APTM10DSKM09T3G Dual Buck chopper MOSFET Power Module 13 14 Q1 Application * AC and DC motor control * Switched Mode Power Supplies Q2 Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance Symmetrical design * Internal thermistor for temperature monitoring * High level of integration 11 18 22 7 23 8 19 10 CR1 29 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 VDSS = 100V RDSon = 9m typ @ Tj = 25C ID = 139A @ Tc = 25C 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single buck of twice the current capability * RoHS Compliant Absolute maximum ratings Max ratings Unit 100 V Tc = 25C 139 ID Continuous Drain Current A Tc = 80C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 10 m PD Maximum Power Dissipation Tc = 25C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors. July, 2006 Parameter Drain - Source Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10DSKM09T3G - Rev 1 Symbol VDSS APTM10DSKM09T3G All ratings @ Tj = 25C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 9875 3940 1470 350 Max 100 500 10 4 100 Unit Max Unit nC 35 70 125 552 J 604 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Test Conditions ns 95 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 139A, R G = 5 608 J 641 Min Typ Max 200 IF = 100A VR = 133V di/dt =200A/s www.microsemi.com Unit V Tj = 25C Tj = 125C Tc = 80C IF = 100A IF = 200A IF = 100A m V nA 180 Inductive switching @ 125C VGS = 15V VBus = 66V ID = 139A R G = 5 VR=200V A pF 60 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 9 2 VGS = 10V VBus = 50V ID =139A Symbol Characteristic Typ Tj = 25C Tj = 125C VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V Diode ratings and characteristics VRRM Min 250 500 Tj = 125C 100 1 1.4 0.9 Tj = 25C 60 Tj = 125C Tj = 25C 110 200 Tj = 125C 840 A A V July, 2006 Symbol ns nC 2-6 APTM10DSKM09T3G - Rev 1 Electrical Characteristics APTM10DSKM09T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min R 25 Unit C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Max 0.32 0.55 Typ 50 3952 Max C N.m g Unit k K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10DSKM09T3G - Rev 1 July, 2006 28 17 1 APTM10DSKM09T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 VGS=15V, 10V & 9V 500 ID, Drain Current (A) 400 300 8V 200 7V 6V 100 V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25C 20 0 T J=125C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 69.5A 1.1 V GS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 140 RDS(on) vs Drain Current ID, DC Drain Current (A) 120 100 0.8 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance T J=-55C 0 TC, Case Temperature (C) www.microsemi.com 4-6 APTM10DSKM09T3G - Rev 1 ID, Drain Current (A) 600 APTM10DSKM09T3G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 69.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 limited by RDSon 100s 100 1ms Single pulse TJ=150C TC=25C 10 0.6 10ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=139A T J=25C 14 VDS=20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (C) www.microsemi.com 5-6 APTM10DSKM09T3G - Rev 1 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10DSKM09T3G Delay Times vs Current Rise and Fall times vs Current 160 120 t d(off) 80 VDS=66V RG=5 T J=125C L=100H 60 40 td(on) 120 100 tr 60 40 20 0 0 0 50 100 150 200 I D, Drain Current (A) 250 0 50 100 150 200 ID, Drain Current (A) 250 Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 VDS=66V RG=5 TJ=125C L=100H 1 Switching Energy (mJ) 1.5 Eoff Eon 0.5 Eon VDS=66V ID=139A T J=125C L=100H 2 1.5 Eoff 1 Eon 0.5 0 0 0 50 100 150 200 250 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current 200 150 ZVS 100 ZCS Hard switching 50 0 25 50 75 100 125 30 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=66V D=50% RG=5 T J=125C T C=75C 250 20 Gate Resistance (Ohms) 300 Frequency (kHz) tf 80 20 Eon and Eoff (mJ) V DS=66V R G=5 T J=125C L=100H 140 t r and tf (ns) t d(on) and td(off) (ns) 100 1000 TJ=150C 100 TJ=25C 10 150 I D, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10DSKM09T3G - Rev 1 July, 2006 VSD, Source to Drain Voltage (V)