JANSH2N7491T2 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 12*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 10

IDM Pulsed Drain Current À48

PD @ TC = 25°C Max. Power Dissipation 25 W

Linear Derating Factor 0.2 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á520 mJ

IAR Avalanche Current À12 A

EAR Repetitive Avalanche Energy À2.5 mJ

dv/dt Peak Diode Recovery dv/dt Â3.0 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 ( 0.063 in./1.6mm from case for 10s)

Weight 0.98 (Typical) g

Pre-Irradiation

International Rectifier’s R5TM technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm2)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

oC

A

04/25/06

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Features:

nSingle Event Effect (SEE) Hardened

nUltra Low RDS(on)

nIdentical Pre and Post Electrical Test Conditions

nRepetitive Avalanche Ratings

n Dynamic dv/dt Ratings

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nElectrically Isolated

For footnotes refer to the last page

TO-39

* Current is limited by package

RADIATION HARDENED JANSR2N7491T2

POWER MOSFET 30V, N-CHANNEL

THRU-HOLE (TO-39) REF: MIL-PRF-19500/701



55



TECHNOLOGY

IRHF57Z30

Product Summary

Part Number Radiation Level RDS(on) IDQPL Part Number

IRHF57Z30 100K Rads (Si) 0.045Ω 12A* JANSR2N7491T2

IRHF53Z30 300K Rads (Si) 0.045Ω 12A* JANSF2N7491T2

IRHF54Z30 500K Rads (Si) 0.045Ω 12A* JAN SG2 N7491T2

IRHF58Z30 1000K Rads (Si) 0.056Ω 12A* JANSH2N7491T2

PD - 93793E

IRHF57Z30, JANSR2N7491T2 Pre-Irradiation

2www.irf.com

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 5.0

RthJA Junction-to-Ambient — — 175 Typical socket mount

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier web site.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 12*

ISM Pulse Source Current (Body Diode) À——48

VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 12A, VGS = 0V Ã

trr Reverse Recovery Time — — 92 ns Tj = 25°C, IF = 12A, di/dt ≤100A/µs

QRR Reverse Recovery Charge — — 194 nC VDD ≤ 25V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D.

A

* Current is limited by package

nA

Ω

Ã

nH

ns

µA

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.03 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.045 ΩVGS = 12V, ID = 10A

Resistance

VGS(th) Gate Threshold Voltage 2.0 — 4. 0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 12 — — S ( )V

DS ≥ 15V, IDS = 10A Ã

IDSS Zero Gate Voltage Drain Current — — 10 VDS= 24V ,VGS=0V

——25 V

DS = 24V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 65 VGS =12V, ID = 12A

Qgs Gate-to-Source Charge — — 20 nC VDS = 15V

Qgd Gate-to-Drain (‘Miller’) Charge — — 10

td(on) Turn-On Delay Time — — 25 VDD = 15V, ID = 12A

trRise Time — — 100 VGS =12V, RG = 7.5Ω

td(off) Turn-Off Delay Time — — 35

tfFall Time — — 30

LS + LDTotal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss Input Capacitance — 2055 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 936 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 35 —

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Pre-Irradiation IRHF57Z30, JANSR2N7491T2

T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 30 — 30 — V VGS = 0V, ID = 1.0mA

VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 24V, VGS =0V

RDS(on) Static Drain-to-Source Ã — 0.024 — 0.03 Ω VGS =12V, ID =10A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source Ã — 0.045 — 0.056 Ω VGS =12V, ID =10A

On-State Resistance (TO-39)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF54Z30 (JANSG2N7491T2)

2. Part number IRHF58Z30 (JANSH2N7491T2)

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage Ã — 1.5 — 1.5 V VGS = 0V, IS =12A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

I on L ET Energy Range VDS (V)

(MeV/(mg/cm 2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

Cu 28 261 40 30 30 30 25 15

Br 37 285 37 30 30 30 23 15

I 60 344 33 25 25 20 15 8

T able 2. Single Event Effect Safe Operating Area

0

5

10

15

20

25

30

35

-20-15-10-50

VGS

VDS

Cu

Br

I

IRHF57Z30, JANSR2N7491T2 Pre-Irradiation

4www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

15

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

1

10

100

1000

57911 13 15

V = 15V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

12V

12A

1

10

100

1000

0.1 1 10 100

20µs PU LSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain -to-Sou rce Vol tage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

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Pre-Irradiation IRHF57Z30, JANSR2N7491T2

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

500

1000

1500

2000

2500

3000

3500

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

Crss

Coss

Ciss

010 20 30 40 50 60

0

4

8

12

16

20

Q , Tota l G a te C harge (n C)

V , Gate- to- Source Voltage ( V )

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

12A

V = 15V

DS

V = 24V

DS

0.1

1

10

100

0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

1 10 100

VDS , Drain-to-Sour ce Vol tage ( V)

1

10

100

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150° C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA LIMITED

100µs

BY RDS(on)

IRHF57Z30, JANSR2N7491T2 Pre-Irradiation

6www.irf.com

Fig 10a. Switching Time Test Circuit

V

DS

9

0%

1

0%

V

GS t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+

-

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1. Du ty facto r D = t / t

2. Peak T =P x Z + T

1 2

JDM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SIN GLE PU LSE

(TH ER M AL RESPO N SE)

VGS

25 50 75 100 125 150

0

4

8

12

16

T , C a se Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

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Pre-Irradiation IRHF57Z30, JANSR2N7491T2

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T. V

D

S

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

12 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150

0

250

500

750

1000

1250

1500

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

5.4A

9.6A

12A

.

VGS

IRHF57Z30, JANSR2N7491T2 Pre-Irradiation

8www.irf.com

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

24 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 20V, starting TJ = 25°C, L= 7.2mH

Peak IL = 12A, VGS = 12V

Â ISD ≤ 12A, di/dt ≤ 135A/µs,

VDD ≤ 30V, T J ≤ 150°C

Case Outline and Dimensions — TO-205AF (Modified T O-39)

Footnotes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/2006

LEGEND

1- SOURCE

2- GATE

3- DRAIN