1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123F B Features C A Fast switching device(T rr<4.0nS) Surface device type mounting D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant F Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case : Flat lead SOD-123 small outline plastic package A 1.5 1.7 0.059 0.067 Terminal: Matte tin plated, lead free., solderable B 3.3 3.7 0.130 0.146 C 0.5 0.7 0.020 0.028 High temperature soldering guaranteed: 260 C/10s D 2.5 2.7 0.098 0.106 Polarity : Indicated by cathode band E 0.8 1.0 0.031 0.039 Weight : 8.850.5 mg F 0.05 0.2 0.002 0.008 per MIL-STD-202, Method 208 guaranteed Marking Code : D1, D2, D3 Pin Configuration Ordering Information Package Part No. Packing Marking SOD-123F 1N4148W RH 3K / 7" Reel D1 SOD-123F 1N4448W RH 3K / 7" Reel D2 SOD-123F 1N9148B RH 3K / 7" Reel D3 SOD-123F 1N4148W RHG 3K / 7" Reel D1 0.91 SOD-123F 1N4448W RHG 3K / 7" Reel D2 0.036 SOD-123F 1N9148B RHG 3K / 7" Reel D3 Suggested PAD Layout 1.22 2.36 0.048 0.093 4.19 0.165 Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 400 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Repetitive Peak Forward Current IFRM 300 mA Power Dissipation Mean Forward Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range IO 150 mA RJA 450 C/W TJ, TSTG -65 to + 150 C Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Version : D10 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode Electrical Characteristics Symbol Type Number IR= 100uA Reverse Breakdown Voltage IR= 5uA V(BR) Min Max 100 - 75 - Units V Forward Voltage 1N4448W, 1N914BW IF= 5.0mA 1N4148W IF= 10.0mA 1N4448W, 1N914BW IF= 100.0mA VR= 20V Reverse Leakage Current VR= 75V VR=0, f=1.0MHz Junction Capacitance Reverse Recovery Time (Note 2) VF IR 0.62 0.72 - 1.0 - 1.0 - 25 nA V - 5.0 A CJ - 4.0 pF Trr - 4.0 ns Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100, IRR=1mA Tape & Reel specification TSC label Item Top Cover Tape Carieer Tape Any Additional Label (If Required) P1 d P0 T E A C F W B Symbol Dimension Carrier width A 1.85 0.10 Carrier length B 3.94 0.10 Carrier depth C 1.50 0.10 Sprocket hole d 1.5 0.1 Reel outside diameter D 178 1 Reel inner diameter D1 55 Min Feed hole width D2 13.0 0.20 Sprocke hole position E 1.75 0.10 Punch hole position F 3.50 0.05 Sprocke hole pitch P0 4.00 0.10 Embossment center P1 2.00 0.05 Overall tape thickness T 0.23 0.05 Tape width W 8.00 0.20 Reel width W1 14.4 Max W1 D D2 D1 Version : D10 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage Instantaneous Forward Current (A) 100 100 Reverse Current (uA) 10 1 Ta=25C 0.1 Ta=25C 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 Instantaneous Forward Volatge (V) 1.4 1.6 0.01 0 40 60 80 Reverse Volatge (V) 100 120 FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 6 Junction Capacitance (pF) 500 Power Dissipation (mW) 20 400 300 200 100 0 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 Reverse Voltage (V) Ambient Temperature (C) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance () 10000 1000 100 10 1 0 0 1 Forward Current (mA) 10 100 Version : D10