SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 12.9 42 P-TO263-3-2 A P-TO220-3-1 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP42N03S2L-13 P-TO220-3-1 Q67042-S4034 2N03L13 SPB42N03S2L-13 P-TO263-3-2 Q67042-S4035 2N03L13 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25C 42 TC=100C 35 ID puls 168 EAS 110 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 64 W -55... +175 C Pulsed drain current TC=25C Avalanche energy, single pulse ID =42 A , VDD =25V, RGS =25 Reverse diode dv/dt mJ kV/s IS =42A, VDS =-V, di/dt=200A/s, Tjmax =175C TC=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2001-04-05 SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 2.3 - - 62 - - 40 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =37A Zero gate voltage drain current A IDSS VDS =30V, VGS =0V, Tj=25C - 0.01 1 VDS =30V, VGS =0V, Tj=125C - 10 100 - 1 100 Gate-source leakage current IGSS VGS =20V, VDS=0V Drain-source on-state resistance m RDS(on) VGS =4.5V, ID=21A - 15 19.9 VGS =4.5V, ID=21A, SMD version - 14.7 19.6 VGS =10V, ID =21A - 9.5 12.9 VGS =10V, ID =21A, SMD version - 9.2 12.6 Drain-source on-state resistance2) nA RDS(on) 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2Diagrams are related to straight lead versions Page 2 2001-04-05 SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 21 42 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =35A Input capacitance Ciss VGS =0V, VDS =25V, - 895 1120 Output capacitance Coss f=1MHz - 365 455 Reverse transfer capacitance Crss - 82 123 Gate resistance RG - 1 - Turn-on delay time td(on) - 6.5 9.8 ns Rise time tr - 58 87 Turn-off delay time td(off) - 24 36 Fall time tf - 14.5 21.8 - 3 3.8 - 8.5 12.7 - 21.6 27 V(plateau) VDD =24V, ID=21A - 3.5 - V IS - - 42 A - - 168 VDD =15V, VGS=10V, ID =21A, RG =7.8 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =21A VDD =24V, ID =21A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =42A - 0.95 1.25 V Reverse recovery time trr VR =-V, IF=lS, - 22 33 ns Reverse recovery charge Qrr diF /dt=100A/s - 11.5 18 nC Page 3 2001-04-05 SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 70 parameter: VGS 10 V SPP42N03S2L-13 50 W SPP42N03S2L-13 A 60 40 55 35 45 ID Ptot 50 40 30 25 35 30 20 25 20 15 15 10 10 5 5 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 C parameter : D = tp /T 10 10 1 3 SPP42N03S2L-13 SPP42N03S2L-13 K/W A 10 0 tp = 6.8s 10 -1 R DS ( on ) = V DS ID /I D Z thJC 10 s 10 2 D = 0.50 100 s 10 10 -2 0.20 0.10 1 0.05 1 ms 10 -3 single pulse 0.02 0.01 10 ms DC 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2001-04-05 SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25C RDS(on) = f (ID ) parameter: tp = 80 s parameter: VGS 110 SPP42N03S2L-13 0.05 Ptot = 64W A VGS [V] a 3.0 e b ID 80 70 d 60 50 c 4.0 d 4.5 e 5.0 f 5.5 g 6.0 h 10.0 b c d 0.04 3.5 RDS(on) h gf 90 SPP42N03S2L-13 0.035 0.03 0.025 0.02 40 c 20 0.005 a 0.5 1 1.5 2 2.5 3 3.5 g 0.01 b 10 0 0 e 0.015 30 4 V 0 0 5 VGS [V] = b 3.5 c 4.0 d 4.5 10 e f 5.0 5.5 20 g h 6.0 10.0 30 40 A 50 7 Typ. transfer characteristics 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 100 50 A S 80 40 70 35 g fs ID ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 60 30 50 25 40 20 30 15 20 10 10 5 1 2 3 4 V 70 ID VDS 0 0 f h 0 0 6 VGS Page 5 10 20 30 40 50 60 70 80 A 100 ID 2001-04-05 SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 21 A, VGS = 10 V parameter: VGS = VDS , ID = 37 A 30 SPP42N03S2L-13 2.5 V V GS(th) RDS(on) 24 22 20 18 16 max. 1.5 typ. 98% 14 min. 1 12 typ 10 8 0.5 6 4 2 0 -60 -20 20 60 100 C 140 0 -60 200 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 s 10 4 10 3 V SPP42N03S2L-13 A Ciss 10 2 IF pF 10 3 Coss Crss 10 2 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2001-04-05 SPP42N03S2L-13 SPB42N03S2L-13 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 42 A , VDD = 25 V, RGS = 25 parameter: ID = 21 A pulsed 120 16 SPP42N03S2L-13 mJ V 100 12 80 VGS E AS 90 70 60 10 0,2 VDS max 0,8 VDS max 8 50 6 40 30 4 20 2 10 0 25 45 65 85 105 125 145 C 185 Tj 0 0 4 8 12 16 20 24 nC 32 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 SPP42N03S2L-13 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2001-04-05 Preliminary data SPP42N03S2L-13 SPB42N03S2L-13 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. 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