SSM6N15FU
2001-12-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FU
High Speed Switching Applications
Analog Switching Applications
· Small package
· Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta =
==
= 25°C) (Q1, Q2 Common)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage VGSS ±20 V
DC ID 100
Drain current
Pulse IDP 200
mA
Drain power dissipation (Ta = 25°C) PD (Note) 200 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C
Note: Total rating
Marking Equivalent Circuit (t op view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2J1C
Weight: 6.8 mg (typ.)
D P
6 5 4
1 2 3
Q1
Q2
6 5 4
1 2 3
SSM6N15FU
2001-12-05
2
Electrical Characteristics (Ta =
==
= 25°C) (Q1, Q2 Common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 ¾ ¾ ±1 mA
Drain-Source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 30 ¾ ¾ V
Drain cut-off current IDSS V
DS = 30 V, VGS = 0 ¾ ¾ 1 mA
Gate threshold voltage Vth V
DS = 3 V, ID = 0.1 mA 0.8 ¾ 1.5 V
Forward transfer admittance ïYfsï V
DS = 3 V, ID = 10 mA 25 ¾ ¾ mS
ID = 10 mA, VGS = 4 V ¾ 2.2 4.0
Drain-Source ON resistance RDS (ON)
ID = 10 mA, VGS = 2.5 V ¾ 4.0 7.0
W
Input capacitance Ciss ¾ 7.8 ¾ pF
Reverse transfer capacitance Crss ¾ 3.6 ¾ pF
Output capacitance Coss
VDS = 3 V, VGS = 0, f = 1 MHz
¾ 8.8 ¾ pF
Turn-on time ton ¾ 50 ¾
Switching time
Turn-off time toff
VDD = 5 V, ID = 10 mA,
VGS = 0~5 V ¾ 180 ¾
ns
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on
this product.
(c) VOUT
(b) VIN
ton
90%
10%
0 V
5 V
10%
90%
toff
tr tf
VDD
VDS
(
ON
)
VDD = 5 V
Duty
<
=
1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
Ta = 25°C
VDD
OUT
IN
5 V
0
10 ms
50 9
RL
(a) Test circuit
SSM6N15FU
2001-12-05
3
(Q1, Q2 Common)
0.01
0
1
1000
243 1
0.1
10
100
Ta = 100°C
Common
Source
VDS = 3 V
-25°C
25°C
4 V
VGS = 2.5 V
0
0
4
10
80 200160 40
2
6
8
120
Common Source
Ta = 25°C
0
0
2
6
4108 2
1
4
5
6
3
25°C
Ta = 100°C
-25°C
Common Source
ID = 10 mA
Drain-source on resistance
RDS (ON) (W)
Drain-source on resistance
RDS (ON) (W)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (mA)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (mA)
Drain current ID (mA)
RDS (ON) – ID
Drain-source on resistance
RDS (ON) (W)
Gate-source voltage VGS (V)
RDS (ON) – VGS
Ambient temperature Ta (°C)
RDS (ON) – Ta
Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
0
0
100
250
121.5 0.5
50
150
200
VGS = 2.1 V
2.3
2.5
2.7
Common Source
Ta = 25°C
3 4 10
0
-25
2
8
50 150125 0
1
5
6
75
4
4 V
VGS = 2.5 V
Common Source
ID = 10 mA
3
7
25 100
0
-25
0.4
2
50 150125 0
0.2
1.2
1.6
75
1
Common Source
ID = 0.1 mA
VDS = 3 V
0.8
1.8
25 100
0.6
1.4
SSM6N15FU
2001-12-05
4
(Q1, Q2 Common)
Capacitance C (pF)
Switching time t (ns)
Drain current ID (mA)
ïYfsï – ID
Forward transfer admittance
½Yfs½ (mS)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (mA)
Drain current ID (mA)
t – ID
Switching time t (ns)
Drain current ID (mA)
t – ID
Drain-source voltage VDS (V)
C – VDS
Ambient temperature Ta (°C)
PD* – Ta
Power dissipation PD* (mW)
1
0
10
30
1000
100
100010 100
3
5
50
300
500 Common Source
VDS = 3 V
Ta = 25°C
10
0.1
100
300
10000
1000
1001 10
30
50
500
3000
5000
Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C
tr
ton
t
f
toff
10
0.1
100
300
10000
1000
100110
30
50
500
3000
5000
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
tr
ton
tf
toff
0.1
0.1
1
3
100
10
1001 10
0.3
0.5
5
30
50
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Crss
Coss
Ciss
0
0
100
250
16040
50
150
200
20 60 80 100 140 120
*: Total rating
0
0
100
250
-1.4-0.4
50
150
200
-0.2 -0.6 -0.8 -1 -1.2
Common Source
VGS = 0 V
Ta = 25°C
G
D
S
IDR
SSM6N15FU
2001-12-05
5
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
