TIC246 SERIES SILICON TRIACS High Current Triacs 16 A RMS Glass Passivated Wafer MT1 1 400 V to 800 V Off-State Voltage MT2 2 125 A Peak Current G 3 Max IGT of 50 mA (Quadrants 1 - 3) TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC246D TIC246M Repetitive peak off-state voltage (see Note 1) TIC246S 600 VDRM V 700 TIC246N Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) UNIT 400 800 IT(RMS) 16 A Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) ITSM 125 A Peak gate current IGM 1 A Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 400 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT TEST CONDITIONS Repetitive peak off-state current MIN VD = rated VDRM IG = 0 TC = 110C TYP MAX UNIT 2 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 12 50 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -19 -50 current Vsupply = -12 V RL = 10 tp(g) > 20 s -16 -50 Vsupply = -12 V RL = 10 tp(g) > 20 s 34 Vsupply = +12 V RL = 10 tp(g) > 20 s 0.8 2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -0.8 -2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -0.8 -2 On-state voltage Vsupply = -12 V RL = 10 tp(g) > 20 s 0.9 2 ITM = 22.5 A IG = 50mA (see Note 4) 1.4 1.7 mA V V All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC246 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current di/dt Init' ITM = 100 mA 22 40 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -12 -40 Vsupply = +12 V off-state voltage dv/dt(c) MAX IG = 0 MIN VD = Rated VD UNIT mA 80 (see Note 5) Vsupply = -12 V Critical rate of rise of dv/dt TYP Vsupply = +12 V mA -80 IG = 0 TC = 110C Critical rise of VD = Rated VD TC = 80C commutation voltage di/dt = 0.5 IT(RMS)/ms IT = 1.4 IT(RMS) Critical rate of rise of VD = Rated VD on -state current diG/dt = 50 mA/s IGT = 50 mA 1.2 TC = 110C 400 V/s 9 V/s 100 A/s All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 1.9 C/W 62.5 C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs IGT - Gate Trigger Current - mA 100 10 1 0*1 -60 Vsupply IGTM + + + + -40 -20 CASE TEMPERATURE TC08AA 10 VGT - Gate Trigger Voltage - V CASE TEMPERATURE 1000 GATE TRIGGER VOLTAGE vs VAA = 12 V 1 Vsupply IGTM + + + + tp(g) = 20 s 20 40 60 80 100 VAA = 12 V } RL = 10 0 120 0*1 -60 -40 -20 RL = 10 tp(g) = 20 s 0 20 40 60 80 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. 2 TC08AB 100 120 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC246 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE IL - Latching Current - mA IH - Holding Current - mA TC08AE 1000 10 1 Vsupply 100 10 Vsupply IGTM VAA = 12 V IG = 0 + 0*1 -60 CASE TEMPERATURE TC08AD 100 + + - Initiating ITM = 100 mA -40 -20 0 20 40 60 80 100 TC - Case Temperature - C DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 -60 -40 VAA = 12 V -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. 120 + + Figure 4. 3