BCY59 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE, SMALL SIGNAL, NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS * JAN LEVEL SCREENING OPTIONS 2.54 (0.100) Nom. 3 1 2 TO-18 (TO-206AA) Pin 1 - Emitter APPLICATIONS: Intended for use in audio input stages, driver stages and low noise input applications. The Underside View PAD 2 - Base PAD 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCEO Collector - Emitter Voltage (IB =0) VBEO IC PTOT Emitter - Base Voltage (IC =0) TJ, TSTG RJC RJA Collector Current Total Power Dissipation @ Tamb 25C @ Tc 45C Maximum Junction And Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 45V 7V 200mA 390mW 1W -55C to 175C 150C/W 385C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5253 Issue 1 BCY59 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector-Emitter Breakdown Voltage IB=0 IC=2mA 45 V V(BR)EBO Emitter-Base Breakdown Voltage IC=0 IE=10A 7 V ICES Collector Cut-off Current VCE=45V VBE=0V 0.1 10 nA TC=150C 0.1 10 A ICEX VCE=45V VBE= -0.2V 20 A IEBO Collector Cut-off Current (TC=100C) Emitter Cut-off Current IC=0 VEB=5V 10 nA VBE(sat) * Base-Emitter Saturation Voltage IC=10mA IB=0.25mA 600 700 850 IC=100mA IB=2.5mA 750 900 1200 IC=10mA IB=0.25mA 120 350 IC=100mA IB=2.5mA 400 700 IC=2mA VCE=5V 120 IC=10mA VCE=1V 80 IC=100mA VCE=1V 40 IC=10A VCE=5V 20 IC=2mA VCE=5V 180 310 IC=10mA VCE=1V 120 400 IC=100mA VCE=1V 45 IC=10A VCE=5V 40 IC=2mA VCE=5V 250 460 IC=10mA VCE=1V 160 630 IC=100mA VCE=1V 60 VCE=5V 200 3.5 11 6 15 pF dB VCE(sat) * hFE Base-Emitter Saturation Voltage DC Current Gain (BCY59A) DC Current Gain (BCY59B) DC Current Gain (BCY59C) Transition Frequency (f=100MHz) IC=10mA CCBO CEBO Collector-Base Capacitance (f=1MHz) Emitter-Base Capacitance (f=1MHz) IE=0 IC=0 VCB=10V VEB=0.5V NF Noise Figure IC=200A RS=2K VCE=5V 2 6 Turn-on Time (VCC=10V) IC=10mA f=1kHz IB1=1mA 85 150 IC=100mA IB1=10mA 55 150 IC=10mA, IB1= IB2=1mA 480 800 IC=100mA, IB1= IB2=10mA 480 800 toff Turn-off Time (VCC=10V) mV 220 fT ton mV MHz ns ns * Pulsed: Pulse Duration = 300s, duty cycle = 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5253 Issue 1