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BB804...
Silicon Variable Capacitance Diode
• For FM tuners
• Monolithic chip with common cathode
for perfect tracking of both diodes
• Uniform "square law" characteristics
• Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration
• Pb-free (ROHS compliant) package
BB804
!
,
,
Type Package Configuration LS(nH) Marking
BB804 SOT23 common cathode 1.8 SF1/2/3*
*For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR18 V
Peak reverse voltage VRM 20
Forward current IF50 mA
Operating temperature range Top -55 ... 125 °C
Storage temperature Tst
g
-55 ... 150
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 16 V
VR = 16 V, TA = 65 °C
IR
-
-
-
-
20
200
nA
AC Characteristics
Diode capacitance1)
VR = 2 V, f = 1 MHz
CT42 - 47.5 pF
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
CT2/CT8 1.65 1.71 -
Series resistance
VR = 2 V, f = 100 MHz
rS- 0.18 - Ω
Figure of merit
f = 100 MHz, VR = 2 V
Q- 200 -
Temperature coefficient of diode capacitance
VR = 2 V, f = 1 MHz
TCC- 330 - ppm/
K
1 Capacitance groups at 2V , coded 1; 2 ; 3
CT/groups 1 2 3
C2V min 43pF 44pF 45pF
C2V max 44.5pF 45.5pF 46.5pF
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
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Diode capacitance CT = ƒ (VR)
f = 1MHz
10
EHD07050
CT
R
V
-1 0
10 1
10 2
10V
0
10
20
30
40
50
60
70
pF
80
Capacitance ratio CTref/CT = ƒ (VR)
f = 1MHz
0
EHD07051
CT
R
V
0
T
C
51015V20
1
2
3
ref CT
T1V
C
CT2V
T
C
Temperatur coefficient TCC = ƒ (VR)
10
EHD07052
TC
C
R
V
-5
-4
10
10
-3
K
-1
10
0
10
2
10V
1
10
1
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Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
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BB804...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
