MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 3 1202 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC 2 TA = 25C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 A A -55 to +150 C 150 C TSTG TJ Parameter Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol PD RJA Parameter Value Units Power Dissipation 350 mW Thermal Resistance, Junction to Ambient 357 C/W (c) 2011 Fairchild Semiconductor Corporation MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 www.fairchildsemi.com 1 MMBD1201 / 1202 / 1203 / 1204 / 1205 -- Small Signal Diodes August 2011 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min. Max. Units 600 740 920 1.0 1.1 mV mV mV V V 25 50 5.0 nA nA A VR = 0, f = 1.0MHz 2.0 pF IF = IR = 10mA, IRR = 1.0mA RL = 100 4.0 ns VR Breakdown Voltage IR = 100A 100 VF Forward Voltage IF = 1.0mA IF = 10mA IF = 100mA IF = 200mA IF = 300mA 550 660 820 0.87 - V IR Reverse Leakage VR = 20V VR = 50V VR = 50V, TA = 150C CT Total Capacitance trr Reverse Recovery Time Typical Performance Characteristics 150 140 130 120 110 1 Ta= 25 C 300 Reverse Current, IR [nA] Reverse Voltage, V R [V] Ta= 25 C 2 3 5 10 20 30 50 250 200 150 100 50 0 100 Reverse Current, IR [uA] 10 Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA 30 50 70 100 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V Ta= 25 C Ta= 25 C 700 Forward Voltage, VF [mV] 450 Forward Voltage, VF [mV] 20 Reverse Voltage, V R [V] 400 350 300 650 600 550 500 250 1 2 3 5 10 20 30 50 450 100 Forward Current, IF [uA] 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA (c) 2011 Fairchild Semiconductor Corporation MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 0.1 www.fairchildsemi.com 2 MMBD1201 / 1202 / 1203 / 1204 / 1205 -- Small Signal Diodes Electrical Characteristics 1.3 Ta= 25 C Ta= 25 C Total Capacitance [pF] Forward Voltage, VF [V] 1.4 1.2 1.0 0.8 0.6 1.2 1.1 1.0 10 20 30 50 100 200 300 500 0 2 4 6 Forw ard C urrent, I F [m A ] Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA 10 12 14 Figure 6. Total Capacitance vs Reverse Voltage 400 4.0 Ta= 25 C 3.5 300 Current [mA] Reverse Recovery Time [nS] 8 R everse V oltage [V ] 3.0 2.5 2.0 IF 200 (AV ) -A V 100 ER AG ER EC T IF IE D 1.5 CU RR EN TmA 0 1.0 10 20 30 40 50 0 60 50 100 150 Ambient Temperature, T A [ C] Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) Power Dissipation, PD [mW ] 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 200 Average T em perature, I O [ C ] Figure 9. Power Derating Curve (c) 2011 Fairchild Semiconductor Corporation MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. 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