©2002 Fairchild Semiconductor Corporation
February 2002
ISL9V5036S3S / ISl9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 390 V
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
ESCIS25 At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy 500 mJ
ESCIS150 At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy 300 mJ
IC25 Collector Current C ontinuous, At TC = 25°C, See Fig 9 46 A
IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 31 A
VGEM Gate t o Emitter Voltage Continuous ±10 V
PDPower Dissipation Total TC = 25°C 200 W
Power Dissipation Derating TC > 25°C 1.33 W/°C
TJOperating Junction Temperature Range -40 to 175 °C
TSTG Storage Junction Temperature Range -40 to 175 °C
TLMax Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500Ω4kV
ISL9V5036S3S / ISL9V5036P3
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3S and ISL9V5036P3 are the next generation
IGBTs that offer outstanding SCIS capability in the D² -Pak (TO-
263) and TO-220 plastic package. These devices are intended for
use in automoti ve ignition circuits, specifically as coil drive rs.
Internal diodes provide voltage clamping without the need for
external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Conta ct your nearest F airchild sales office for more
information.
Formerly Developmental Type 49443
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263
COLLECTOR
(FLANGE)
E
G
D²-Pak
GATE
COLLECTOR
EMITTER
R
2
R
1
Symbol
COLLECTOR
(FLANGE)
JEDEC TO-220AB
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
Package M ark ing and Ordering Information
Electrical Characteristics TA = 25°C unless otherwise noted
Off Stat e Characterist ics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Charac te ristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
V5036S ISL9V5036S3ST TO-263AB 330mm 24mm 800 units
V5036S ISL9V5036S3S TO-263AB Tube N/A 50 units
V5036P ISL9V5036P3 TO-220AB Tube N/A 50 units
Symbol Parameter Test Conditions Min Typ Max Units
BVCER Collector to Emitter Breakdow n Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330 360 390 V
BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0, See F ig. 15
TJ = -40 to 150°C
360 390 420 V
BVECS Emitter to Collector Breakdown Voltage IC = - 75mA , VGE = 0V,
TC = 25°C 30 - - V
BVGES G a te to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V
ICER Collector to Emitter Leakage Current VCER = 250V,
RG = 1KΩ, See
Fig. 11
TC = 25°C - - 25 µA
TC = 150°C - - 1 mA
IECS Emitter to Collector Leakage Current VEC = 24V,
See Fig. 11 TC = 25°C - - 1 mA
TC = 150°C - - 40 mA
R1Series Gate Resistance - 75 - Ω
R2Gate to E mitter Resis tance 10K - 30K Ω
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10 A,
VGE = 4.0V TC = 25°C,
See Fig. 4 - 1.17 1.60 V
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15 A,
VGE = 4.5V TC = 150°C - 1.50 1.80 V
QG(ON) Gate Charge IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14 -32-nC
VGE(TH) Gate to Emitter Threshold Voltage IC = 1. 0mA,
VCE = VGE,
See Fig. 10
TC = 25°C 1.3 - 2.2 V
TC = 150°C 0.75 - 1.8 V
VGEP Gate t o Emit ter Plateau Voltage IC = 10A,
VCE = 12V -3.0- V
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See F ig. 12
-0.74µs
trR Current Rise Time-Res istive - 2.1 7 µs
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, RL = 46Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See F ig. 12
- 4.8 15 µs
tfL Current F all Time-Induct ive - 2.8 15 µs
SCIS Self Clamped Inductive Switching TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
- - 500 mJ
RθJC Thermal Resistance Junction-Case TO-263, TO-220 - - 0.75 °C/W
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
Typical Characteristics
Figure 1. Self Clamped Induc tive Swit chin g
Current vs Time in Clamp Figure 2. Self Clamped Inductive Switchin g
Current vs Inductance
Figure 3. Collector to Emitter On-State Voltage vs
Junction Tem peratu r e Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
Figure 5. Collector Current vs Collector Emitter
On-State Voltage Figure 6. Collector Current vs Collector Emitter
On-State Voltage
tCLP, TIME IN CLAMP (µS)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
35
30
10
45
20
25
0350300025010050 150 200
TJ = 25°C
RG = 1KΩ, VGE = 5V,Vdd = 14V
5
15
40
SCIS Curves valid for Vclamp Voltages of <390V
TJ = 150°C
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
0102468
L, INDUCTANCE (mHy)
TJ = 150°C
RG = 1KΩ, VGE = 5V,Vdd = 14V
TJ = 25°C
SCIS Curves valid for Vclamp Voltages of <390V
35
30
10
45
20
25
0
5
15
40
1.10
1.05
1.00
0.95
0.90
25-25 17
5
12575-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 4.0V
VGE = 3.7V
VGE = 5.0V
VGE = 8.0V
ICE = 6A
VGE = 4.5V
0.85 25-25 17
5
12575-50 0 50 100 150
1.25
1.20
1.15
1.10
1.05
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.00
TJ, JUNCTION TEMPERATURE (°C)
ICE = 10A
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
40
02.01.0 3.0 4.0
50
30
10
0
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
TJ = - 40°C
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
40
0
50
30
02.01.0 3.0 4.0
20
10
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
TJ = 25°C
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature Figure 12. Switching Time vs Junc tion
Temperature
Typical Characteristics (Continued)
ICE, COLLECTOR TO EM ITT ER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
40
02.01.0 3.0 4.0
30
TJ = 175°C
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
2.01.0 3.0 4.0
50
40
30
02.51.5 3.5 4.5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 5V
TJ = 25°C
TJ = 175°C
TJ = -40°C
20
10
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (°C)
50
25 17
5
1257550 100 150
40
30
20
10
0
VGE = 4.0V
17550 100
2.0
1.8
1.6
1.4
1.0
VTH, THRESHOLD VOLTAGE (V)
TJ JUNCTION TEMPERATURE (°C)
1500 125
1.2
VCE = VGE
ICE = 1mA
-50 7525-25
LEAKAGE CURRENT (µ A)
TJ, JUNCTION TEMPERATURE (°C)
1000
10
0.1
10000
100
1
25-25 17512575-50 0 50 100 150
VECS = 24V
VCES = 300V
VCES = 250V
25 17
5
1257550 100 150
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (µS)
20
16
12
6
2
ICE = 6.5A, VGE = 5V, RG = 1KΩResistive tOFF
Inductive tOFF
Resistive tON
10
14
18
8
4
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
Figure 13. Cap acita nce vs C olle ctor to Emi tter
Voltage Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series G ate Resis t anc e
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics (Continued)
C, CAPACITANCE (pF)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3000
1000
500
1500
0105 152025
0
CIES
FREQUENCY = 1 MHz
COES
CRES
2500
2000
QG, GATE CHARGE (nC)
VGE, GATE TO EMITTER VOLTAGE (V)
0
2
4
8
0 1020304050
3
5
7
6
1
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
VCE = 6V
VCE = 12V
BVCER, BREAKDOWN VOLTAGE ( V)
RG, SERIES GATE RESISTANCE (kΩ)
360
352
348
356
10 20001000 3000
344
100
354
350
358
346
TJ = - 40°C
TJ = 25°C
TJ = 175°C
ICER = 10mA
342
340
ZthJC, NORMALIZED THERMAL RESPONSE
T1, RECTANGULAR PULSE DURATION (s)
100
10-2
10-1
10-1
10-2
10-3
10-4 100
10-5
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PU LSE
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
Test Circuits and Waveforms
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Unclamped Energy Test Circuit Figure 20. Unclamped Energy Waveforms
RG
G
C
E
VCE
L
PULSE
GEN DUT RG = 1KΩ+
-
VCE
DUT
5V
C
G
E
LOAD
R
or
L
tP
VGS
0.01Ω
L
IAS
+
-
VCE
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VCE
BVCES
tP
IAS
tAV
0
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002
ISL9V5036S3S / ISL9V5036P3
SPICE Thermal Model
REV 31 May 2001
ISL9V5036S3S / ISL9V3036P3
CTHERM1 th 6 4.0e-2
CTHERM2 6 5 4.8e-4
CTHERM3 5 4 4.7e-4
CTHERM4 4 3 6.4e-2
CTHERM5 3 2 4.9e-2
CTHERM6 2 tl 4.9e-2
RTHERM1 th 6 6.7e-2
RTHERM2 6 5 1.7e-2
RTHERM3 5 4 2.5e-1
RTHERM4 4 3 6.5e-2
RTHERM5 3 2 6.4e-2
RTHERM6 2 tl 1.0e-1
SABER Thermal Model
SABER thermal model
ISL9V5036S3S / ISL9V5036P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.0e-2
cthe rm .cth er m 2 6 5 = 4.8e-4
cthe rm .cth er m 3 5 4 = 4.7e-4
cthe rm .cth er m 4 4 3 = 6.4e-2
cthe rm .cth er m 5 3 2 = 4.9e-2
ctherm.ctherm6 2 tl = 4.9e-2
rtherm.rtherm1 th 6 = 6.7e-2
rtherm.rtherm2 6 5 = 1.7e-2
rtherm.rtherm3 5 4 = 2.5e-1
rtherm.rtherm4 4 3 = 6.5e-2
rtherm.rtherm5 3 2 = 6.4e-2
rtherm.rtherm6 2 tl = 1.0e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th JUNCTION
CASE
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
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Rev. H4
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STAR*POWER is used under license
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