TECHNICAL DATA
POWER MOSFET N CHANNEL
Devices
IRF450
13 AMPERE
500 VOLTS
0.4 Ω
• REPETITIVE AVALANCHE RATINGS
• LOW RDS(ON)
• LOW DRIVE REQUIREMENT
• DYNAMIC dv/dt RATING
ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted)
Parameters / Test Conditions Symbol Value Units
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current TC = 250C ID 13 A
Pulsed Drain Current (1) IDM 52 A
Power Dissipation TC = 250C PD 150 W
Operating Junction & Storage Temperature Range TJ, Tstg -55 to +150 0C
Lead Temperature (1/16" from case for 10 secs.) TL 300 0C
THERMAL RESISTANCE RATINGS
Thermal Resistance Symbol Typ. Max. Units
Junction-to-Case RthJC 0.83 0C /W
Junction-to-Ambient RthJA 0.15 30 0C /W
Case-to-Sink RthCS 0C /W
(1)Pulse width limited by maximum junction temperature
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 100603
Page 1 of 2
POWER MOSFET N CHANNEL
IRF450
ELECTRICAL CHARACTERISTICS (TJ = 250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
V(BR)DSS
500
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS(th)
2.0
4.0
V
Gate-Body Leakage
VGS = At Rated VGS
IGSS
100
nA
Zero Gate Voltage Drain Current
VDS = max Rating, VGS = 0 V
IDSS
250
µA
Zero Gate Voltage Drain Current
VDS = 80 % max V(BR)DSS, VGS = 0 V, TJ = 1250C
IDSS
1000
µA
Drain-Source On-State Resistance (2)
VGS = 10 V, ID = 7.2 A
rDS(on)
0.40
Ω
Forward Transconductance (2)
VDS = 50 V, ID = 7.2 A
gfs
8.7
S(Ω)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = V
VDS = 25 V
f = MHz
Ciss
Coss
Crss
2700
350
75
pF
Total Gate Charge
Gate-Source Charge
Gate -Drain Charge
VDS = V(BR)DSS * 0.8
VGS = 10 V, ID = 13 A
(Gate charge is
essentially
independent of
operating
temperature.)
Qg
Qgs
Qgd
130
17
64
nC
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Vdd = 250 V,
ID = 13 A,
RG = 6.2 Ω
RO = 20 Ω
(Switching time is
essentially independent
of
operating temperature.)
td(on)
tr
td(off)
tf
27
66
100
60
ns
SOURCE-DRAIN DIODE RATINGS & CHARACTERISTICS (Tj = 250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. MAX UNITS
Continuous Current IS 13 A
Pulsed Current (1) ISM 52 A
Forward Voltage (2)
IF = IS, VGS = 0 V
VSD
1.4
V
Reverse Recovery Time
IF = IS, dI/dt = A/µS
trr
1200
ns
Reverse Recovered Charge
IF = IS, dI/dt = A/µS
Qrr
3.2
14
µC
(1)Pulsed width limited by maximum junction temperature.
(2)Pulse Test: Pulse width < 300 µsec. Duty cycle ≤ 2%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 100603
Page 2 of 2
