Description
The A8511 is a multioutput WLED/RGB driver for backlight-
ing medium-size displays. It is a fully integrated high-brightness
(HB) LED driver solution that does not require external power
devices to complete the backlighting design criteria. The A8511
integrates FETs for a boost converter as well as four 150 mA
current sinks, offering a complete integrated solution at HB
LED current levels. LED channels can be tied together for up to
600 mA sink capability. It can work from a single power supply
of 6.8 to 21 V and withstand up to 40 V. The boost converter
is a constant frequency, current-mode converter.
Operating frequency can be set to 2 MHz avoiding interference
with the AM radio band. The integrated boost DMOS switch is
rated for 40 V at 3.6 A. PWM dimming allows LED currents
to be controlled up to a 1000:1 ratio. Additional 4:1 dimming
can be achieved by using the DIM pin.
The A8511 provides protection against output connector shorts
through an integrated output disconnect switch. An optional
external thermistor can be used to limit LED current based on
panel temperature.
The device is supplied in a surface mount, 28-pin TSSOP
package (suffix LP), with exposed thermal pad for enhanced
thermal dissipation. It is lead (Pb) free, with 100% matte-tin
leadframe plating.
Applications include:
GPS navigation systems
Automotive infotainment
Back-up camera displays
Cluster backlighting
Portable DVD players
Industrial LCD displays
8511-DS
Features and Benefits
Four LED sinks rated for 150 mA each (600 mA total)
Boost converter with integrated 40 V DMOS switch and
OVP–load-dump protection
600 kHz to 2.2 MHz switching frequency—ability to
operate above the AM band
Internal bias supply for single-supply operation (VIN= 6.8 to 21 V)
3.5 A shutdown current—limits battery drain
Active current sharing between LED strings for
0.8% current matching and 0.7% accuracy
PWM dimming with LED PWM duty cycle control
4000:1 dimming range
Extensive fault mode protection schemes:
Shorted LED protection against misconnected loads—
with true output disconnect
Open LED disconnect protects against LED failures
External thermistor sensing to limit LED temperature
Output overvoltage protection (OVP): 19.5 V default can
be adjusted as high as 38 V
Open Schottky and open OVP resistor protection against
external component failure
Input under- and overvoltage protection (UVLO and
OVLO) against VIN variation
Boost current limit, output short circuit limit,
overtemperature protection (OTP), and soft start
2 MHz, 4 Channel × 150 mA WLED/RGB Driver
with Output Disconnect
Package:
Typical Application
Not to scale
A8511
FSET
NC
PAD
VTO
VTI
COMP
ISET
RISET
RVC
NTC
Optional Configuration
for Thermal Derating
–t°
D1
L1
10 μH
RFSET
VIN SW SWSW OVP CAP
OUT
ROVP
78.7 kΩ
25.5 kΩ
24.3 kΩ
VBAT
A8511
A8511
LED4
LED3
LED2
LED1
DIM
EN
SEL1
SEL2
BIAS
CCOMP
1 μF
10 V
COUT
4.7 μF
50 V
CIN
CBAT
4.7 μF
35 V
CBIAS
0.1 μF
10 V
VTO
VTI
DGNDLGNDAGND PGND PGNDPGND
28-pin TSSOP with
exposed thermal pad
(package LP)
Figure 1. LCD monitor backlight driving
4 LED strings. On/off and dimming
control using ENABLE pin.
• Current = 50 mA per string
• OVP = 35 V nominal
• Switching frequency = 2 MHz
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
2
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Absolute Maximum Ratings*
Characteristic Symbol Notes Rating Units
SW, OVP, CAP, OUT Pins –0.3 to 40 V
LED1 through LED4 Pins –0.3 to 21 V
VIN Pin VIN
Steady state –0.3 to 34 V
Transient < 1 s 40 V
DIM Pin VDIM –0.3 to 6 V
Remaining Pins –0.3 to 7 V
Operating Ambient Temperature TA
Range G –40 to 105 ºC
Range K –40 to 125 ºC
Maximum Junction Temperature TJ(max) 150 ºC
Storage Temperature Tstg –55 to 150 ºC
*Stresses beyond those listed in this table may cause permanent damage to the device. The absolute maximum ratings are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics table
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Thermal Characteristics
Characteristic Symbol Test Conditions* Value Units
Package Thermal Resistance RθJA 4-layer PCB based on JEDEC standard 28 ºC/W
*Additional thermal information available on Allegro website.
Selection Guide
Part Number Operating Ambient Tem-
perature Range, TAPacking
A8511GLPTR-T –40°C to 105°C Contact factory
A8511KLPTR-T –40°C to 125°C 4000 pieces per 13-in. reel
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
3
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
PGND PGNDPGNDAGND
BIAS
LED1
Open LED Detect
and Disconnect
Shorted LED Detect
LED3
DGNDLGND
COMP
VIN SW
OUT
LED4
LED2
SEL1
SEL2
EN
VTO
VTI
ISET
OVP Fault
References
100 kΩ
100 kΩ
Device
Control
Internal
Supply
Feedback
Control
Charge
Pump
Overcurrent
Comparators
Overvoltage
Comparators
Boost
Regulator
Bias Supply
+
PGND
Current Sinks
LED Current
Reference
+
Minimum
Select
2.46 V 1.23 V
DIM
FSET OSC
SW SW OVP CAP
÷2
÷4
PAD
Functional Block Diagram
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
4
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Pin-out Diagram
BIAS
DGND
DIM
SW
SW
SW
OVP
CAP
AGND
ISET
VTI
VTO
LED1
LED2
EN
SEL2
SEL1
PGND
PGND
PGND
NC
VIN
COMP
FSET
OUT
LED4
LED3
LGND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
PAD
Terminal List Table
Number Name Function
1 BIAS Output of internal 6 V bias supply. Decouple with a 0.1 μF ceramic capacitor to DGND.
2 DGND Digital signal ground. Connect AGND, DGND, LGND, PGND, and PAD using star ground connection.
3 DIM Sets ILED by adjusting the ISET to ILEDx current gain, AISET . When DIM = VIL , AISET = 960 and when DIM=VIH , AISET = 240.
4, 5, 6 SW DMOS switch drain node. Tie these three pins together on the PCB.
7 OVP To enable overvoltage protection, connect this pin through a resistor to the CAP pin. The default OVP level, with 0 Ω resistor,
is 19.5 V. External resistor can set OVP up to 38 V.
8 CAP Input connection for output disconnect switch.
9 AGND Analog signal ground. Connect AGND, DGND, LGND, PGND, and PAD using star ground connection.
10 ISET Sets the 100% current level through LED strings. Set by value of RISET connected between ISET and AGND.
11 VTI
ISET voltage override. Sets the ISET voltage when VTI < 1.23 V. Tie directly to VTO pin to disable this feature. This pin can
be used for LED current thermal derating or external analog LED current control. See the Typical Application Circuits section
for additional information.
12 VTO 2.46 V output voltage. Use this voltage to bias an external NTC resistor or as a DAC reference. This pin can be used as a
logic high signal for the SEL and DIM pins.
13,14,16,17 LEDX LED current sinks.
15 LGND Power ground for LED current sinks. Connect AGND, DGND, LGND, PGND, and PAD using star ground connection.
18 OUT Output connection for output disconnect switch. Connect LED common connection to this pin.
19 FSET Connect RFSET between FSET and AGND to set boost switching frequency.
20 COMP Sets boost loop compensation. Connect external compensation capacitor between COMP and AGND for boost converter stability.
21 VIN Input supply for the device. Decouple with a 0.1 μF ceramic capacitor.
22 NC Not connected internally. It is recommended to connect this pin to external ground.
23, 24, 25 PGND Power ground. Connect AGND, DGND, LGND, PGND, and PAD using star ground connection.
26 SEL1 SEL1 and SEL2 together select which LED strings are enabled. See Functional Description section.
27 SEL2
28 EN Enable and PWM LED current control. Apply logic-level PWM for PWM-controlled dimming mode.
–PAD
Exposed thermal pad. Connect AGND, DGND, LGND, PGND, and PAD using star ground connection. Connect to PCB
copper layer for enhanced heat dissipation.
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
5
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
ELECTRICAL CHARACTERISTICS Valid using circuit shown in figure 1; VIN = 12 V, EN = SEL1 = SEL2 =5 V, RISET = 7.87 kΩ,
RFSET = 24.3 kΩ, VTO shorted to VTI guaranteed over the full operating temperature range with TA =TJ
, typical specifications are at
TA = 25ºC; unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
General
Input Voltage Range VIN 8 21 V
Undervoltage Lockout Threshold VUVLO(th) VIN falling 5.7 6.5 6.8 V
UVLO Hysteresis Window VUVLO(hys) 0.21 0.55 0.81 V
Overvoltage Lockout Threshold VOVLO(th) VIN rising 29 32 34 V
Supply Current IS
2 MHz switching at no load 4 11 15 mA
EN = VIL, in shutdown, TA = 25°C,
CAP = VIN = SW = OVP = 16 V
IS = IVIN + ISW + ICAP + IOVP
3.5 6 μA
EN = VIL, in shutdown, TA = –40°C to 125°C,
CAP = VIN = SW = OVP = 16 V,
IS = IVIN + ISW + ICAP + IOVP
3.5 10 μA
EN = VIL, not in shutdown, IS = IVIN –24mA
Logic Input levels (DIM, EN, SELx Pins)
Input Voltage Level-Low VIL 0.4 V
Input Voltage Level-High VIH 1.5 V
Input Leakage Current (EN, DIM pins) Ilkg1 VDIM, VEN = 5 V 30 50 70 μA
Input Leakage Current (SELx pins) Ilkg2 VSELx = 5 V 1 μA
Overvoltage Protection
Output Overvoltage Threshold VOVP(th) OVP pin connected to OUT pin 18 19.5 21 V
OVP Sense Current IOVPH 183 200 217 μA
OVP Leakage Current IOVP(lkg) VOVP = 18 V, EN = VIL, in shutdown 0.1 1 μA
Boost Switch
Switch On Resistance RSWDS(on) ISW = 2 A 40 100 300 mΩ
Switch Leakage Current ISW(lkg) VSW = 21 V 0.1 10 μA
Switch Current Limit ISW(lim) 3 3.6 5.3 A
LED Current Sinks
LEDx Regulation Voltage VLED VLED1 = VLED2 = VLED3 = VLED4 850 1100 mV
IISET to ILEDx Current Gain AISET
IISET = 156 μA, DIM = VIL 915 963 1011 A/A
IISET = 156 μA, DIM= VIH 229 242 255 A/A
ISET Pin Voltage VISET 1.13 1.23 1.33 V
VTO Pin Voltage VTO IVTO = 1 mA 2.00 2.46 2.65 V
VTO Pin Current Maximum ITO(max) IVTO increased until VTO drops by 1% 1.5 2.4 5 mA
VTI Pin Voltage
VTI(falling)
VTI start >1.34 V, VTI pin voltage decreasing
before control changes to VTI pin 1.00 1.12 1.23 V
VTI(rising)
VTI start <1 V VTI pin increasing before
changing to internal reference 1.13 1.235 1.34 V
Continued on the next page…
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
6
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
ELECTRICAL CHARACTERISTICS (continued) Valid using circuit shown in figure 1; VIN = 12 V, EN = SEL1 = SEL2 =5 V, RISET = 7.87 kΩ,
RFSET = 24.3 kΩ, VTO shorted to VTI, guaranteed over the full operating temperature range with TA =TJ
, typical specifications are at
TA = 25ºC; unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
ISET Pin Allowable Current Range IISET 20 166 μA
LEDx Accuracy1ErrLED
RISET = 10 kΩ. 100% current ratio, measured
as the average of VLEDx , for LED1 through
LED4, with VLEDx = 0.85 V, TA =TJ = 0 to 125°C
0.7 3 %
LEDx Matching2LEDx
IISET = 125 μA, 100% current ratio, with
VLEDx = 0.85 V 0.8 3 %
LED Switch Leakage Current IS(lkg) VLEDx = 17.5 V, EN = VIL = 0 V 4.8 8.75 12.8 μA
LEDx Short Detect Voltage Threshold VLEDSC On any LEDx pin, forces latched shutdown 17.5 19 21 V
Output Disconnect Switch
On-Resistance RODS(on) VIN = 8 V, IOUT = 400 mA, TJ = 125°C 2 4 Ω
Oscillator
FSET Pin Voltage VFSET RFSET = 24.3 kΩ1.14 1.235 1.33 V
Frequency fOSC
RFSET = 24.3 kΩ1.8 2.1 2.4 MHz
RFSET = 51.1 kΩ0.850 1 1.285 MHz
RFSET = 84.5 kΩ0.5 0.6 0.8 MHz
Minimum Switch Off-Time toff(min) 60 110 ns
Minimum Switch On-Time ton(min) 60 110 ns
Soft Start
Soft Start Boost Current Limit ISWSS(lim) Initial soft start current for boost switch 0.4 0.6 0.75 A
Soft Start LEDx Current ILEDSS
Current through each enabled LEDx pin during
soft start, RISET = 7.87 kΩ4 7.5 12 mA
PWM Timing on EN pin
Maximum PWM Dimming Off-Time tPWML
Measured while EN = low, during dimming
control, and internal references are powered on
(exceeding tPWML results in shutdown)
131,072 fSW cycles
Minimum PWM On-Time tPWMH ––6 μs
PWM High to LED On Delay tdPWM(on)
Time between PWM enable and when LED
current reaches 90% of maximum, with internal
references enabled and tPWML not exceeded
–3– μs
PWM Low to LED Off Delay tdPWM(off)
Time between EN going low and when LED
current reaches 10% of maximum, with internal
references enabled and tPWML not exceeded
0.5 μs
Thermal Shutdown Threshold3TTSD Device temperature rising 150 172 195 °C
Thermal Shutdown Hysteresis3TTSD(hys) 15 20 25 °C
1LED accuracy is defined as (IISET × 960 – ILED(av)) / (IISET × 960), ILED(av) measured as the average of ILED1 through ILED4.
2LED current matching is defined as (ILEDx – ILED(av)) / ILED(av), with ILED(av) as defined in footnote 1.
3Guaranteed by design and characterization, functional tested in production.
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
7
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Performance Characteristics
Electrostatic Discharge Structures
Equivalent ESD on Pins
60 V
VIN
VBIAS
VIN / VBIAS
7 V
DGND
6 V 100 kΩ
DIM
DIM
DGND
35 V
VIN
FSET
VIN / FSET
10 V
DGND
23 V
LEDx
LEDx
DGND
40 V 40 V
CAP
CAP / OUT
OUT
DGND
40 to 60 V
SW
SW
DGND
xGND
AGND, LGND, PGND, and DGND
DGND
DGND
PGND
12 V
6 V
ISET
12 V
12 V
12 V
12 V
12 V
VTO
VTI
ISET, VTO, and VTI
SEL1, SEL2, and EN
DGND
6 V
SEL1
SEL2
EN
44 V
OVP
OVP
7 V
COMP
COMP
DGND
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
8
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Symbol Parameter Units/Division
C1 VBAT 5 V
C2 VOUT 20 V
C3 IOUT 500 mA
C4 IBAT 500 mA
t time 20 ms
Performance Characteristics
PWM Waveforms
VBAT
= 12 V, IOUT
= 400 mA, fPWM
= 200 Hz
4 channels enabled, 6 LEDs each channel
50% PWM Duty Cycle (Startup)
1% PWM Duty Cycle (Startup)
VPWM
IOUT
VOUT
IBAT
t
VPWM
IOUT
VOUT
IBAT
t
Symbol Parameter Units/Division
C1 VPWM 5 V
C2 VOUT 20 V
C3 IOUT 500 mA
C4 IBAT 500 mA
t time 100 ms
C3
C3
C4
C4
C2
C2
C1
C1
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
9
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Soft Start Turn On Using Rising VBAT
VBAT = 12 V, IOUT
= 400 mA
4 channels enabled, 6 series LEDs each
Symbol Parameter Units/Division
C1 VBAT 10 V
C2 IBAT 500 mA
C3 VOUT 20 V
C4 IOUT 500 mA
t time 5 ms
VBAT
C4
C2
C3
C1
IOUT
VOUT
IBAT
t
A. VBAT voltage slowly increased with EN held high.
A–B. Input bulk capacitor CBAT and boost output capacitor COUT are charged to
VUVLO .
B. VBAT reaches VUVLO, and enables A8511 through soft start.
B–C. During soft start period, boost switch peak current is limited to 600 mA and
LED current to 1/20 of desired level. Narrow current spike at B is due to
parasitic capacitance from OUT to ground and CBIAS. COMP pin is help low
during soft start.
D. After VOUT reaches a level such that all LED pins > 0.75 V, the A8511
comes out of soft start.
C–E. After initial rise of VOUT
, the capacitor CCOMP starts charging slowly (CCOMP
not shown).
E. VCOMP reaches desired level for stable operation.
F. A8511 and LEDs reach thermal steady state.
A
A
B
B
C
C
D
D
E
E
F
F
Turn On Using EN Pin
VBAT = 8 V, IOUT = 400 mA
4 channels enabled, 6 series LEDs each
Symbol Parameter Units/Division
C1 VBAT 5 V
C2 VOUT 20 V
C3 IOUT 500 mA
C4 IBAT 500 mA
t time 2 ms
VEN
C3
C4
C2
C1
IOUT
VOUT
IBAT
t
Performance Characteristics
Startup Waveforms
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
10
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Performance Characteristics
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.5
0 102030405060708090100
PWM Duty Cycle (%)
Error (%)
Error (%)
Corrected Error (%)
with 2.5 μs turn-on delay
-6
-5
-4
-3
-2
-1
0
0 102030405060708090100
PWM Duty Cycle (%)
Error (%)
Error (%)
Corrected Error (%)
with 2.5 μs turn-on delay
150
125
100
75
50
25
0
0 20406080100
PWM Duty Cycle (%)
I
LED
(mA)
100 Hz
200 Hz
80
81
82
83
84
85
86
87
88
89
90
0 102030405060708090100
PWM Duty Cycle (%)
Efficiency (%)
200 Hz
100 Hz
PWM
PWM
The LED Current Error graph shows the effect of PWM duty cycles on LED current error, according to the relationship:
Error (%) = (IISET × 960 x PWM Duty cycle – ILED(av)) / (IISET × 960 x PWM Duty cycle) .
At lower PWM duty cycles, turn-on delay adversely affects LED current accuracy. This accuracy can be improved by extending the applied PWM signal
by 2.5 μs. For example, at 100 Hz PWM and 1% PWM duty cycle, the on-time would be 100 μs. The effects of that turn-on delay could be offset by
applying a 102.5 μs PWM pulse.
LED Current Error at 100 Hz PWM LED Current Error at 200 Hz PWM
LED Current versus PWM Duty Cycle Efficiency versus PWM Duty Cycle
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
11
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
All four LED strings disconnected simultaneously. VOUT increases to OVP
level, and all LED strings are removed from regulation.
Symbol Parameter Units/Division
C1 VBAT 10 V
C2 VOUT 20 V
C3 VLED1 1 V
C4 IOUT 500 mA
t time 100 μs
VBAT
VOUT
VLED1
IOUT
t
C3
C4
C2
C1
Symbol Parameter Units/Division
C1 VBAT 10 V
C2 VOUT 20 V
C3 VLED1 1 V
C4 IOUT 500 mA
t time 100 μs
LED string #1 disconnected. VOUT increases to OVP level, and LED string #1 is
removed from regulation. The rest of the LED strings continue to function normally.
VBAT
VOUT
VLED1
IOUT
t
C3
C4
C2
C1
Performance Characteristics
Output LED Open Protection
VBAT
= 12 V, ILED
= 100 mA per LED string, EN = high
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
12
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Performance Characteristics
ISET Characterization
LED Current versus RISET
ILED (mA)
RISET (kΩ)
020305010 40 60 70
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
13
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Case temperature rise testing was performed on the
standard A8511 evaluation board (figure at right). This is
a 4-layer board composed of standard FR4 material.
Thermal Dissipation Characterization
0.40 0.45 0.50 0.55 0.60
Current, I
OUT
(A) Current, I
OUT
(A)
Package Case Temperature Rise versus Total Output Current
V
IN
= 12 V, V
OUT
= 20 V
30
35
40
45
50
60
65
30
35
40
45
50
5555
60
65
0.40 0.45 0.50 0.55 0.60
Temperature Rise (°C)
Temperature Rise (°C)
Package Case Temperature Rise versus Total Output Current
V
IN
= 12 V, V
OUT
= 25 V
Performance Characteristics
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
14
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Disconnect Switch Overcurrent Fault Timing Diagram
A B C D E F G
A B C D E F G
t
t
t
t
t
VEN
VSW
IOUT
VCOMP
VCAP 30 V
5 V
1.35
A
30 V
5 V
VOUT
A. Overcurrent on disconnect switch is detected and disconnect
switch latches off. Boost is turned off when >3 V is detected
across the disconnect switch. LEDs stop sinking current
because there is insufficient voltage across them.
B. COMP pin reaches lockout level. LEDs are internally turned
off and the COMP pin is discharged.
C. COMP pin reaches ground voltage, LEDs are internally turned
on, in soft start mode, and boost is put into soft start mode.
Boost and LEDs remain off because VOUT is still at ground
potential due to the disconnect switch being latched off.
D. User turns off EN.
E. The A8511 shuts down when EN is off for more than 131,072
clock cycles. If any other fault conditions were present prior
to shutdown, such as: open LED, TSD, shorted LED, or
secondary OVP, these are now cleared and the part is ready
to be re-enabled.
F. User re-enables operation. A8511 enters soft start mode.
G. Soft start mode finished.
Performance Characteristics
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
15
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Performance Characteristics
Fault Protection
VBAT
= 12 V, ILED
= 100 mA per string
4 channels enabled, 8 series LEDs each
VOUT to LED1 Short
Symbol Parameter Units/Division
C1 IOUT 200 mA
C2 VCAP 5 V
C3 VOUT 5 V
t time 1 μs
VCAP
C3
C2
C1
IOUT
VOUT
t
VOUT to Ground Short
VCAP
C3
C2
C1
IOUT
VOUT
t
Open Schottky Diode Disconnect
Symbol Parameter Units/Division
C1 IOUT 200 mA
C2 VSW 10 V
C3 VOUT 5 V
t time 20 μs
C3
C2
C1
IOUT
t
Symbol Parameter Units/Division
C1 IOUT 1 A
C2 VCAP 5 V
C3 VOUT 5 V
t time 2 μs
VSW
VOUT
(LED Short Detect activated, causing a latched shutdown)
(Output Disconnect Switch opens to prevent any damage)
(Secondary OVP activated, causing a latched shutdown)
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
16
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Functional Description
Description
The A8511 is a multioutput WLED/RGB driver for display back-
lighting. It uses a current mode boost converter which operates
at a constant frequency. The boost switching frequency can be
set from 600 kHz to 2.2 MHz by an external resistor connected
across FSET and AGND. The integrated boost DMOS switch is
rated for 40 V at 3.6 A. This switch is protected against overvolt-
age, and provides pulse-by-pulse current limiting independently
of boost converter duty cycle.
The A8511 has 4 well-matched current sinks, which provide
regulated current through the load LEDs for uniform display
brightness. All LEDx sinks are rated for 21 V to allow PWM
dimming control.
Frequency Selection The switching frequency on the SW
pin, fSW
, can be set by applying the following equation:
f
SW = 51 / RFSET , (1)
where fSW is in MHz, and RFSET is in k.
LED Selection Which LED strings are enabled is determined
by the combined settings of the SEL1 and SEL2 pins, according
to the following table:
LED Channel Selection
SEL1 Pin SEL2 Pin Enabled LEDx Outputs
Low Low Only LED1
High Low LED1 and LED2
Low High LED1, LED2, and LED3
High High All channels
LED strings that are connected to the A8511, but are not enabled
through the SELx pins, may cause a shutdown if the voltage on
the corresponding LEDx pins exceeds VLEDSC . Refer to the LED
Short Detect section for further details. Unused LEDx pins can be
left open or connected to ground.
Use matched forward voltage LEDs for better efficiency.
The application circuit shown in figure 1 is a boost converter
and the output voltage is always higher than the battery volt-
age. Therefore, the quantity of LEDs per string should be such
that the required output voltage is higher than the maximum
battery voltage. If the battery voltage is higher than the output
voltage, the A8511 will switch with minimum pulse width, and
the actual output voltage will be higher than the required volt-
age. The excess voltage will be dropped across the LED strings.
This lowers efficiency and increases power dissipation, resulting
in higher device temperature. If battery voltage must be higher
than required output voltage, use a SEPIC converter, as shown in
figure 9.
Soft-Start and Compensation
At startup, the output capacitor is discharged and the A8511
enters soft start. The boost current is limited to 0.6 A and all
active LEDx pins sink 1/20 of the set current until all the enabled
LEDx pins reach 0.75 V. When the A8511 comes out of soft
start, the boost current and the LEDx pin currents are set to
normal. The output capacitor charges to voltage required to sup-
ply full LEDx currents within a few cycles. Once VOUT reaches
the required level, LEDx current toggles between 0 and 100%
in response to PWM signals. Soft start behavior on evaluation
boards is shown in the Performance Characteristics section.
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
17
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
LED Current Setting
The maximum LED current can be up to 150 mA per chan-
nel, and is set through the ISET pin. Connect a resistor, RISET,
between this pin and AGND to set the reference current level,
IISET , according to the following formula:
I
ISET = 1.235 / RISET , (2)
where IISET is in mA and RISET is in k.
This current is multiplied internally with a gain of 960, and mir-
rored on all enabled LED pins. This sets the maximum current
through the LEDs, referred as the 100% current.
Dimming The LED current can be reduced from the 100% cur-
rent level by three alternative dimming methods:
• PWM dimming using the EN pin. PWM dimming is performed
by applying an external PWM signal on the EN pin. When
the EN pin is pulled high, the A8511 turns on and all enabled
LEDs sink 100% current. The sequence is shown in figure 2.
For optimal accuracy, the external PWM signal should be in the
range 100 to 300 Hz. The slight delay between PWM signal and
the LED current causes an error. To compensate for the error,
a small turn-on delay should be added to the PWM signal as
shown on page 10 of the Performance Characteristics section.
When EN is pulled low, the boost converter and LED sinks are
turned off. The compensation (COMP) pin is floated, and criti-
cal internal circuits are kept active. If EN is pulled low for more
than tPWML , the device enters shutdown mode and clears all
internal fault registers. As an example, for a 2 MHz clock, the
maximum PWM low period while avoiding shutdown is 65 ms.
• Analog dimming using the DIM pin. When the DIM pin is
pulled low, the LED sinks draw 100 % current; when the pin is
pulled high, the LED current level drops to 25%.
• Analog dimming using the VTI pin. External DC voltage can be
applied to the VTI pin to control LED current. LED current var-
ies as a function of voltage on the VTI pin. This configuration is
shown in figure 5.
LED Open Detect When any LED string opens, the boost
circuit increases the output voltage until it reaches the overvolt-
age protection level. The OVP event causes any LED string that
is not in regulation to be locked-out from regulating the loop. By
removing the open LED from controlling the boost, the output
voltage returns to normal operating voltage. Every OVP event
retests all LED strings. An EN low signal does not reset the LED
string regulation lock unless it shuts down the device (exceeds
tPWML). The locked-out LED pins always attempt to sink desired
current regardless of lock-out state.
LED Short Detect Any LED pin that has a voltage exceed-
ing VLEDSC will force the device to disable the boost circuit and
LEDx outputs until EN shuts down the A8511 (EN low exceeds
tPWML). This protects the LEDx pins from potentially hazardous
voltages when multiple LEDs are shorted in one string.
Overvoltage Protection The A8511 has overvoltage protec-
tion (OVP) and open Schottky diode protection.
The OVP has a default level of 19.5 V and can be increased up to
38 V by the selection of an external resistor, as shown in figure 3.
When the current though OVP pin exceeds 200 A, the OVP
comparator goes low. When VOUT falls and current through the
OVP pin drops below 165 A, the OVP is released.
1.23 V
18 V
SW SW
OVP
ROVP
D1 VOUT
VBATT
COUT
A8511
OVP
Disable
SW
+
1.23 V
+
Latch
Figure 3. Overvoltage protection (OVP) circuitFigure 2. Timing diagram of external PWM signal and LED current
0 mA
External PWM Signal
EN
I
LEDX
Turn-on delay
100% Current
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
18
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
The following equation can be used to determine the resistance
for setting the OVP level:
R
OVP = (VOVP – 19.5) / 200 A , (3)
where VOVP is the target typical OVP level, and ROVP is the value
of the external resistor, in .
A8511 has secondary overvoltage protection to protect internal
switches in the event of an open diode condition. Open Schottky
diode detection is implemented by detecting overvoltage on the
SW pin. If voltage on the SW pin exceeds the device safe operat-
ing voltage rating, the A8511 disables and remains latched. The
IC must shut down before it can be reenabled.
Overcurrent Protection The boost switch is protected with
pulse-by-pulse current limiting at 3.6 A. The output disconnect
switch protects against output overcurrent. At 1.35 A typical, the
A8511 disables. This process is detailed in the Disconnect Switch
Overcurrent Fault Timing diagram in the Performance Character-
istics section, page 14.
In some instances, when the LEDs are connected by long wires
and also some output capacitance (such as ESD capacitors) is
present, a clamping diode on the output must be used. This diode
will prevent the output from momentarily going negative during
a short circuit condition. The diode must be chosen such that its
reverse breakdown voltage is higher than normal operating volt-
age and its reverse current leakage is small. Please refer to the
application note Output Diode Clamping for the A8511 for more
details.
Input UVLO When VIN rises above the UVLO enable hyster-
esis (VUVLO(th) + VUVLO(hys) ), the A8511 is enabled. It is disabled
when VIN falls below VUVLO(th) for more than 50 s. This lag
is to avoid shutting down because of momentary glitches in the
power supply.
Input OVLO When VIN rises above VOVLO(th) for more than
50 s, the A8511 is disabled, the boost converter shuts down
instantly, and LED current falls gradually with the CAP pin
capacitor. When VIN falls below VOVLO(th) and EN is high, the
device is reenabled.
Thermal Derating Thermal derating can be achieved by con-
necting an NTC thermistor between VTI and ground, as shown
in figure 5. When the A8511 is enabled and VTI > 1.1 V, 100%
current for the LEDs is controlled by the ISET and DIM pins.
When VTI falls below 1.1 V, VISET starts to follow VTI
, result-
ing in ILEDX varying proportionately with VTI represented by the
overlap of the dotted and solid curves. The proportion of ILED
to VTI , when LED current is controlled through the VTI pin, is
calculated as:
I
ILEDx = 960 × VTI / RISET , (4)
where ILEDx is the LEDx pin current in mA, and RISET is in k.
There is a hysteresis built into the VTI pin circuit, so while VTI is
decreasing, there is a delay before proportional change begins if
VTI pin voltage starts above 1.1 V. When VTI starts below 1.1 V,
or falls below 1.1 V during operation and then starts increasing
again VISET will follow VTI until the voltage reaches 1.23 V.
Figure 5. Thermal derating reference circuit
VTO
VTI
NTC
RISET
RVC
A8511
–t°
ISET
LED Current
Reference
+
Minimum
Select
2.46 V 1.23 V
÷2
Figure 4. Output overvoltage protection (OVP) operation
ILED
t
Symbol Parameter Units/Division
C1 VOVP 10 V
C2 ILED 50 mA
t time 100 μs
C2
C1
VOVP
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
19
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Bias Supply
The BIAS pin provides regulated 6 V for internal circuits. Con-
nect a CBIAS capacitor with a value in the range of 0.1 to 1 F.
Efficiency Considerations
For better efficiency, use a high quality inductor with relatively
low DCR and core loss.
Use a low forward voltage Schottky diode with relatively low
junction capacitance.
Use matched forward voltage LEDs for better efficiency.
The A8511 provides an output disconnect function through a load
switch that is connected from the boost converter output (CAP) to
LED connection (OUT). This function protects the system against
short circuit conditions from common anode LED connection to
ground, for both boost and SEPIC configurations.
When comparing the efficiency of the A8511 with an alternate
implementation requiring an external input/output disconnect
function, the additional power dissipation in this disconnect
switch must be considered for a proper comparison. To bypass
the disconnect switch, short the CAP pin to the OUT pin to
have a direct connection from the boost regulator to the com-
mon anode LED node. When the disconnect switch is bypassed,
both the boost and the SEPIC implementations are not protected
against output short circuit conditions.
Audible Noise Considerations
Multilayer ceramic capacitors cause audible noise when sub-
jected to voltage ripple in the audio frequency range, due to the
piezoelectric effect. Ceramic capacitors connected across boost
converters can also cause audible noise due to voltage ripple
at dimming frequencies. During the PWM dimming off-time,
the voltage across the capacitors drops due to leakage through
the output disconnect switch and the OVP pin. This voltage is
regulated to the desired output level during the PWM dimming
on-time. This voltage ripple may cause audible noise.
Audible noise can be minimized with higher dimming frequency,
but at higher dimming frequencies accuracy may be affected, as
shown in the Performance Characteristics section. It is recom-
mended to use 200 Hz for optimum performance.
Selecting a sufficiently large capacitor across the boost output can
reduce voltage ripple and noise. It is observed that the audible
noise below 250 mV ripple is negligible.
The value to select for a boost capacitor can be calculated using
the following formula:
C.
0.25fPWM
(1 – DFPWMmin)
I
lk
(5)
where
Ilk is the leakage current; select Ilk = 165 A at a 30 V output and
175 A at a 40 V output,
DFPWMmin is the minimum dimming PWM duty cycle, and
fPWM is the dimming frequency; typically 200 Hz.
For example, if the dimming frequency is 200 Hz, the minimum
dimming PWM duty cycle = 10%, and VOUT = 30 V, then select
the boost capacitor as:
C3 F
==
.
0.25200
(1 – 0.1)
165 A
The capacitance of ceramic capacitors drops with DC bias. Use
an appropriate capacitor to get at least 3 F at 30 V.
The selection of a ripple voltage of 0.25 V is based on a typical
MLCC. This ripple level depends on the type and construction of
the MLCC. Increase the boost capacitor if noise exists at 0.25 V.
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
20
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Application Information
Design Example
This section provides a method for selecting component values
when designing an application using the A8511.
Assumptions For the purposes of this example, the following are
given as the application requirements:
• VBAT: 8 to 18 V
• Quantity of LED channels, #CHANNELS
: 3
• Quantity of series LEDs per channel, #SERIESLEDS : 8
• LED current per channel, ILED: 80 mA
• Total current all channels, IOUT = ILED × #CHANNELS
• Vf at 80 mA: 3 to 3.4 V
• fSW: 2 MHz
• TA(max): 65°C
Dimming The A8511 can work with wide range of PWM fre-
quencies. A small delay between the PWM signal and the LED
current may have a noticeable effect at high PWM frequencies
combined with low PWM duty cycles. For example, at 100 Hz
and 10% PWM duty cycle, the PWM on-period is 1 ms. In that
period, the delay causes only a 0.6% error. If the PWM frequency
is 1 kHz, this error is 6%. However, the error caused by the turn-
on delay can be decreased by increasing the applied PWM duty
cycle as shown on page 10 in the Performance Characteristics
section.
Procedure The procedure consists of selecting the appropriate
configuration and then the individual component values, in an
ordered sequence.
1. Identify the SELx pins to use. For 3 channels:
connect pin SEL2 to VTO
connect pin SEL1 to ground
2. Connect LEDs to pins LED1 through LED3 (leave pin LED4
open).
3. Select resistor RISET (connected between pin ISET and
AGND). Given ILED = 80 mA and AISET = 960, then:
R
ISET = 1.235 / (ILED / AISET ) . (6)
Substituting:
R
ISET = 1.235 / (0.080 / 960) = 14.82 k .
Select a common value: 14.7 k, 1%.
4. Select resistor RFSET (connected between pin FSET and
AGND). Given:
RFSET = 51 /fSW , (7)
for a 2 MHz switching frequency, select:
RFSET = 51 / 2 = 25.5 k , 1%.
5. Select resistor ROVP (connect to the OVP pin to set the
OVP level, VOUT(max)). Given Vf
(max) = 3.4 V, 0.75 V as
the VLED regulation level, and worst case output disconnect
switch voltage drop, then:
VOUT(max) (Vf (max) × #SERIESLEDS )
+ VLED + (RODS(on) × ILED × #CHANNELS )
=
. (8)
Substituting:
V
OUT(max) = (3.4 × 8 + 0.75) + (4 × 0.08 × 3) = 28.91 V .
The switch resistance RODS(on) can be found in the electri-
cal table and is listed as worst case at 4 at high tempera-
tures. To set the output OVP level to 33 V, given an IOVPH of
200 A, and VOVP(th) = 19.5 V:
R
OVP = (VOVPVOVP(th) ) / IOVPH . (9)
Substituting:
R
OVP = (33 – 19.5) / 200 × 10-6 = 68 k . (10)
6. Select inductor L1. This should assume a maximum boost
converter duty cycle, D(max), at VBAT(min) and 90% ef-
ficiency, η.
D(max) = 1– (VBAT(min) × η) / VOUT(max) (11)
D(max) = 1– (8 × 0.9) / 28.91 = 75% .
Then calculate maximum switch on-time:
ton(max) = D(max) / fSW (12)
= 0.75 / 2 × 106 = 375 ns .
Maximum input current can be calculated as:
IBAT = (VOUT(max) × IOUT) / (VBAT(min) × η) (13)
I
BAT(max) = [28.91 × (0.080 × 3)] / (8 × 0.9) = 963 mA.
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
21
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Set inductor ripple at 30% of IBAT(max):
IL = IBAT(max) × ILripple(Ideal) . (14)
Substituting:
IL = 0.3 × 963 = 289 mA .
Given, during switch on-time:
VBAT(min) = L × IL × fSW / D , (15)
8 = L × 0.289 × 2 ×106 / 0.75, and
L = 10.4 H .
Select a common value: L(used) = 10 H.
It is recommended to select an inductor that can handle a DC
current level that is greater than 963 mA, at the peak current
level (saturation) of 963 mA + 289 mA / 2 = 1.11 A. This is
to ensure that the inductor does not saturate at any steady
state or transient condition, within specified temperature and
tolerance ranges. Inductor saturation level decreases with
increasing temperature. It is advisable to use a inductor with a
saturation level of 2.0 A. The inductor should have a low DC
resistance (DCR) and core loss for better efficiency.
7. Select output capacitor COUT, given:
fPWM = 100 Hz , (16)
assuming 20% minimum dimming PWM duty cycle,
DPWM(min) , and the maximum leakage current through the
output disconnect switch at VOUT = 28 V is 165 A and
VCOUTripple = 0.25 V.
Select the output capacitor as:
COUT = Ilk × (1 – DPWM(min)) / (fPWM × VCOUTripple ) . (17)
Substituting:
COUT = 165 A× (1 – 0.2) / (100 × 0.25) = 5.3 F . (18)
Select 6.8 F.
The RMS current through COUT is given by:
Crms
1/2
IOUT ×
=,
1– D
D(max) + (r / 12)
(19)
where:
r = ΔIL / IBAT(max) , and (20)
IL=.
L
(used)
× fSW
V
BAT
(min)
× D
(21)
Substituting:
(80 mA × 3 {[0.75 + (0.3 / 12)]/(1–0.75)}1/2 = 0.422 A .
Select a capacitor with an RMS current rating greater than 0.422 A.
8. Select input capacitor CIN, given:
CIN = IL / (8 × fSW × VINripple ) , (22)
where VINripple is the input ripple voltage, which can be as-
sumed to be 1% of VBAT. Then:
CIN = 0.3 / (8 × 2 × 106 × 0.01 × 8) = 0.23 F .
Select a 2.2 F or higher, 35 or 50 V, ceramic capacitor, X5R
or X7R grade.
The RMS current through CIN is given by:
IINRMS = (IOUT × r) / [(1 – D) × 121/2 ], (23)
= [(80 mA × 3 )× 0.3]
/ [(1 – 0.75) × 3.46] = 83 mA .
Select a capacitor with an RMS current rating greater
than 83 mA.
9. Select the boost diode D1 (connect between the SW pins and
the output). D1 should be a Schottky diode with low forward
drop and junction capacitance.
The diode reverse voltage rating should be greater than VOUT.
A 40 to 50 V diode rating is recommended.
The diode DC current rating should be greater than IOUT and
the peak repetitive current rating should be > IBAT(max)
+ IL / 2.
10. Select the compensation capacitor CCOMP (connect between
the COMP pin and ground). Typically, use a 1 F capacitor to
reduce audio hum during PWM dimming.
11. Calculate Power Loss. Calculate power loss at various operat-
ing conditions to estimate worst-case power dissipation.
a) Loss in LED drive:
ILEDx × VLEDx for one string
+ (ILEDx × VLEDx(av) +0.75
× quantity of remaining enabled LED strings), (24)
where VLEDx is the regulation voltage of the LEDx pins, 0.75 V
typical, and worst-case drop is mismatch due to LED Vf.
A good approximation for VLEDx(av) is 0.8 V. This assumes
that some of the remaining strings will regulate below, and
some above, a value of 1.55 V. If the predicted LED match-
ing is tighter, then a lower value can be used. If the predicted
LED mismatch is large, then a higher value should be used.
To get the complete and accurate power dissipation, the user
will need to measure each individual LED pin to get the exact
VLED voltage:
(80 mA × 0.75) + [80 mA × 2 × (0.8 + 0.75)] = 0.308 W .
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
22
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
b) Loss in low drop-out regulator (LDO) + bias:
PLDO = VBAT(max) × IBIAS , (25)
with bias current during switching 17 mA typical.
c) Boost switch conduction loss:
I 2
BAT(max) × D × RDS(on) × (1+ r2 /12) , (26)
where:
r =IL / IBAT(max) . (27)
d) Boost switch switching loss:
VOUT × IBAT(max) × (trise + tfall) × fSW . (28)
Switch loss calculations assume negligible input gate charge
on internal boost MOSFET until VG(th) (gate threshold), com-
pared to the Miller charge; trise and tfall are measured in the
lab under full load conditions. To approximate this value, use
5 ns for rise and fall times.
e) Diode loss:
Diode switching loss = 0.2 × Cd × V 2
OUT × fSW , (29)
where Cd is the average junction capacitance of the Schottky
diode. Then:
Diode conduction loss = Vf × IBAT(max) × (1–D) (30)
f) Inductor DCR loss:
I 2
IN × RDC × (1+ r2 /12) . (31)
g) Inductor core loss:
This value is an estimate. The default value would be 50 mW
at 1 A ripple current, and then scaled based on ripple current.
h) Power loss in output disconnect switch:
PSWDISC(on) = RODS(on) × IOUT2 , (32)
If the Output Disconnect Switch On-Resistance, RODS(on) , is
2 , then:
PSWDISC(on) = 2 × 0.242 = 0.11 W .
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
23
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
EN
FSET
NC
VTO
VTI
COMP
ISET
RISET
RNTC
RVC
CIN
D1
L1
10 μH
VIN SW SWSW OVP CAP
OUT
ROVP
VBAT
A8511
LED4
LED3
LED2
LED1
DIM
SEL1
SEL2
BIAS
–t°
CCOMP
1 μF
10 V
CBAT
4.7 μF
50 V
COUT
4.7 μF
50 V
CBIAS
0.1 μF
10 V
DGNDLGNDAGND PGND PGNDPGND
RFSET
25.5 kΩ
12.4 kΩ
PAD
Figure 6. Typical circuit for driving 2 LED strings at up to 35 V at 200 mA
per LED string, with thermal derating
Typical Application Circuits
EN
VTO
VTI
ISET
DAC
D1
L1
10 μH
VIN SW SWSW OVP CAP
OUT
ROVP
VBAT
A8511
LED4
LED3
LED2
LED1
CIN
CBAT
4.7 μF
50 V
COUT
4.7 μF
50 V
COMP
DIM
CCOMP
1 μF
10 V FSET
NC
SEL1
SEL2
BIAS
CBIAS
0.1 μF
10 V
RISET DGNDLGNDAGND PGND PGNDPGND
PAD
RFSET
25.5 kΩ
24.3 kΩ
Figure 7. Typical circuit for analog dimming with external DC voltage
EN
ISET
D1
L1
10 μH
VIN SW SWSW OVP CAP
CP1 CP2 CP3 CP4
OUT
ROVP
VBAT
A8511
LED4
LED3
LED2
LED1
CIN
CBAT
4.7 μF
50 V
COUT
4.7 μF
50 V
FSET
NC
VTO
VTI
COMP
RNTC
RVC
DIM
SEL1
SEL2
BIAS
–t°
CCOMP
1 μF
10 V
CBIAS
0.1 μF
10 V
RISET
DGNDLGNDAGND PGND PGNDPGND
PAD
RFSET
25.5 kΩ
24.3 kΩ
Figure 8. Typical circuit with ESD capacitors across LEDs (CPx 10 nF),
with thermal derating
EN
VTO
VTI
ISET
D1
L1
10 μHL2
10 μH
VIN SW SWSW OVP CAP
OUT
ROVP
VBAT
A8511
LED4
LED3
LED2
LED1
CIN
CBAT
4.7 μF
50 V
COUT
4.7 μF
50 V
CC
1 μF
50 V
COMP
DIM
CCOMP
1 μF
10 V FSET
NC
SEL1
SEL2
BIAS
CBIAS
0.1 μF
10 V
RISET DGNDLGNDAGND PGND PGNDPGND
PAD
RFSET
25.5 kΩ
24.3 kΩ
Figure 9. Typical circuit as SEPIC converter (SEPIC converters can
provide output voltage higher or lower than the input voltage; this topology
can be used if the required output voltage level is within application input
voltage range)
2 MHz, 4 Channel×150 mA WLED/RGB Driver
with Output Disconnect
A8511
24
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8511-DS
Package LP, 28-Pin TSSOP with Exposed Thermal Pad
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A
1.20 MAX
0.15
0.00
0.30
0.19
0.20
0.09
0.60 ±0.15
1.00 REF
C
SEATING
PLANE
C0.10
28X
0.65 BSC
0.25 BSC
21
28
9.70±0.10
4.40±0.10 6.40±0.20
GAUGE PLANE
SEATING PLANE
ATerminal #1 mark area
B
For Reference Only; not for tooling use (reference MO-153 AET)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
B
C
Exposed thermal pad (bottom surface); dimensions may vary with device
Branded Face
6.10
0.65
0.45
1.65
3.00
5.00
28
21
PCB Layout Reference View
C
5.08 NOM
3 NOM
Reference land pattern layout (reference IPC7351
SOP65P640X120-29CM);
All pads a minimum of 0.20 mm from all adjacent pads; adjust as
necessary to meet application process requirements and PCB layout
tolerances; when mounting on a multilayer PCB, thermal vias at the
exposed thermal pad land can improve thermal dissipation (reference
EIA/JEDEC Standard JESD51-5)