A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data * * * * BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE(sat) < 300mV @ 1A * * * * Complementary PNP Type: FZT749 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability * * * * * Case: SOT223 Case Material: Molded Plastic. "Green" Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product FZT649TA FZT649TC Notes: Compliance AEC-Q101 AEC-Q101 Marking FZT649 FZT649 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information FZT 649 FZT649 Document Number DS33148 Rev. 6 - 2 YWW SOT223 FZT649 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT649 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 35 25 7 3 8 Unit V V V A A Value 2 3 62.5 41.7 12.9 -55 to +150 Unit W W C/W C/W C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads (Note 7) Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) PD RJA RJL TJ, TSTG ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT649 Document Number DS33148 Rev. 6 - 2 2 of 7 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT649 10 VCE(sat) IC Collector Current (A) IC Collector Current (A) Thermal Characteristics and Derating Information Limit 1 DC 1s 100ms 100m 10ms Tamb=25C VCE(sat) Limit 1 DC 1s 100ms 100m 1ms 25mm x 25mm 2oz FR4 10m 10 100s 1 10ms 1 VCE Collector-Emitter Voltage (V) Safe Operating Area 50 60 T amb=25C 50 25mm x 25mm 2oz FR4 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (C/W) Thermal Resistance (C/W) 70 50mm x 50mm 2oz FR4 10 1 100 25mm x 25mm 2oz FR4 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Single Pulse T amb=25C 100 Document Number DS33148 Rev. 6 - 2 50mm x 50mm 2oz FR4 30 D=0.5 20 Single Pulse D=0.2 10 D=0.05 0 100 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) 3.0 50mm x 50mm 2oz FR4 2.5 2.0 25mm x 25mm 2oz FR4 1.5 1.0 0.5 0.0 Pulse Power Dissipation FZT649 Tamb=25C 40 Transient Thermal Impedance Transient Thermal Impedance Max Power Dissipation (W) 10 VCE Collector-Emitter Voltage (V) Safe Operating Area 40 100s 50mm x 50mm 2oz FR4 10m 10 1ms T amb=25C 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve 3 of 7 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT649 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min 35 25 7 - - - - - - - 70 100 75 15 Typ - - - - - - 0.12 0.40 0.9 0.8 200 200 150 50 Max - - - 0.1 10 100 0.3 0.6 1.25 1.0 - 300 - - Unit V V V fT 150 240 - MHz ton toff Cobo - - - 55 300 25 - 50 Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage (Note 9) VCE(sat) Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-On Voltage (Note 9) VBE(sat) VBE(on) DC Current Gain (Note 9) Current Gain-Bandwidth Product Switching Times Output Capacitance Note: hFE A nA V V V - ns pF Test Condition IC = 100A IC = 10mA IE = 100A VCB = 30V VCB = 30V, TA = +100C VEB = 4V IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA IC = 1A, VCE = 2V IC = 50mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V VCE = 5V, IC = 100mA, f = 100MHz IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA VCB = 10V, f = 1MHz 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. FZT649 Document Number DS33148 Rev. 6 - 2 4 of 7 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT649 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) FZT649 Document Number DS33148 Rev. 6 - 2 5 of 7 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT649 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D b1 Q C E Gauge Plane Seating Plane e1 0.25 b L 0 -1 0 e A E1 A1 7 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y1 C1 Y2 Y X FZT649 Document Number DS33148 Rev. 6 - 2 C 6 of 7 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated FZT649 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com FZT649 Document Number DS33148 Rev. 6 - 2 7 of 7 www.diodes.com March 2015 (c) Diodes Incorporated