PD - 93793E IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.045 300K Rads (Si) 0.045 ID QPL Part Number 12A* JANSR2N7491T2 12A* JANSF2N7491T2 IRHF54Z30 500K Rads (Si) 0.045 12A* JANSG2N7491T2 IRHF58Z30 1000K Rads (Si) 0.056 12A* JANSH2N7491T2 TO-39 International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre and Post Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units 12* 10 48 25 0.2 20 520 12 2.5 3.0 -55 to 150 A W W/C V mJ A mJ V/ns o 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 04/25/06 IRHF57Z30, JANSR2N7491T2 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions 30 -- -- V VGS = 0V, ID = 1.0mA -- 0.03 -- V/C Reference to 25C, ID = 1.0mA -- -- 0.045 2.0 12 -- -- -- -- -- -- 4.0 -- 10 25 V S( ) -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 100 -100 65 20 10 25 100 35 30 -- VGS = 12V, ID = 10A A Parameter BVDSS A nA nC ns VDS = VGS, ID = 1.0mA VDS 15V, IDS = 10A A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 12A VDS = 15V VDD = 15V, ID = 12A VGS =12V, RG = 7.5 nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 2055 936 35 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 12* 48 1.5 92 194 Test Conditions A V ns nC Tj = 25C, IS = 12A, VGS = 0V A Tj = 25C, IF = 12A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max -- -- -- -- 5.0 175 Units C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF57Z30, JANSR2N7491T2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Test Conditions Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-39) Diode Forward Voltage A 30 2.0 -- -- -- -- -- 4.0 100 -100 10 0.024 30 1.5 -- -- -- -- -- 4.0 100 -100 25 0.03 V A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS =0V VGS =12V, ID =10A -- 0.045 -- 0.056 VGS =12V, I D =10A -- 1.5 1.5 V VGS = 0V, IS =12A -- nA 1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF54Z30 (JANSG2N7491T2) 2. Part number IRHF58Z30 (JANSH2N7491T2) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion VDS (V) Range (m) @VGS=0V @VGS=-5V @V GS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8 Energy (MeV) 261 285 344 VDS Cu Br I LET (MeV/(mg/cm 2)) 28 37 60 35 30 25 20 15 10 5 0 Cu Br I 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF57Z30, JANSR2N7491T2 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 10 5.0V 100 1 10 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 20s PULSE WIDTH TJ = 150 C 1 0.1 1000 TJ = 25 C 100 TJ = 150 C 10 V DS =15 15V 20s PULSE WIDTH 5 7 9 11 13 15 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 5.0V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 12A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 2500 Ciss 2000 Coss 1500 1000 500 VGS , Gate-to-Source Voltage (V) 20 3500 C, Capacitance (pF) IRHF57Z30, JANSR2N7491T2 ID = 12A VDS = 24V VDS = 15V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 0 1 10 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED ID, Drain-to-Source Current (A) TJ = 25 C ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) TJ = 150 C 10 1 V GS = 0 V 0.1 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com BY RDS(on) 100s 10 1ms 10ms Tc = 25C Tj = 150C Single Pulse 1 2.4 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHF57Z30, JANSR2N7491T2 Pre-Irradiation 16 LIMITED BY PACKAGE VGS ID , Drain Current (A) RD VDS RG 12 D.U.T. + -V DD V GS Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHF57Z30, JANSR2N7491T2 15V L VDS D.U.T. RG IAS VGS 20V TOP 1250 + - VDD Fig 12a. Unclamped Inductive Test Circuit BOTTOM A 750 500 250 0 25 V(BR)DSS ID 5.4A 9.6A 12A 1000 DRIVER 0.01 tp EAS , Single Pulse Avalanche Energy (mJ) 1500 50 75 100 125 150 Starting TJ , Junction Temperature ( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHF57Z30, JANSR2N7491T2 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 20V, starting TJ = 25C, L= 7.2mH Peak IL = 12A, VGS = 12V A I SD 12A, di/dt 135A/s, VDD 30V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 24 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com