RUE003N02 Transistor 2.5V Drive Nch MOSFET RUE003N02 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET EMT3 zApplications Switching zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Source (2)Gate Abbreviated symbol : QT (3)Drain zPackaging specifications Package Type zEquivalent circuit Taping Drain TL Code Basic ordering unit (pieces) 3000 RUE003N02 Gate zAbsolute maximum ratings (Ta=25C) Parameter 1 Symbol Limits Unit VDSS 20 V Drain-source voltage VGSS 8 V ID 300 mA IDP1 600 mA Total power dissipation PD2 150 mW Channel temperature Tch 150 C Range of storage temperature Tstg -55 to +150 C Gate-source voltage Continuous Drain current Pulsed 2 Source 1 ESD PROTECTION DIODE 2 BODY DIODE 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) 833 C / W Each terminal mounted on a recommended land 1/3 RUE003N02 Transistor zElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=8V, VDS=0V V(BR)DSS 20 - - V ID=1mA, VGS=0V Gate-source leakage Drain-source breakdown voltage Conditions IDSS - - 1.0 A VDS=20V, VGS=0V Gate threshold voltage VGS(th) 0.3 - 1.0 V VDS=10V, ID=1mA Static drain-source on-state resistance - 0.7 1.0 RDS(on) ID=300mA, VGS=4.0V - 0.8 1.2 ID=300mA, VGS=2.5V - 1.0 1.4 ID=300mA, VGS=1.8V ID=300mA, VDS=10V Zero gate voltage drain current Forward transfer admittance |Yfs| 400 - - ms Input capacitance Ciss - 25 - pF VDS=10V Output capacitance Coss - 10 - pF VGS=0V Reverse transfer capacitance Crss - 10 - pF f=1MHz Turn-on delay time td(on) - 5 - ns ID=150mA, VDD tr - 10 - ns VGS=4.0V td(off) tf - 15 - ns RL=67 - 10 - ns RG=10 Rise time Turn-off delay time Fall time 10V Pulsed zBody diode characteristics (Source-drain) (Ta=25C) Parameter Symbol VSD Forward voltage Min. Typ. Max. - - 1.2 Unit V Conditions IS= 100mA, VGS=0V Pulsed zElectrical characteristic curves 10 0.1 0.01 Ta=125C 75C 25C -25C 0.001 0.0001 0.00001 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical transfer characteristics 10 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed Ta=125C 75C 25C -25C 1 0.1 0.01 0.1 DRAIN CURRENT : ID (A) Fig.2 Static drain-source on-state resistance vs. drain current () 1 VGS=2.5V Pulsed Ta=125C 75C 25C -25C 1 0.1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.3 Static drain-source on-state resistance vs. drain current () 2/3 RUE003N02 Transistor 1 0.1 0.01 0.1 1 Ta=125C 75C 25C -25C 0.1 0.01 0.0 0.5 1 1.5 Ta=25C f=1MHZ VGS=0V Ciss 10 Crss 1 0.01 0.1 1 Coss 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Static drain-source on-state resistance vs. drain current () 1000 100 VGS=0V Pulsed CAPACITANCE : C (pF) Ta=125C 75C 25C -25C DRAIN CURRENT : ID (A) SWITHING TIME : t (ns) 1 VGS=1.8V Pulsed SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) 10 Fig.6 Typical capacitance vs. drain-source voltage Fig.5 Source current vs. source-drain voltage Ta=25C VDD=10V VGS=4V RG=10 Pulsed 100 td(off) tf td(on) 10 tr 1 0.01 1 0.1 DRAIN CURRENT : ID (A) Fig.7 Switching characteristics zSwitching characteristics measurement circuit Pulse width VGS RG ID VDS D.U.T. VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.8 Switching time measurement circuit tr td (off) tf toff Fig.9 Switching time waveforms 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0