TRANSISTOR MODULE QCA200AA120 UL;E76102 M QCA200AA120 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. 113max C2E1 B2X C 15 27 E2 B2 3-M6 B1 E1 E2 B1X Applications Motor ControlVVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 46.5 B2X VCEX=1200V Low saturation voltage for higher efficiency High DC current gain hFE Isolated monuting base 90max. 700.2 IC=200A, B2 E2 Tab110 t =0.5 34.5 C1 C2E1 31max. E2 NAME PLATE E1 B1 B1X Maximum Ratings Symbol 930.2 25 25 31.5 UnitA Tj25 unless otherwise specified Item Conditions Ratings QCA200AA120 Unit VCBO Collector-Base Voltage Emitter open 1200 V VCEX Collector-Emitter Voltage VBE-2V 1200 V IC40AIB2-5A 1200 V 10 V Collector Current 200 A Reverse Collector Current 200 A 10 A VCEXSUS Collector-Emitter Sustaning Voltage VEBO IC -IC Emitterr-Base Voltage Collector open IB Base Current PC Collector-Emitter power dissipation Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage(RMS) A.C. 1minute Mounting Torque(M6) Recommended Value 2.5-3.925-40 Mass Typical Value TC25 1560 W -40 to 150 -40 to 125 2500 V 4.748 Nm (fB) 675 g Electrical Characteristics Symbol Item Conditions ICBO Collector Cut-off Current VCB1000V Emtter open IEBO Emitter Cut-off Current VEB10V Collector open hFE D.C. Current Gain Ic200AVCE5V VCE(sat) Collector-Emitter Sturation Voltage VBE(sat) Base-Emitter Saturation Voltage ton tstg Switching Time VECO Rth(j-c) Storage Time Fall Time Collector-Emitter Reverse Voltage (Diode forward voltage drop) Thermal Impedance (Junction to case) SanRex Min. Max Unit 4.00 mA 500 mA Ic200AIB4A 3.0 V Ic200AIB4A 3.5 V On Time tf Ratings 75 3.0 Vcc600VIc200A IB14AIB2-4A 15.00 s 3.0 -Ic200A 1.8 Transistor part 0.08 Diode part 0.35 V /W (R) 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/ D.C. Current Gain Typical VCE 5V VCE 2.8V DC Current Gain hFE Tj 125 Tj 25 Collector-Emitter Voltage V V Base-Emitter Voltage VBEV QCA200AA120 Saturation Characteristics Typical Tj 25 Tj 125 IB 4.0A VBEsat VCEsat Forward Bias Safe Operating Area 50 s Collector Current IcA TC 25 Non-Repetitive Single pulse IB2 -4A IB2 -8A Tj 125 Thermal Limit Collector Reverse Current -IcA Collector Current Derating Factor Typical Tj 25 tf IB1 4A IBZ -4A VCC 600V ton - Tj 25 Tj 125 Transient Thermal Impedance 100msec100sec Maximum Transistor Part - - ts Emitter-Collector Voltage VECOV Current Vs Switching Time Transient Thermal Impedance j-c/W Forward Voltage of Free Wheeling Diode Case Temperature Collector Collector-Emitter Voltage VCEV Second Breakdown Limit Derating Factor% Collector-Emitter Voltage VCEV Switching Time ton tf tss 0 Reverse Bias Safe Operating Area Pulse Wide 10 20 0s 0 s Collector Current IcA Collector Current IcA Collector Current IcA 200sec100msec - Collector Current IcA - - - - Time tsec SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/