RUE003N02
Transistor
1/3
2.5V Drive
Nch
MOSFET
RUE003N02
zStructure
Silicon N-channel
MOSFET
zA pplications
Switching
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy .
zDimensions (Unit : mm)
(1)Source
(2)Gate
(3)Drain
EMT3
Abbreviated symbol : QT
zPackaging specifications zEquivalent circuit
TL
3000
RUE003N02
Type
Package
Code
Basic ordering unit
(pieces)
Taping
zA bsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
V
DSS
V
GSS
P
D
∗
2
Tch
20 V
V
mA
mW
°C
±8
±300I
D
I
DP
∗
1
Continuous
Pulsed mA±600
150
150
Tstg °C−55 to +150
Symbol Limits Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol Limits Unit
Channel to ambient
∗ Each terminal mounted on a recommended land
833
∗
Drain
Source
Gate
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
RUE003N02
Transistor
2/3
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
Ciss
|Y
fs
|
Coss
Crss
Min.
−
20
−
0.3
−
−
400
−
−
−
−
−
−
0.7
25
−
10
10
10
−
1.0
1.0
1.0
−0.8 1.2
−
−
−
−
µAV
GS
=±8V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=300mA, V
GS
=4.0V
I
D
=300mA, V
GS
=2.5V
V
DS
=10V
I
D
=300mA, V
DS
=10V
V
GS
=0V
f=1MHz
V
µA
V
Ω
Ω
−1.0 1.4 I
D
=300mA, V
GS
=1.8V
Ω
pF
ms
pF
pF
t
d(on)
−5−I
D
=150mA, V
DD
10V
ns
t
r
−10 −V
GS
=4.0V
ns
t
d(off)
−15 −R
L
=67Ω
ns
t
f
−10 −R
G
=10Ω
ns
Typ. Max. Unit Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
t
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Static drain-source on-state
resistance ∗
∗ Pulsed
∗
∗
∗
∗
∗
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−1.2 V I
S
= 100mA, V
GS
=0VForward voltage
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
∗ Pulsed
zElectrical characteristic curves
0.0 0.5 1.0 1.5
0.00001
0.0001
0.001
0.01
0.1
1
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Typical transfer characteristics
Ta=125°C
75°C
25°C
−25°C
V
DS
=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
DRAIN CURRENT : ID (A)
0.1
1
10
0.01 0.1 1
Fig.2 Static drain-source on-state
resistance vs. drain current (Ι)
Ta=125°C
75°C
25°C
−25°C
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
DRAIN CURRENT : I
D
(A)
0.1
1
10
0.01 0.1 1
Fig.3 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
RUE003N02
Transistor
3/3
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
DRAIN CURRENT : I
D
(A)
0.1
1
10
0.01 0.1 1
Fig.4 Static drain-source on-state
resistance vs. drain current (ΙΙΙ)
Ta=125°C
75°C
25°C
−25°C
V
GS
=1.8V
Pulsed
SOURCE CURRENT : I
S
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.510.50.0
0.01
0.1
1
Ta=125°C
75°C
25°C
−25°C
Fig.5 Source current vs.
source-drain voltage
V
GS
=0V
Pulsed
0.01 0.1 1 10 100
1
100
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
10
C
iss
C
oss
C
rss
Ta=25°C
f=1MH
Z
V
GS
=0V
Fig.6 Typical capacitance vs.
drain-source voltage
0.01 0.1
10
SWITHING TIME : t (ns)
DRAIN CURRENT : I
D
(A)
100
1000
11
Fig.7 Switching characteristics
t
d(off)
t
r
t
d(on)
t
f
Ta=25°C
V
DD
=10V
V
GS
=4V
R
G
=10Ω
Pulsed
zSwitching characteristics measurement circuit
Fig.8 Switching time measurement circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90% 50%
10%
90%
10%
50%
Pulse width
10%
V
GS
V
DS
90%
tf
toff
td (off)
tr
ton
td (on)
Fig.9 Switching time waveforms
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Copyright © 2007 ROHM CO.,LTD.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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FAX : +81-75-315-0172
Appendix
