TECHNICAL DATA POWER MOSFET N CHANNEL Devices 13 AMPERE 500 VOLTS 0.4 IRF450 * * * * REPETITIVE AVALANCHE RATINGS LOW RDS(ON) LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 250C ID Pulsed Drain Current (1) IDM Power Dissipation TC = 250C PD Operating Junction & Storage Temperature Range TJ, Tstg Lead Temperature (1/16" from case for 10 secs.) TL THERMAL RESISTANCE RATINGS Thermal Resistance Junction-to-Case Junction-to-Ambient Case-to-Sink (1)Pulse width limited by maximum junction temperature 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Symbol RthJC RthJA RthCS Value 500 20 13 52 150 -55 to +150 300 Typ. 0.15 Max. 0.83 30 Units V V A A W 0 C 0 C Units C /W 0 C /W 0 C /W 0 100603 Page 1 of 2 POWER MOSFET N CHANNEL IRF450 ELECTRICAL CHARACTERISTICS (TJ = 250C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A Gate Threshold Voltage VDS = VGS, ID = 250 A Gate-Body Leakage VGS = At Rated VGS V(BR)DSS 500 VGS(th) 2.0 Zero Ga te Voltage Drain Current VDS = 80 % max V(BR)DSS, VGS = 0 V, TJ = 1250C Drain-Source On-State Resistance (2) VGS = 10 V, ID = 7.2 A TYP. V IGSS 100 nA IDSS 250 A IDSS 1000 A DS(on) 0.40 g fs 8.7 S() VGS = V Ciss 2700 Output Capacitance VDS = 25 V Coss 350 Reverse Transfer Capacitance f = Crss 75 Total Gate Charge Gate-Source Charge Gate -Drain Charge Turn-On Delay Time Rise Time MHz VDS = V(BR)DSS * 0.8 VGS = 10 V, ID = 13 A (Gate charge is essentially independent of operating temperature.) Vdd = 250 V, ID = 13 A, RG = 6.2 RO = 20 Turn-Off Delay Time t UNITS V r Forward Transconductance (2) VDS = 50 V, ID = 7.2 A MAX. 4.0 Zero Gate Voltage Drain Current VDS = max Rating, VGS = 0 V Input Capacitance MIN. pF Qg 130 Qgs 17 Qgd 64 d(on) 27 t nC ns r 66 t d(off) (Switching time is t Fall Time essentially independent f of operating temperature.) SOURCE-DRAIN DIODE RATINGS & CHARACTERISTICS (Tj = 250C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. Continuous Current IS Pulsed Current (1) ISM Forward Voltage (2) IF = IS, VGS = 0 V VSD Reverse Recovery Time t IF = IS, dI/dt = A/S rr Reverse Recovered Charge IF = IS, dI/dt = A/S 3.2 Qrr 100 60 MAX 13 52 UNITS A A 1.4 V 1200 ns 14 C (1)Pulsed width limited by maximum junction temperature. (2)Pulse Test: Pulse width < 300 sec. Duty cycle 2%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 100603 Page 2 of 2