BAS116H,115 - NXP - Datasheet.Live

1. Product profile

1.1 General description

Low leakage switching diode, encapsulated in a SOD123F small and flat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Small and flat lead SMD plastic package

Low leakage current

Excellent coplanarity and improved thermal behavior

AEC-Q101 qualified

1.3 Applications

General-purpose switching

1.4 Quick reference data

[1] Pulse test: tp300 s; 0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

2. Pinning information

[1] The marking bar indicates the cathode.

BAS116H

Low leakage switching diode

Rev. 3 — 31 May 2011 Product data sheet

SOD123F

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current [1][2] --215mA

IRreverse current VR= 75 V - 0.003 5.0 nA

VRreverse voltage - - 75 V

trr reverse recovery time [3] -0.83.0s

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode

sym001

Product data sheet Rev. 3 — 31 May 2011 2 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

3. Ordering information

4. Marking

5. Limiting values

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Pulse test: tp300 s; 0.02.

[3] Tj=25C prior to surge.

[4] Reflow soldering is the only recommended soldering method.

[5] Soldering point of cathode tab.

Tabl e 3. Ordering information

Type number Package

Name Description Version

BAS116H - plastic surface-mounted package; 2 leads SOD123F

Table 4. Marking codes

Type number Marking code

BAS116H B1

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse

voltage -85V

VRreverse voltage - 75 V

IFforward current [1][2] -215mA

IFRM repetitive peak forward

current -500mA

IFSM non-repetitive peak forward

current square wave [3]

tp=1s-4A

tp=1ms - 1 A

tp=1s - 0.5 A

Ptot total power dissipation Tamb 25 C[1][4]

[5] -375mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 3 — 31 May 2011 3 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Soldering point of cathode tab.

7. Characteristics

[1] Pulse test: tp300 s; 0.02.

[2] When switched from IF= 10 mA to IR=10mA; R

L= 100 ; measured at IR=1mA.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2] --330K/W

Rth(j-sp) ther mal resistance from

junction to solder point [3] --70K/W

Table 7. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage [1]

IF= 1 mA - - 0.90 V

IF=10mA - - 1.00 V

IF=50mA - - 1.10 V

IF= 150 mA - - 1.25 V

IRreverse current VR= 75 V - 0.003 5.0 nA

VR=75V; T

j= 150 C- 3 80.0nA

Cddiode capacitance VR=0V; f=1MHz -2-pF

trr reverse recovery time [2] -0.83.0s

Product data sheet Rev. 3 — 31 May 2011 4 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

(1) Tamb = 150 C; typical values

(2) Tamb =25C; typical values

(3) Tamb =25C; maximum values

Based on square wave currents

Tj=25C; prior to surge

Fig 1. Forward current as a function of forward

voltage Fig 2. Non-repetitive p eak forward current as a

function of pulse duration; maximum values

VR=75V

(1) Maximum values

(2) Typical values

Tamb =25C; f = 1 MHz

Fig 3. Reverse current as a function of junction

temperature Fig 4. Diode capacitance as a function of reverse

voltage; typical values

mlb752

300

100

200

(mA)

0 1.60.8 1.20.4 VF (V)

(1) (2) (3)

mbg704

102

IFSM

(A)

10−1

tp (μs)

110

103

10 102

102

150 200

500

mlb754

100

10−1

10−2

10−3

(nA)

Tj (°C)

(1)

(2)

mbg526

01020155 VR (V)

(pF)

Product data sheet Rev. 3 — 31 May 2011 5 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

(1) IR=1mA

Fig 5. Reverse recovery time test cir cuit and waveforms

trr

(1)

+ IFt

output signal

trtpt

10 %

90 %

input signal

V = VR + IF × RS

RS = 50

D.U.T.

Ri = 50

SAMPLING

OSCILLOSCOPE

mga881

Fig 6. Package outline SOD123F

04-11-29Dimensions in mm

1.2

1.0

0.25

0.10

3.6

3.4 2.7

2.5

0.55

0.35

0.70

0.55

1.7

1.5

Table 8. Packing methods

The -xxx numbers are the last three digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BAS116H SOD123F 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 3 — 31 May 2011 6 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 7. Reflow soldering foot print SOD123F

Footprint information for reflow soldering of plastic surface-mounted, 2 leads package SOD123F

sod123f_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

2.9

2.8

4.4

1.62.1 1.2

(2×)

1.1

(2×)

1.1

(2×)

1.2

(2×)

Dimensions in mm

Product data sheet Rev. 3 — 31 May 2011 7 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAS116H v.3 20110531 Product data sheet - BAS116H v.2

Modifications: •Section 1 “Product profile”: updated.

•Table 5 and 6: updated.

•Table 7: VF values changed from mV to V.

•Figure 2: updated.

•Section 8.1 “Quality information”: added.

•Figure 7: updated.

•Section 13 “Legal information”: updated.

BAS116H v.2 20091214 Product data sheet - BAS116H v.1

BAS116H v.1 20050411 Product data sheet - -

Product data sheet Rev. 3 — 31 May 2011 8 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, th e

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

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representations or warrant ies, expressed or implied, as to the accuracy or

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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construed as an of fer t o sell product s that is open for accept ance or the gr ant,

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other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 31 May 2011 9 of 10

NXP Semiconductors BAS116H

Low leakage switching diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to : salesaddresses@nxp.com

NXP Semiconductors BAS116H

Low leakage switching diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 31 May 2011

Document identifier: BAS116 H

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Packing information . . . . . . . . . . . . . . . . . . . . . 5

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10