PBSS4130T,215 - NXP - Datasheet.Live

DATA SH EET

Product speciﬁcation 2003 Nov 27

DISCRETE SEMICONDUCTORS

PBSS4130T

30 V, 1 A

NPN low VCEsat (BISS) transistor

M3D088

2003 Nov 27 2

Philips Semiconductors Product speciﬁcation

30 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4130T

FEATURES

•Low collector-emitter saturation voltage VCEsat

•High collector current capability IC and ICM

•High efficiency leading to less heat generation

•Reduced printed-circuit board requirements

•Cost effective alternative to MOSFETs in specific

applications.

APPLICATIONS

•Power management

– DC/DC conversion

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral driver

– Driver in low supply voltage applications (e.g. lamps

and LEDs)

– Inductive load drivers (e.g. relays, buzzers and

motors).

DESCRIPTION

NPNBISStransistorinaSOT23plasticpackageproviding

ultra low VCEsat and RCEsat parameters.

PNP complement: PBSS5130T.

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS4130T *3C

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 30 V

ICcollector current (DC) 1 A

ICM peak collector current 3 A

RCEsat equivalent on-resistance 220 mΩ

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4130T −plastic surface mounted package; 3 leads SOT23

2003 Nov 27 3

Philips Semiconductors Product speciﬁcation

30 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4130T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −40 V

VCEO collector-emitter voltage open base −30 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −1A

CM peak collector current −3A

BM peak base current −300 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −300 mW

Tamb ≤25 °C; note 2 −480 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 417 K/W

in free air; note 2 260 K/W

2003 Nov 27 4

Philips Semiconductors Product speciﬁcation

30 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4130T

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =30V; I

E=0 −−100 nA

VCB =30V; I

E= 0; Tj= 150 °C−−50 µA

IEBO emitter-base cut-off current VEB =4V; I

C=0 −−100 nA

hFE DC current gain VCE =2V; I

C= 100 mA 350 470 −

VCE =2V; I

C= 500 mA 300 450 −

VCE =2V; I

C= 1 A 300 420 −

VCEsat collector-emitter saturation voltage IC= 100 mA; IB=1mA −−90 mV

IC= 500 mA; IB=50mA −−120 mV

IC= 750 mA; IB=15mA −−220 mV

IC= 1 A; IB= 50 mA; note 1 −−270 mV

RCEsat equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 −−240 mΩ

VBEsat base-emitter saturation voltage IC= 1 A; IB= 100 mA; note 1 −−1.1 V

VBEon base-emitter turn-on voltage VCE =2V; I

C= 100 mA −−0.75 V

fTtransition frequency IC= 100 mA; VCE =10V;

f = 100 MHz 100 −−MHz

Cccollector capacitance VCB =10V; I

E=I

e= 0; f = 1 MHz −−20 pF

2003 Nov 27 5

Philips Semiconductors Product speciﬁcation

30 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4130T

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

2003 Nov 27 6

Philips Semiconductors Product speciﬁcation

30 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4130T

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabove those given inthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarranty thatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingthese products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

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right infringement, unless otherwise specified.

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Contact information

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Printed in The Netherlands R75/01/pp7 Date of release: 2003 Nov 27 Document order number: 9397 750 11897