MITSUBISHI Nch POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE FS1VS-18A OUTLINE DRAWING Dimensions in mm | fp TOSMAK eS | i | \ | 3 r 4 2a xB SF] =) a. 3 a Lo | + WY | AYO amu p+ Pts 08 2 ~t oz a S| i O 24 el ! i) GATE ; 2 DRAIN 3, SOURCE OVDSS crete e eter e eee eeee eet ene eres 900V x 4 ORAIN @ (DS (ON) (MAX) crretec eter etree rece eee nenees 15.00 oo e ID eee ee eee e tbe eee ee tee reat tae eee et ere rnress 4A To-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Vas = 0V 900 Vv Vass Gate-source voltage Vos = 0V +30 Vv ID Drain current 1 A lpm Drain current (Pulsed) 3 A Pp Maximum power dissipation 65 Ww Ten Channel! temperature 55 ~ +150 C Tatg Storage temperature i 55 ~ +150 C _ Weight Typical value 1.2 9 2 - 558 MITSUBISHI ELECTRICELECTRICAL CHARACTERISTICS (Tech = 25C) MITSUBISHI Nch POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - Limits Unit Min. Typ. Max V (BR) DSS | Drain-source breakdown voltage | ID = 1mA, VGS = OV 900 v V (BR) GSS | Gate-source breakdown voltage | las = +100uA, VDs = OV +30 _ _ Vv Iass Gate leakage current VGS = t25V, Vos = OV _ _ +10 BA loss Drain current Vos = 900V, Vas = 0V _ _ 1 mA VGS (th) Gate-source threshold valtage Ip = mA, Vos = 10V 2 3 4 v rDS (ON) | Drain-source on-state resistance | ID = 0.5A, VGS = 10V _ 11.5 15.0 Q Vos (ON) | Drain-source on-state voltage | ID = 0.5A, VGS = 10V ~ 5.75 7,50 Vv iyts | Forward transfer admittance _| ID = 0.5A, Vos = 10V 0.6 1.0 = Ss Ciss Input capacitance _ 270 _ pF Coss Output capacitance Vps = 25V, Vas = OV, f = IMHz 26 pF Crss Reverse transfer capacitance _ 4 _ pF td (on) Turn-on delay time ~ 9 _ ns tr Rise time Vbb = 200V, ID = 0.5A, Vas = 10V, - 12 = ns td (off) Turn-off delay time RGEN = AGS = 502 -- 35 _ ns tt Fall tirne _ 30 = ns VsD Source-drain voltage Is = 0.5A, Vas = OV _ 1.0 1.5 Vv Rth (ch-c). | Thermal resistance Channel te case 1.92 CAV PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 101 5 = 3 = 80 = 3 ao. a 2 ~ 100 tw = 100us Q 60 5 Ee nt 5 <= iv o. ac 3 ims a 5 2 ao 40 o a 2 10-1 10ms fam a 7 100ms uit c 5 DC = 20 a 3>- Te = 25C a 2} Single Pulse 0 10-2 0 50 100 150 200 1009 23 57101 23 57102 23 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vops (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 20 VGE = 20V VGE = 20V10V "| tease Tov *{PP = 65W SVL te = 25C Pulse Test Pulse Test z 16 < 2 2 5 12 5 i i a xc 5 B 08 & Zz z < < cc 5 04 a 4V 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vps (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 859 ELECTRICMITSUBISHI Nch POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 - Te = 26C ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 Te = 26C Pulse Test Pulse Test KE 40 FG 46 .t> << 5 = Bez Vas = 10V 26 zo F Oe 30 og 12 wo w= o> Ow Cw fo O 20 5 z 8 a @ fe za zQ zO gn c> 10 inal i 4 a a 0 0 0 4 8 42 16 20 10-2 23 5710-12 3 57100 23 57101 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 2.0 101 To = 25C 7 VbS = 15V Vbs = 50V Pulse Test = 16 Pulse Test 5 oS me 3 a i S 2 B42 g- i uu i FO 190 5 G2 7 Oo 08 < E z Ze 5 3 53 5 04 wt 3 2 0 10-3 QO 4 8 12 16 20 107 2 3 5 710 2 3 #5 710! GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 3 3 10 Teh = 25C 5 2 Vop = 200V 3 Ves = 10V S 2 g 102 Roen = Res = 5002 WS 102 ? 93 7 eS 5 O 5 - og 3 Q 3 as ? zt 2 < 1 Ss) og 10 e 6 o S 101 ah Teh = 25C Crss o 7 2 f= 1MHZ 5 Vas = 0V 0 103 57109 23 5710! 23 57102 2 fon 23 57709 2 3 5 710 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ip (A) 2 - 60 MITSUBISHI ELECTRICDRAIN-SOURGE ON-STATE RESISTANCE ros (On) (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V iar) oss (C) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (25C) GATE-SOURCE VOLTAGE Ves (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) 088 (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Toh = 25C ID=1A + a = hp VDs = 250V 8 400V 600V 0 4 8 12 16 20 GATE CHARGE Qag (nC) ON-STATE RESISTANCE V8. CHANNEL TEMPERATURE (TYPICAL) 101 7 Vas = 10V Ip = 1/210 5 Puise Test 3 2 10 7 5 3 2 10-1 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V jo = 1mA 50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE Zt (ch-c) C/W) 10! 3 _ oO = ~ NO UNG wo b MO aN Se ~ Qo SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) an nN MITSUBISHI Nch POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Vas = 0V Pulse Test re 5 125C eg 25C 0 0.8 1.6 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Ysp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V fo= imA 50 0 50 100 150 GHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10-423 5710-323. 5710-223 5710-123 5710023 5710! 23 5710 PULSE WIDTH tw (s) MITSUBISHI ELECTRIC 2~ 561