SFH601 TRIOS Phototransistor Optocoupler FEATURES * High Current Transfer Ratios SFH601-1, 40 to 80% SFH601-2, 63 to 125% SFH601-3,100 to 200% SFH601-4, 160 to 320% * Isolation Test Voltage (1.0 s), 5300 VRMS * VCEsat 0.25 (0.4) V, IF=10 mA, IC=2.5 mA * Built to conform to VDE Requirements * Highest Quality Premium Device * Long Term Stability * Storage Temperature, -55 to +150C * Field Effect Stable by TRIOS (TRansparent IOn Shield) * Underwriters Lab File #E52744 * CECC Approved * V VDE 0884 Available with Option 1 Dimensions in inches (mm) 3 Maximum Ratings Emitter Reverse Voltage ............................................6.0 V DC Forward Current ....................................60 mA Surge Forward Current (tp=10 s) ................2.5 A Total Power Dissipation ............................100 mW Detector Collector-Emitter Voltage............................. 100 V Emitter-Base Voltage .....................................7.0 V Collector Current .........................................50 mA Collector Current (t=1.0 ms) .....................100 mA Power Dissipation.....................................150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) (t=1.0 s) .................. 5300 VRMS Creepage ............................................... 7.0 mm Clearance............................................... 7.0 mm Isolation Thickness between Emitter and Detector .............................................. 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ..................... 175 Isolation Resistance VIO=500 V, TA=25C ............................ 1012 pin one ID 1 Anode 1 6 Base Cathode 2 5 Collector NC 3 4 Emitter .248 (6.30) .256 (6.50) 4 5 6 .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18 4 typ. D E DESCRIPTION The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. 2 .031 (0.80) min. 3-9 .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .114 (2.90) .130 (3.0) .010 (.25) typ. .300-.347 (7.62-8.81) Characteristics (TA=25C) Symbol Unit Condition Emitter Forward Voltage VF 1.25 (1.65) V IF=60 mA Breakdown Voltage VBR 6.0 V IR=10 A Reverse Current IR 0.01 (10) A VR=6.0 V Capacitance CO 25 pF VF=0 V f=1.0 MHz Thermal Resistance RTHJamb 750 K/W Capacitance Collector-Emitter Collector-Base Emitter-Base CCE CCB CEB 6.8 8.5 11 Thermal Resistance RTHJamb 500 K/W Saturation Voltage, Collector-Emitter VCEsat 0.25 (0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CIO 0.6 pF VI-O=0 f=1.0 MHz Detector pF f=1.0 MHz VCE=5.0 V VCB=5.0 V VEB=5.0 V Package VIO=500 V, TA=100C .......................... 1011 Storage Temperature Range ......-55C to +150C Ambient Temperature Range .....-55C to +100C Junction Temperature.................................. 100C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm).................................................. 260C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-221 March 11, 2000-22 Table 1. Current Transfer Ratio and Collector-emitter Leakage Current by Dash Number Parameter Dash No. Unit Condition -1 -2 -3 -4 IC/IF at VCE=5.0 V 40-80 63-125 100-200 160-320 % IF=10 mA IC/IF at VCE=5.0 V 30 (>13) 45 (>22) 70 (>34) 90 (>56) % IF=1.0 mA Collector-Emitter Leakage Current (ICEO) 2.0 ( 50) 2.0 ( 50) 5.0 ( 100) 5.0 ( 100) nA Figure 3. Current Transfer Ratio versus Diode Current (TA=-25C, VCE=5.0 V) IC/IF=f (IF) VCE=10 V Figure 1. Linear Operation (without saturation) RL=75 IF VCC=5 V IC 47 Figure 4. Current Transfer Ratio versus Diode Current (TA=0C, VCE=5.0 V) IC/IF=f (IF) Table 2. IF=10 mA, VCC=5.0 V, TA=25C, Typical Load Resistance RL 75 Turn-On Time tON 3.0 s Rise Time tR 2.0 Turn-Off Time tOFF 2.3 Fall Time tf 2.0 Cut-off Frequency FCO 250 kHz Figure 2. Switching Operation (with saturation) IF 1 K VCC=5 V Figure 5. Current Transfer Ratio versus Diode Current (TA=25C, VCE=5.0 V) IC/IF=f (IF) 47 Table 3. Typical Parameter Dash No. Unit -1 (IF=20 mA) -2 and -3 (IF=10 mA) -4 (IF=5.0 mA) Turn-On Time tON 3.0 4.2 6.0 Rise Time tR 2.0 3.0 4.6 Turn-Off Time tOFF 18 23 25 Fall Time tF 11 14 15 VCESAT s 0.25 (0.4) V 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH601 2-222 March 11, 2000-22 Figure 6. Current Transfer Ratio versus Diode Current (TA=50C, VCE=5.0 V) IC/IF=f (IF) Figure 9. Transistor Characteristics (HFE=550) IC=f(VCE) (TA=25C, IF=0) Figure 12. Collector Emitter Off-state Current ICEO=f (V, T) (TA=25C, IF=0) Figure 7. Current Transfer Ratio versus Diode Current (TA=75C, VCE=5.0 V) IC/IF=f (IF) Figure 10. Output Characteristics (TA=25C) IC=f(VCE) Figure 13. Saturation Voltage versus Collector Current and Modulation Depth SFH601-1 VCEsat=f (IC) (TA=25C) Figure 8. Current Transfer Ratio versus Temperature (IF=10 mA, VCE=5.0 V) IC/IF=f(T) Figure 11. Forward Voltage VF=f (IF) Figure 14. Saturation Voltage versus Collector Current and Modulation Depth SFH601-2 VCEsat=f (IC) (TA=25C) 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH601 2-223 March 11, 2000-22 Figure 15. Saturation Voltage versus Collector Current and Modulation Depth SFH601-3 VCEsat=f (IC) (TA=25C) Figure 17. Permissible Pulse Load D=parameter, TA=25C, IF=f (tp) Figure 16. Saturation Voltage versus Collector Current and Modulation Depth SFH601-4 VCEsat=f (IC) (TA=25C) Figure 18. Permissible Power Dissipation for Transistor and Diode Ptot=f (TA) 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) Figure 19. Permissible Forward Current Diode Ptot=f (TA) Figure 20. Transistor Capacitance C=f(VO) (TA=25C, f=1.0 MHz) SFH601 2-224 March 11, 2000-22