Order this data sheet by PZTA63T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA63TI ,T3 PZTA64TI ,T3 Advance information PNP Small-Signal Darlington Transistors This family of PNP small-signal darlington transistors is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. . NPN Complements are PZTAI 3 and PZTAI 4 High fT; 125 MHz Minimum . The SOT-223 Package can be Soldered Using Wave or Reflow. -,:..,~).,.<{: ~/.,.. .::J+-~+::' ~$?~:ye)i<+:,. .'i, / . SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of sol.dered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. . Available in 12 mm Tape and Reel TI Configuration -- 7 Inch Reel; 1000 Units T3 Configuration -- 13 Inch Reel; 4000 Units .T@&" \ ,"+ib.$R2 ,,,J t*,~+,.\ ,. ~c ::< ~"e,., s: {.<,,~;$$ @ \ .$$ ,,-.i* ,?~ !*t.:Y 3 ,<. ~:*., EMl~ER t.:)\ ,:,::~:\.:\ ~t' ..:*\t., i:l~;' ,*P%., .`*.( ~t>~ *< .,. #,,.:,,,,;?':} , i;:, ?.*' ..\\ MAXIMUM RATINGS ,\Q\l~ ~.?" Rating ,,:$...i!>. .,.,,. \Ti:!,,, V,b Collector-Emitter Voltage *J.'., ?<.,+ :W, ~ `\*~ .. ,e$~. Collector-Base Voltage ,3: ,i&\, ~: Emitter-Base Voltage "~?$tv .A*`*$9 k<.~::,, ~..,,,~i~,> S3~ Total Power Dissipation up to TA = 25C* ~ `$t~$'"~~ ,./:l,,.,-~+'!h+~t. :} Collector Current ? ~$$, ..:, .".:x~~.. ,,,>,..., ~,,,<i:;.li, . ),. Storage Temperature Range :$i~ ,4*I ~~! ,.>i: Junction Temperature ~~%i~;'''''?'" ~..j,,.: Symbol Value Unit VCES - 30 Vdc VCBO - 30 Vdc VEBO -10 Vdc Ptot* 1.5 Watis [c - 500 mAdc -65to+150 Tstg `c TJ 150 `c ReJA 83.3 `cm DEVICE MARKING ,,#;;# , `+4 ,.. ~,]...:+>+>$' +*, PZTA63 P2U )..{k~.,:., ~*.,\ PZTA64 P2V ~,~%;~~:i? THERMA~,~$~dCTERISTICS Therm~jl$~i$@'ce ,.4...,, W~~~CAL from Junction to Ambient* CHARACTERISTICS .,,/} .,,. `::) I , (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (1c = - 100 pAdc, VgE = O) V(BR)CES -30 -- Vdc Collector-Base Breakdown Voltage (1c = -100 nA, IE = O) V(BR)CBO - 30 -- Vdc V(BR)EBO -lo -- Vdc Characteristic OFF CHARACTERISTICS Emitter-Base Breakdown Voltage (lE = -100 nA, Ic = O) Device mounted on a glaaa epoxy pflnted circuit board 1,575 in, x 1,575 in, x 0.059 in.; mounting Thermal Clad is a registered trademark TMa document contains information pad for the collector (continued) lead min. 0,93 in2. of the Bergquiat Company on a new product, Specifications and information harein are subject to change without notice. MOTOROLA @ @ MOTOROW INC., 1990 W AD11494RI ELECTRICAL CHARACTERISTICS -- continued (TA = 25C unless othewise Characteristic noted) Symbol Min lEBO ICBO Max Unit -- - 0.1 pAdc -- -0.1 pAdc OFF CHARACTERISTICS -- continued Emitter-Base Collector-Base Cutoff Current (VBE = - 10 Vdc, Ic = O) Cutoff Current (VCB = - 30 Vdc, IE = O) ON CHARACTERISTICS DC Current Gain (1c =- 10 mAdc, VCE =-5.0 (1c = -100 mAdc, VCE = -5.0 hFE Vdc) Vdc) PZTA63 PZTA64 PZTA63 PZTA64 Collector-Emitter Saturation Voltage (1c = -100 mAdc, IB = -0.1 mAdc) vCE(sat) Base-Emitter On-Voltage (VCE = -5.0 Vdc, Ic = -100 vBE(on) DYNAMIC mAdc) CHARACTERISTICS MOTOROLA PZTA63TI PZTA63T3 2 PZTA64T1 PZTA64T3 SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the collector pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(m~), the maximum rated junction temperature of the die, ReJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. pD = TJ(max) - TA ReJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can cal- culate the power dissipation of the device which in this case is 1.5 watts. pD = 150C - 25C = 1,5 watts 83.3"CW The 83.3C~ assumes the recommended collecl~r pad area of 965 mi12 on a glass epoxy printed circuit?@@@ to achieve a power dissipation of 1.5 watts. If spa~~$~f~a premium, a more realistic approach is to use the.Q,+~~&at a PD of 800 milliwatts using the footprint shown,. $~}$~w alternative would be to use a ceramic substrate ,pP+,~~+#Uminum core board such as Thermal Clad. Using ~,@#r@material such as ~\``$?t: Thermal CladTM, an aluminum cord%oa~, the power dissipation can be doubled using the saTe''Mtprint. .:?>*. .~:.. `$,.,i,.$,\;y* ... .k~..,. isi~). Y.\,,+ ,..<.)$.,, MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNT#~;&PPLICATIONS ,,..~,.:,.,> .x, .>,<% `%:av"~ The melting temperatq@')&$~6@er is higher than the rated temperature of the de~ce'$wfhe entire device is heated to a high temperature; th~~~,brp failure to complete soldering within a shoti time at ~"~~#'mperature can adversely affect the following char&&~t!cs: heat resistance and humidity resistance whic~c~wwsult in device failure. Therefore the following item,~+~h~Q,d'always be observed in order to minimize the ther~,@~$~r,@sto which the devices are subjected. .. .~{;\,..2$::,,,.F;.. ,q~,~~ti~ys preheat the device $RI@& delta temperature between the preheat and soldering 1.., should be 10OC or less* . When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the differ- PZTA63T1 PZTA63T3 PZTA64T1 PZTA64T3 ence in temperatures of the case and the leads shall be Al OC or less. The soldering temperature and time shall not exceed 260C for more than 10 seconds. . When shiting temperature from preheating to soldering, the maximum gradient shall be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for three minutes or more. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent mechanical stress. . Mechanical cooling. stress or shock should not be applied during *Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MOTOROLA, 3 OUTLINE DIMENSIONS STYLE 1: PIN 1, 2, 3. 4, BASE COLLECTOR EMl~ER COLLECTOR STYLE 2 PIN 1. 2, 3. 4. ANODE CATHODE NC CATHODE STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 4 PIN 1, 2. 3. 4, SOURCE DRAIN GATE DRAIN SNLE 5: PIN 1. 2. 3. 4. DRAIN GATE SOURCE GATE NOTES 1. DIMENSIONING Y14,5M, 1982, 2. CONTROLLING AND TOLERANCING DIMENSION: PER ANSI MILLIMETERS, CASE 318E-04 TO-261AA Motorola res~&~~@#ght to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability:W19?~outof the application or use of any product or circuit described herein; neither does it convey any license under its patent tights nor the rights of other:~&ot~o~S products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other aPP!\Xg*.@@ndad to suPPofl or sustain life, or fOranYother application in which the failure of the Motorola product could create a situation where personal inj~~@.@th may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and :,~d ~$orola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable ,, :@ey fees arising out of, dkectly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim @ a%9es that Motorola was ne91i9entregarding the design or manufacture of the part. Motorola and @are registered trademarks of Motorola, inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; PO. Box 2091 2; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Center; 88 Tanners Drive, Blakelands, Milton Keynes,MK14 56P, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinaoawa-ku, Tokvo 141 Ja~an. ASIA-PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon ~arbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N. T., Hong Kong. mM o o MOTOROLA PZTA63TI PZTA63T3 PZTA64T1 . PZTA64T3