A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
MINIMUM
inches / m m
.100 / 2.54
.1 1 0 / 2 .7 9
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
.396 / 10.06
.407 / 10.34
.130 / 3.30
inches / m m
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.0 0 7 / 0 .1 8
H
F
C E
N
ØD
M
G
4x .062 x 45°
P
L K
I
J
2X B .025 x 45°
A
N
M.118 / 3.00 .131 / 3.33
.020 / 0.51 .030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03 .415 / 10.54
.072 / 1.83.052 / 1.32
P .230 / 5.84
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 10 mA 65 V
BVCER IC = 25 mA RBE = 10 Ω 65 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCE = 50 V 25 mA
hFE VCE = 5.0 V IC = 1.0 A 15 120 ---
PG
ηC
POUT
VCC = 50 V PIN = 250 W f = 1025 - 1150 MHz 6.2
40
250
6.5
38
270
dB
%
W
NPN SILICON RF POWER TRANSISTOR
MSC81250M
DESCRIPTION:
The ASI MSC81250M is Designed for
DME/TACAN Applications up to 1150
MHz.
FEATURES:
• Internal Input/Output Matching Networks
• PG = 6.2 dB at 250 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 17.8 A
VCC 55 V
PDISS 600 W @ TC ≤ 80 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θJC 0.2 °C/W
PACKAGE STYLE .400 2NL FLG
1
2
3
1 = Collector 2 = Base 3 = Emitter
