2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–221 March 11, 2000-22
SFH601
TRIOS
Phototransistor Optocoupler
FEATURES
• High Current Transfer Ratios
SFH601-1, 40 to 80%
SFH601-2, 63 to 125%
SFH601-3,100 to 200%
SFH601-4, 160 to 320%
• Isolation Test Voltage (1.0 s), 5300 V
RMS
•
V
CEsat
0.25 (
≤
0.4) V,
I
F
=10 mA,
I
C
=2.5 mA
• Built to conform to VDE Requirements
• Highest Quality Premium Device
• Long Term Stability
• Storage Temperature, –55
°
to +150
°
C
• Field Effect Stable by TRIOS
(TRansparent
IOn Shield)
• Underwriters Lab File #E52744
• CECC Approved
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH601 is an optocoupler with a Gallium Ars-
enide LED emitter which is optically coupled with
a silicon planar phototransistor detector. The
component is packaged in a plastic plug-in case
20 AB DIN 41866.
The coupler transmits signals between two elec-
trically isolated circuits.
Maximum Ratings
Emitter
Reverse Voltage ............................................6.0 V
DC Forward Current ....................................60 mA
Surge Forward Current (t
p
=10
µ
s) ................2.5 A
Total Power Dissipation ............................100 mW
Detector
Collector-Emitter Voltage............................. 100 V
Emitter-Base Voltage .....................................7.0 V
Collector Current .........................................50 mA
Collector Current (t=1.0 ms) .....................100 mA
Power Dissipation.....................................150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1.0 s) .................. 5300 V
RMS
Creepage ...............................................
≥
7.0 mm
Clearance...............................................
≥
7.0 mm
Isolation Thickness between Emitter and
Detector ..............................................
≥
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1 ..................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..........................
≥
10
11
Ω
Storage Temperature Range ......–55
°
C to +150
°
C
Ambient Temperature Range .....–55
°
C to +100
°
C
Junction Temperature..................................100
°
C
Soldering Temperature (max. 10 s, dip
soldering: distance to seating plane
≥
1.5 mm)..................................................260
°
C
V
DE
Characteristics
(
T
A
=25
°
C)
Symbol Unit Condition
Emitter
Forward Voltage
V
F
1.25
(
≤
1.65)
V
I
F
=60 mA
Breakdown Voltage
V
BR
≥
6.0 V
I
R
=10
µ
A
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
O
25 pF
V
F
=0 V
f=1.0 MHz
Thermal Resistance
R
THJamb
750 K/W
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
C
CE
C
CB
C
EB
6.8
8.5
11
pF f=1.0 MHz
V
CE
=5.0 V
V
CB
=5.0 V
V
EB
=5.0 V
Thermal Resistance
R
THJamb
500 K/W
Package
Saturation Voltage,
Collector-Emitter
V
CEsat
0.25 (
≤
0.4) V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance
C
IO
0.6 pF
V
I-O
=0
f=1.0 MHz
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH601
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–222 March 11, 2000-22
Table 1. Current Transfer Ratio and Collector-emitter Leakage Current
by Dash Number
Figure 1. Linear Operation
(without saturation)
Table 2.
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C, Typica
l
Figure 2. Switching Operation
(with saturation)
Table 3. Typical
Parameter Dash No. Unit Condition
-1 -2 -3 -4
I
C
/
I
F
at
V
CE
=5.0 V 40-80 63-125 100-200 160-320 %
I
F
=10 mA
I
C
/
I
F
at
V
CE
=5.0 V 30 (
>
13) 45 (
>
22) 70 (
>
34) 90 (
>
56) %
I
F
=1.0 mA
Collector-Emitter
Leakage Current
(
I
CEO
)
2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) 5.0 (
≤
100) nA
V
CE
=10 V
Load Resistance
R
L
75
Ω
Turn-On Time
t
ON
3.0 µs
Rise Time tR2.0
Turn-Off Time tOFF 2.3
Fall Time tf2.0
Cut-off Frequency FCO 250 kHz
Parameter Dash No. Unit
-1
(IF=20 mA)
-2 and -3
(IF=10 mA)
-4
(IF=5.0 mA)
Turn-On Time tON 3.0 4.2 6.0 µs
Rise Time tR2.0 3.0 4.6
Turn-Off Time tOFF 18 23 25
Fall Time tF11 14 15
VCESAT 0.25 (≤0.4) V
RL=75 Ω
VCC=5 V
IC
47 Ω
IF
IF1 KΩ
VCC=5 V
47 Ω
Figure 3. Current Transfer Ratio versus
Diode Current (TA=–25°C, VCE=5.0 V)
IC/IF=f (IF)
Figure 4. Current Transfer Ratio versus
Diode Current (TA=0°C, VCE=5.0 V)
IC/IF=f (IF)
Figure 5. Current Transfer Ratio versus
Diode Current (TA=25°C, VCE=5.0 V)
IC/IF=f (IF)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH601
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–223 March 11, 2000-22
Figure 6. Current Transfer Ratio
versus Diode Current (TA=50°C,
VCE=5.0 V) IC/IF=f (IF)
Figure 7. Current Transfer Ratio
versus Diode Current (TA=75°C,
VCE=5.0 V) IC/IF=f (IF)
Figure 8. Current Transfer Ratio
versus Temperature (IF=10 mA,
VCE=5.0 V) IC/IF=f(T)
Figure 9. Transistor Characteristics
(HFE=550) IC=f(VCE) (TA=25°C, IF=0)
Figure 10. Output Characteristics
(TA=25°C) IC=f(VCE)
Figure 11. Forward Voltage VF=f (IF)
Figure 12. Collector Emitter
Off-state Current ICEO=f (V, T)
(TA=25°C, IF=0)
Figure 13. Saturation Voltage
versus Collector Current and
Modulation Depth SFH601-1
VCEsat=f (IC) (TA=25°C)
Figure 14. Saturation Voltage versus
Collector Current and Modulation
Depth SFH601-2 VCEsat=f (IC) (TA=25°C)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH601
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–224 March 11, 2000-22
Figure 15. Saturation Voltage versus
Collector Current and Modulation
Depth SFH601-3 VCEsat=f (IC) (TA=25°C)
Figure 16. Saturation Voltage versus
Collector Current and Modulation
Depth SFH601-4 VCEsat=f (IC) (TA=25°C)
Figure 17. Permissible Pulse Load
D=parameter, TA=25°C, IF=f (tp)
Figure 18. Permissible Power
Dissipation for Transistor and Diode
Ptot=f (TA)
Figure 19. Permissible Forward
Current Diode Ptot=f (TA)
Figure 20. Transistor Capacitance
C=f(VO) (TA=25°C, f=1.0 MHz)
