Sec (Lead Only)
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only,
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
[1] [2]
Symbol Description Product Min Typ
[3]
Max Units
V
CC
Supply Voltage GLT6200L
GLT6200M
GLT6200N
2.7
2.3
1.8
3.3
2.5
2.0
3.6
2.7
2.3
V
V
V
V
SS
Ground All Family 0 0 0 V
V
IH
Input High Voltage GLT6200L 2.2 – V
CC
+ 0.2
[4]
V
GLT6200M 2.0 – V
CC
+ 0.2
[4]
V
GLT6200N 1.6 – V
CC
+ 0.2
[4]
V
V
IL
Input Low Voltage All Family -0.2
[5]
– 0.4 V
1. Commercial product: T
A
= 0 to +70 °C, unless otherwise specified.
2. Industrial Product: T
A
= -40 to +85 °C, unless specified otherwise
3. T
A
= 25 °C
4. V
IH
(max) = V
CC
+ 1.0 V for
≤
20 ns pulse width
5. V
IL
(min) = -1.0V for
≤
20 ns pulse width
Capacitance
[1]
(f = 1MHz, T
A
= 25°C)
Symbol Description Conditions Min Max Units
C
IN
Input Capacitance V
IN
= 0 V - 8 pF
C
IO
Input/Output Capacitance V
IO
= 0 V - 10 pF
1. Capacitance is sampled, not 100% tested
4G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
DC Characteristics
Symbol Description Test Conditions
[1]
Min TYP Max Units
I
LI
Input Leakage Current V
IN
= V
SS
to V
CC
-1 – 1 µA
I
LO
Output Leakage Current CS1 = V
IH
or CS2 = V
IL
or WE = V
IL
, or OE = V
IH
V
IO
= V
SS
to V
CC
-1 – 1 µA
I
CC
Operating Power Supply Current CS1 = V
IL
, CS2 = V
IH
, V
IN
= V
IH
or V
IL
, I
IO
= 0 mA – – 12
[2]
mA
I
CC1
Average Operating Current Cycle time = 1 µs, 100% duty, CS1
≤
0.2V, CS2
≥
V
CC
- 0.2V,
I
IO
= 0 mA, V
IN
≤
0.2 V, or V
IN
≥
V
CC
- 0.2 V
– – 15
[2]
mA
I
CC2
Average Operating Current CS1 = V
IL
, CS2 = V
IH
, I
IO
= 0 mA
Min cycle, 100% duty
V
IN
= V
IL
or V
IH
V
CC
= 3.3V @ 70 ns – – 40
[3]
mA
V
CC
= 2.7V @ 100 ns – – 25
V
CC
= 2.2V @ 150 ns – – 15
V
OL
Output Low Voltage L
OL
V
CC
= 3.0/3.3V 2.1 mA – – 0.4 V
V
CC
= 2.5V 0.5 mA – – 0.4
V
CC
= 2.0V 0.33 mA – 0.4
V
OH
Output High Voltage L
OH
V
CC
= 3.0/3.3V -1.0 mA 2.4 – – V
V
CC
= 2.5V -0.5 mA 2.0 – –
V
CC
= 2.0V -0.44 mA 1.6 – –
I
SB
Standby Current (TTL) CS2
≤
V
IL
or
CS1
≥
V
IH,
CS2
≥
V
IH
– – 0.3 mA
I
SB1
Standby Current
(CMOS)
GLT6200x08SL CS1
≥
V
CC
- 0.2V, CS2
≥
V
CC
- 0.2V
or CS2
≤
0.2V
Super Low Power – 0.05
[4]
2
[5]
µA
GLT6200x08LL Low Low Power – – 10
[6]
µA
1. Commercial Products
T
A
= 0 to 70°C, V
CC
= 2.7 ~ 3.6V for GLT6200L Family, VCC = 2.3 (min) ~ 2.7V (max) for GLT6200M Family, V
CC
= 1.8 (min) ~ 2.3V (max) for GLT6200N Family
Industrial Product
T
A
= -40 to 85°C, V
CC
= 2.7 ~ 3.6V for GLT6200LI Family, V
CC
= 2.3 (min) ~ 2.7V (max) for GLT6200MI Family, V
CC
= 1.8 (min) ~ 2.3V (max) for GLT6200NI Family
2. The Value is measured at V
CC
= 3.6V. The value measured at V
CC
= 2.5/2.0V ± 0.2 is under the value of V
CC
= 3.6V
3. I
CC2
= 40 mA with 70 ns cycle at V
CC
= 2.7 ~ 3.6V, but the value is not 100% tested but obtained statistically
I
CC2
= 25 mA with 120 ns cycle at V
CC
= 2.5V ± 0.2, but the value is not 100% tested but obtained statistically
I
CC2
= 15 mA with 300 ns cycle at V
CC
= 1.8~ 2.3V, but the value is not 100% tested but obtained statistically
4. The value is not 100% tested but obtained statistically at Temp = 25°C
5. The value has a difference by ± 1 µA.
6. ISB1 = 10µA for VCC = 2.3 ~ 3.6V
ISB1 = 6µA for VCC = 1.8 ~ 2.3V
5G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
AC Timing Characteristics
Symbol Parameter
-70 -85 -100 -120 -150 -300
UnitMin Max Min Max Min Max Min Max Min Max Min Max
tRC Read Read Cycle Time 70 - 85 - 100 - 120 - 150 - 300 - ns
tAA Address Access Time - 70 - 85 - 100 - 120 - 150 - 300 ns
tCO Chip Select to Output - 70 - 85 - 100 - 120 - 150 - 300 ns
tOE Output Enable to Valid Output - 35 - 45 - 50 - 60 - 75 - 150 ns
tLZ Chip Select To Low-Z Output 10 - 10 - 10 - 10 - 20 - 50 - ns
tOLZ Output enable to Low-Z Output 5-5-5-5-10-30-ns
tHZ Chip Disable To High-Z Output 0 25 0 25 0 30 0 35 0 40 0 60 ns
tOHZ Output Disable to High-Z Output 0 25 0 25 0 30 0 35 0 40 0 60 ns
tOH Output Hold From Address
Change
10-15-15-15-15-30-ns
tWC Write Write Cycle Time 70 - 85 - 100 - 120 - 150 - 300 - ns
tCW Chip Select to end of Write 65 - 70 - 80 - 100 - 120 - 300 - ns
tAS Address Set-up time 0-0-0-0-0-0-ns
tAW Address Valid to end of Write 65 - 70 - 80 - 100 - 120 - 300 - ns
tWP Write Pulse Width 55 - 60 - 70 - 80 - 100 - 200 - ns
tWR Write Recovery time 0-0-0-0-0-0-ns
tWHZ Write To Output High-Z 0 25 0 25 0 30 0 35 0 40 0 60 ns
tDW Data to Write Time Overlap 30 - 35 - 40 - 50 - 60 - 120 - ns
tDH Data Hold From Write Time 0-0-0-0-0-0-ns
tOW End Write To Output Low-Z 5-5-5-5-5-20-ns
6 G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
Test Load and Input/Output Reference [1]
1. See test condition of DC and Operating Characteristics
Item Value Remark
Input Pulse Level 0.4 V to 2.2 V VCC = 3.3 V, 3.0 V, 2.5 V
0.4 V to 1.8 V VCC = 2.0 V
Input Rise Fall Time 5 ns -
Input And Output
Reference Voltage
1.5 V
1.1 V
0.9 V
VCC = 3.3 V, 3.0 V
VCC = 2.5 V
VCC = 2.0 V
Output Load CL = 100 PF + 1TTL See Test Condition #2
CL = 30 PF + 1TTL
R2
VTM
Figure 2.
CI
R1
NOTE:
1. Including Scope and jig capacitance
2. R1 = 3070Ω, R2 = 3150Ω
3. VTM = 2.8 for VCC = 3.0/3.3V, 2.3V for VCC = 2.5V, 1.8 V for VCC = 2.0V
Temperature and VCC Conditions
Product Family Temperature VCC Range Typical Supply VCC Speed (ns)
GLT6200N Commercial
0 °C to +70°C
1.8 (min) ~ 2.3V (max) 2.0 ± 0.2V 150 [1] / 300
GLT6200M 2.3 (min) ~ 2.7V (max) 2.5 ± 0.2V 100 [1] / 120 / 150
GLT6200L 2.7 (min) ~ 3.6V (max) 3.0 ± 0.3V 85 [1] / 100
GLT6200L 3.0 (min) ~ 3.6V (max) 3.3 ± 0.3V 70 [1] / 85
GLT6200NI Industrial
-40 °C to +85°C
1.8 (min) ~ 2.3V (max) 2.0 ± 0.2V 150 [1] / 300
GLT6200MI 2.3 (min) ~ 2.7V (max) 2.5 ± 0.2V 100 [1] / 120 / 150
GLT6200LI 2.7 (min) ~ 3.6V (max) 3.0 ± 0.3V 85 [1] / 100
GLT6200LI 3.0 (min) ~ 3.6V (max) 3.3 ± 0.3V 70 [1] / 85
1. Parameters are measured with 30 pF test load
7G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
Data Retention Characteristics
Symbol Description Conditions Min Typ Max Units
VDR VCC For Data Retention CS1 ≥ VCC - 0.2 V, CS2 ≥ VCC - 0.2 V
or CS2 ≤ 0.2 V
1.5 - 3.6 V
IDR Data Retention Current VCC = 3.0 V
CS1 ≥ VCC - 0.2 V, CS2 ≥ VCC - 0.2 V
or CS2 ≤ 0.2 V
Super Low Power - - 2 [1] µA
Low Low Power - - 10 [1]
tSDR Data Retention Set-up Time See Data Retention Waveform 0 - - ns
tRDR Recovery Time tRC --
1. IDR = 5µA for low low power at VCC = 1.5V
IDR = 1µA for super low power at VCC = 1.5V and need special handling.
Figure 3. Data Retention Timing Diagram
CS1 ≥ VCC -0.2V
VCC
GND & CS1
VDR
3.3/3.0/2.7/2.3/1.8V
2.2 V
CS1 Controlled tSDR tRDR
Data Retention Mode
CS2 ≥ VCC -0.2V
VCC
GND & CS2
VDR
3.3/3.0/2.7/2.3/1.8V
2.2 V
CS2 Controlled tSDR tRDR
Data Retention Mode
8 G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
Figure 4. Read Cycle Timing (Address Controlled, CS1 = OE = VIL, WE = CS2 = VIH)
DATA OUT
ADDRESS
tRC
tOH
tAA
PREVIOUS DATA VALID VALID DATA
NOTE:
1. tHZ and tOHZ are defined as the time at which the output achieves the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ (Max) is less than tLZ (Min) both for a given device and device to device interconnection.
Figure 5. Read Cycle Timing (WE = VIH)
CS1
ADDRESS
tRC
OE
DATA OUT
tCO
tAA
tOE
tLZ
tOLZ
HIGH-Z DATA VALID
tOHZ
tOH
NOTE:
1. tHZ and tOHZ are defined as the time at which the output achieves the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ (Max) is less than tLZ (Min) both for a given device and device to device interconnection.
HIGH-Z
CS2
tCO
9G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
Figure 6. Write Cycle Timing (WE Controlled)
CS1
ADDRESS
tWC
WE
CS2
DATA IN
tCW [2]
DATA VALID
DATA OUT
tWP [1]
tAS [3]
tDW tDH
tOW
tWHZ
DATA UNDEFINED
tAW
tWR [4]
High-Z High-Z
NOTE:
1. A write occurs during the overlap of a low CS1, A high CS2 and a low WE. A write begins at the latest transition among CS1 going and WE going low. A write ends at the earliest transition
among CS1 goes high and WE going high, tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of CS1 going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR1 applied encase a write ends at CS1, or WE going high.
tCW [2]
Figure 7. Write Cycle Timing (CS1 Controlled)
CS1
ADDRESS
tWC
WE
CS2
DATA IN
tCW [2]
DATA VALID
Data Out
tAW
tWP [1]
tDW tDH
tWR [4]
tAS [3]
High-Z
NOTE:
1. A write occurs during the overlap of a low CS1, A high CS2 and a low WE. A write begins at the latest transition among CS1 going and WE going low. A write ends at the earliest transition
among CS1 goes high and WE going high, tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of CS1 going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR1 applied encase a write ends at CS1, or WE going high.
tCW [2]
10 G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
Figure 8. Write Cycle Timing (CS2 Controlled)
CS1
ADDRESS
tWC
WE
CS2
DATA IN
tCW [2]
DATA VALID
DATA OUT
tAW
tWP [1]
tAS [3]
tDW tDH
HIGH-Z
NOTE:
1. A write occurs during the overlap of a low CS1, A high CS2 and a low WE. A write begins at the latest transition among CS1 going and WE going low. A write ends at the earliest transition
among CS1 goes high and WE going high, tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of CS1 going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR1 applied encase a write ends at CS1, or WE going high.
tBW
tWR [4]
11G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
PACKAGING INFORMATION
A11
A9
A8
A13
WE
CS 2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
Figure 9. 32-Pin TSOP and sTSOP I Pin Assignment
OE
A10
CS 1
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
VSS
I/O 2
I/O 1
I/O 0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Top View
12 G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
18.40 ± 0.10
20.00 ±0.20
0.10 max
0.15 +0.10/-0.05
0.50 ±0.10
Dimensions in millimeters
#1
#16
#32
#17
0°~ 8°
8.0 ±0.2
0.25
1.20 max
1.05 ±0.05
0.00 min
0.2
0.50
Figure 10. 32-Pin TSOP (Type I) 8 x20 Forward Package Dimensions
13G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
11.80 ±0.10
13.40 ±0.10
0.10 max
0.15 +0.10/-0.05
0.50 ±0.10
Dimensions in millimeters
#1
#16
#32
#17
8.40 max
0.25
1.20 max
1.05 ±0.05
0.00 min
0.2 +0.10/-0.05
0.50
Figure 11. 32-Pin sTSOP (Type I) 8 x13.4 Forward Package Dimensions
14 G-LINK Technology
GLT6200L08/M08/N08
April 23, 1999
ADVANCED
ORDERING INFO
GLT6200x08LL
Part Number
Standby
Current Cycle Time VCC Range Temperature Orientation Package
GLT6200L08LL-70TS 10 µA 70 ns 3.0 ~ 3.6 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200L08LL-85TS 10 µA 85 ns 2.7 ~ 3.6 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200L08LL-70ST 10 µA 70 ns 3.0 ~ 3.6 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200L08LL-85ST 10 µA 85 ns 2.7 ~ 3.6 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200M08LL-100TS 10 µA 100 ns 2.3 ~ 2.7 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200M08LL-120TS 10 µA 120 ns 2.3 ~ 2.7 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200M08LL-100ST 10 µA 100 ns 2.3 ~ 2.7 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200M08LL-120ST 10 µA 120 ns 2.3 ~ 2.7 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08LL-150TS 10 µA 150 ns 1.8 ~ 2.3 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08LL-150ST 10 µA 150 ns 1.8 ~ 2.3 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08LL-300TS 10 µA 300 ns 1.8 ~ 2.3 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200N08LL-300ST 10 µA 300 ns 1.8 ~ 2.3 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200x08LLI
Part Number
Standby
Current Cycle Time VCC Range Temperature Orientation Package
GLT6200L080LLI-70TS 10 µA 70 ns 3.0 ~ 3.6 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200L080LLI-85TS 10 µA 85 ns 2.7 ~ 3.6 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200L080LLI-70ST 10 µA 70 ns 3.0 ~ 3.6 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200L080LLI-85ST 10 µA 85 ns 2.7 ~ 3.6 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200M08LLI-100TS 10 µA 100 ns 2.3 ~ 2.7 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200M08LLI-120TS 10 µA 120 ns 2.3 ~ 2.7 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200M08LLI-100ST 10 µA 100 ns 2.3 ~ 2.7 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200M08LLI-120ST 10 µA 120 ns 2.3 ~ 2.7 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08LLI-150TS 10 µA 150 ns 1.8 ~ 2.3 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08LLI-150ST 10 µA 150 ns 1.8 ~ 2.3 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08LLI-300TS 10 µA 300 ns 1.8 ~ 2.3 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200N08LLI-300ST 10 µA 300 ns 1.8 ~ 2.3 Industrial Forward 32-Pin s-TSOP I (330mil)
15G-LINK Technology
GLT6200L08/M08/N08
ADVANCED
April 23, 1999
GLT6200x08SL
Part Number
Standby
Current Cycle Time VCC Range Temperature Orientation Package
GLT6200L08SL-70TS 2 µA 70 ns 3.0 ~ 3.6 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200L08SL-85TS 2 µA 85 ns 3.0 ~ 3.6 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200L08SL-70ST 2 µA 70 ns 2.7 ~ 3.6 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200L08SL-85ST 2 µA 85 ns 2.7 ~ 3.6 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200M08SL-100TS 2 µA 100 ns 2.3 ~ 2.7 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200M08SL-120TS 2 µA 120 ns 2.3 ~ 2.7 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200M08SL-100ST 2 µA 100 ns 2.3 ~ 2.7 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200M08SL-120ST 2 µA 120 ns 2.3 ~ 2.7 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08SL-150TS 2 µA 150 ns 1.8 ~ 2.3 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08SL-150ST 2 µA 150 ns 1.8 ~ 2.3 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08SL-300TS 2 µA 300 ns 1.8 ~ 2.3 Commercial Forward 32-Pin TSOP I (330mil)
GLT6200N08SL-300ST 2 µA 300 ns 1.8 ~ 2.3 Commercial Forward 32-Pin s-TSOP I (330mil)
GLT6200x08SLI
Part Number
Standby
Current Cycle Time VCC Range Temperature Orientation Package
GLT6200L080SLI-70TS 2 µA 70 ns 3.0 ~ 3.6 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200L080SLI-85TS 2 µA 85 ns 3.0 ~ 3.6 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200L080SLI-70ST 2 µA 70 ns 2.7 ~ 3.6 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200L080SLI-85ST 2 µA 85 ns 2.7 ~ 3.6 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200M08SLI-100TS 2 µA 100 ns 2.3 ~ 2.7 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200M08SLI-120TS 2 µA 120 ns 2.3 ~ 2.7 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200M08SLI-100ST 2 µA 100 ns 2.3 ~ 2.7 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200M08SLI-120ST 2 µA 120 ns 2.3 ~ 2.7 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08SLI-150TS 2 µA 150 ns 1.8 ~ 2.3 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08SLI-150ST 2 µA 150 ns 1.8 ~ 2.3 Industrial Forward 32-Pin s-TSOP I (330mil)
GLT6200N08SLI-300TS 2 µA 300 ns 1.8 ~ 2.3 Industrial Forward 32-Pin TSOP I (330mil)
GLT6200N08SLI-300ST 2 µA 300 ns 1.8 ~ 2.3 Industrial Forward 32-Pin s-TSOP I (330mil)
© 2001 G-LINK Technology
All rights reserved. No part of this document may be copied or reproduced in any form or by any means or transferred to any third party without the prior written consent of
G-LINK Technology.
Circuit diagrams utilizing G-LINK products are included as a means of illustrating typical semiconductor applications. Complete information sufficient for design purposes is
not necessarily given.
G-LINK Technology reserves the right to change products or specifications without notice.
The information contained in this document does not convey any license under copyrights, patent rights or trademarks claimed and owned by G-LINK or its subsidiaries.
G-LINK assumes no liability for G-LINK applications assistance, customer’s product design, or infringement of patents arising from use of semiconductor devices in such
systems’ designs. Nor does G-LINK warrant or represent that any patent right, copyright, or other intellectual property right of G-LINK covering or relating to any combination,
machine, or process in which such semiconductor devices might be or are used.
G-LINK Technology’s products are not authorized for use in life support devices or systems. Life support devices or systems are device or systems which are: a) intended for
surgical implant into the human body and b) designed to support or sustain life; and when properly used according to label instructions, can reasonably be expected to cause
significant injury to the user in the event of failure.
The information contained in this document is believed to be entirely accurate. However, G-LINK Technology assumes no responsibility for inaccuracies.
GLT6200L08/M08/N08
www.glinktech.com
G-LINK Technology
1753 South Main Street
Milpitas, California, 95035, USA
TEL: 408-240-1380 • FAX: 408-240-1385
G-LINK Technology Corporation, Taiwan
6F, No. 24-2, Industry E. Rd. IV
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Hsin Chu, Taiwan, R.O.C.
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