ISL9V5036S3S / ISL9V5036P3 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036S3S and ISL9V5036P3 are the next generation IGBTs that offer outstanding SCIS capability in the D -Pak (TO263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components. EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. * Automotive Ignition Coil Driver Circuits * Coil- On Plug Applications Features * Industry Standard D-Pak package * SCIS Energy = 500mJ at TJ = 25oC * Logic Level Gate Drive Formerly Developmental Type 49443 Package Symbol JEDEC TO-263 D-Pak COLLECTOR JEDEC TO-220AB R1 G GATE E R2 COLLECTOR (FLANGE) COLLECTOR (FLANGE) EMITTER Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 390 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25C, ISCIS = 38.5A, L = 670 Hy 500 mJ ESCIS150 mJ At Starting TJ = 150C, ISCIS = 30A, L = 670 Hy 300 IC25 Collector Current Continuous, At TC = 25C, See Fig 9 46 A IC110 Collector Current Continuous, At TC = 110C, See Fig 9 31 A VGEM Gate to Emitter Voltage Continuous 10 V PD Power Dissipation Total TC = 25C 200 W 1.33 W/C Power Dissipation Derating TC > 25C TJ TSTG Operating Junction Temperature Range -40 to 175 C Storage Junction Temperature Range -40 to 175 C C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 C ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV TL (c)2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISl9V5036P3 Rev. B, February 2002 ISL9V5036S3S / ISL9V5036P3 February 2002 Device Marking V5036S Device ISL9V5036S3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units V5036S ISL9V5036S3S TO-263AB Tube N/A 50 units V5036P ISL9V5036P3 TO-220AB Tube N/A 50 units Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C 330 360 390 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C 360 390 420 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2mA 12 14 - V ICER Collector to Emitter Leakage Current VCER = 250V, TC = 25C RG = 1K, See TC = 150C Fig. 11 - - 25 A - - 1 mA TC = 25C - - 1 mA TC = 150C - - 40 mA - 75 - 10K - 30K Off State Characteristics IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VEC = 24V, See Fig. 11 On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V TC = 25C, See Fig. 4 - 1.17 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150C - 1.50 1.80 V - 32 - nC Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage TC = 25C 1.3 - 2.2 V TC = 150C 0.75 - 1.8 V - 3.0 - V IC = 10A, VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 0.7 4 s - 2.1 7 s VCE = 300V, RL = 46, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 4.8 15 s - 2.8 15 s TJ = 25C, L = 670 H, RG = 1K, VGE = 5V, See Fig. 1 & 2 - - 500 mJ TO-263, TO-220 - - 0.75 C/W Thermal Characteristics RJC Thermal Resistance Junction-Case (c)2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002 ISL9V5036S3S / ISL9V5036P3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 45 RG = 1K, VGE = 5V,Vdd = 14V 40 35 30 TJ = 25C 25 20 15 TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 45 RG = 1K, VGE = 5V,Vdd = 14V 40 35 30 25 20 TJ = 25C 15 TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 0 0 0 50 100 150 200 250 300 350 0 2 4 tCLP, TIME IN CLAMP (S) 1.10 ICE = 6A 1.05 VGE = 3.7V VGE = 4.0V 1.00 VGE = 4.5V VGE = 5.0V VGE = 8.0V 0.90 0.85 -50 0 -25 25 50 75 100 10 125 150 1.25 ICE = 10A 1.20 VGE = 3.7V 1.10 VGE = 4.5V VGE = 5.0V 1.05 VGE = 8.0V 1.00 -50 175 VGE = 4.0V 1.15 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature 50 50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 8 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp 0.95 6 L, INDUCTANCE (mHy) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 TJ = - 40C 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs Collector Emitter On-State Voltage (c)2002 Fairchild Semiconductor Corporation VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 25C 0 0 0 VGE = 8.0V 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector Current vs Collector Emitter On-State Voltage ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002 ISL9V5036S3S / ISL9V5036P3 Typical Characteristics 50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 VGE = 8.0V VGE = 5.0V VGE = 4.5V 40 VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 175C 0 0 1.0 2.0 3.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 40 30 TJ = 175C 20 TJ = 25C 10 TJ = -40C 0 1.0 4.0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.0 2.5 3.0 3.5 4.0 4.5 VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8. Transfer Characteristics 40 30 20 10 0 25 50 75 100 125 150 VCE = VGE 2.0 VGE = 4.0V VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 50 ICE = 1mA 1.8 1.6 1.4 1.2 1.0 175 -50 0 -25 TC, CASE TEMPERATURE (C) 50 75 100 125 150 175 TJ JUNCTION TEMPERATURE (C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 20 10000 VECS = 24V ICE = 6.5A, VGE = 5V, RG = 1K Resistive tOFF 18 1000 16 SWITCHING TIME (S) LEAKAGE CURRENT (A) 25 100 VCES = 300V 10 VCES = 250V 14 Inductive tOFF 12 10 8 6 1 Resistive tON 4 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 11. Leakage Current vs Junction Temperature (c)2002 Fairchild Semiconductor Corporation 175 2 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 12. Switching Time vs Junction Temperature ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002 ISL9V5036S3S / ISL9V5036P3 Typical Characteristics (Continued) ISL9V5036S3S / ISL9V5036P3 Typical Characteristics (Continued) 3000 8 IG(REF) = 1mA, RL = 0.6, TJ = 25C VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1 MHz C, CAPACITANCE (pF) 2500 2000 CIES 1500 1000 CRES 500 COES 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 5 10 15 20 0 25 0 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 30 40 50 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 360 TJ = - 40C BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 358 356 354 TJ = 175C 352 TJ = 25C 350 348 346 344 342 340 10 100 1000 2000 3000 RG, SERIES GATE RESISTANCE (k) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (P D X ZJC X RJC) + TC 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case (c)2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002 L VCE R or L C PULSE GEN LOAD C RG RG = 1K DUT G + DUT G VCE - 5V E E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit VCE BVCES tP VCE L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDD - VGS DUT tP 0V IAS 0 0.01 tAV Figure 19. Unclamped Energy Test Circuit (c)2002 Fairchild Semiconductor Corporation Figure 20. Unclamped Energy Waveforms ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002 ISL9V5036S3S / ISL9V5036P3 Test Circuits and Waveforms th JUNCTION REV 31 May 2001 ISL9V5036S3S / ISL9V3036P3 CTHERM1 th 6 4.0e-2 CTHERM2 6 5 4.8e-4 CTHERM3 5 4 4.7e-4 CTHERM4 4 3 6.4e-2 CTHERM5 3 2 4.9e-2 CTHERM6 2 tl 4.9e-2 RTHERM1 CTHERM1 6 RTHERM1 th 6 6.7e-2 RTHERM2 6 5 1.7e-2 RTHERM3 5 4 2.5e-1 RTHERM4 4 3 6.5e-2 RTHERM5 3 2 6.4e-2 RTHERM6 2 tl 1.0e-1 CTHERM2 RTHERM2 5 SABER Thermal Model SABER thermal model ISL9V5036S3S / ISL9V5036P3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.0e-2 ctherm.ctherm2 6 5 = 4.8e-4 ctherm.ctherm3 5 4 = 4.7e-4 ctherm.ctherm4 4 3 = 6.4e-2 ctherm.ctherm5 3 2 = 4.9e-2 ctherm.ctherm6 2 tl = 4.9e-2 rtherm.rtherm1 th 6 = 6.7e-2 rtherm.rtherm2 6 5 = 1.7e-2 rtherm.rtherm3 5 4 = 2.5e-1 rtherm.rtherm4 4 3 = 6.5e-2 rtherm.rtherm5 3 2 = 6.4e-2 rtherm.rtherm6 2 tl = 1.0e-1 } RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl (c)2002 Fairchild Semiconductor Corporation CASE ISL9V5036S3S / ISL9V5036P3 Rev. B, February 2002 ISL9V5036S3S / ISL9V5036P3 SPICE Thermal Model TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4