1
GA100TS60SF
Bulletin I27201 rev. A 01/06
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Absolute Maximum Ratings
VCES Collector-to-Emitter Voltage 600 V
ICContinuos Collector Current @ TC = 25°C 220 A
@ TC = 130°C 100
ICM Pulsed Collector Current 440
ILM Peak Switching Current 440
VGE Gate-to-Emitter Voltage ± 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
PDMaximum Power Dissipation @ TC = 25°C 780 W
@ TC = 100°C 312
Parameters Max Units
•Standard Speed PT Igbt Technology
• Fred PT Antiparallel diodes with Fast
recovery
• Very Low Conduction Losses
•Al
2O3 DBC
• UL Pending
Features
INT-A-PAK
•Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency
up to 1 KHz
• Very low junction-to-case thermal
resistance
• Low EMI
Benefits
VCES = 600V
IC = 220A DC
VCE(on) typ. = 1.39V
@ IC = 200A TJ = 25°C
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GA100TS60SF
Bulletin I27201 rev. A 01/06
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TJOperating Junction Temperature Range - 40 150 °C
TSTG Storage Temperature Range - 40 125
RthJC Junction-to-Case per Switch 0.16 °C/ W
Per Diode 0.48
RthCS Case-to-Sink Per Module 0.1
T Mounting torque Case to heatsink 4 Nm
Case to terminal 1, 2, 3 3
Weight 185 g
VBRCES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 1mA
VCE(on) Collector-to-Emitter Voltage 1.11 1.28 VGE = 15V, IC = 100A
1.39 IC = 200A
1.08 1.22 VGE = 15V, IC = 100A, TJ = 125°C
VGE(th) Gate Threshold Voltage 3 6 IC = 0.25mA
ICES Collector-to-Emiter Leakage 1 mA VGE = 0V, VCE = 600V
Current 10 VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage drop 1.44 1.96 V IC = 100A, VGE = 0V
1.25 1.54 IC = 100A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ± 250 nA VGE = ± 20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
QgTotal Gate Charge 640 700 nC IC = 100A
Qge Gate-Emitter Charge 108 120 VCC = 400V
Qgc Gate-Collector Charge 230 300 VGE = 15V
trRise Time 0.45 µs IC = 100A, VCC = 480V, VGE = 15V
tfFall Time 1.0 Rg = 15Ω
Eon Turn-On Switching Energy 4 6 mJ
Eoff Turn-Off Switching Energy 23 29
Ets Total Switching Energy 27 35
Eon Turn-On Switching Energy 6 12 mJ IC = 100A, VCC = 480V, VGE = 15V
Eoff Turn-Off Switching Energy 35 40 Rg = 15Ω, TJ = 125°C
Ets Total Switching Energy 41 52
Cies Input Capacitance 16250 pF VGE = 0V
Coes Output Capacitance 1040 VCC = 30V
Cres Reverse Transfer Capacitance 190 f = 1.0 MHz
trr Diode Reverse Recovery Time 91 155 ns I F = 50A, dIF/dt = 200A/µs
Irr Diode Peak Reverse Current 10.6 15 A VRR = 200V
Qrr Diode Recovery Charge 500 900 nC
trr Diode Reverse Recovery Time 180 344 ns I F = 50A, dIF/dt = 200A/µs
Irr Diode Peak Reverse Current 17 20.5 A VRR = 200V
Qrr Diode Recovery Charge 1633 2315 nC TJ = 125°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Thermal- Mechanical Specifications
Parameters Min Typ Max Units
Bulletin I27201 rev. A 01/06
3
GA100TS60SF
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Fig. 1 - Typical Output Characteristics
IC, Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
IC , Collector-to-Emitter Current (A)
VGE, Gate-to-Emitter Voltage (V)
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
VCE, Collector-to-Emitter Voltage (V)
TJ, Junction Temperature (°C)
Fig. 3 - Maximum Collector Current
vs. Case Temperature
Maximum DC Collector Current (A)
TC, Case Temperature (°C)
1
10
100
1000
5.5 6.5 7.5 8.5
Vce = 10V
380µs PULSE WIDTH
T = 25˚C
T = 125˚C
J
J
0.7
0.9
1.1
1.3
1.5
25 50 75 100 125 150
I = 50A
I = 100A
I = 200A
C
C
10
100
1000
0.6 0.8 1 1.2 1.4 1.6 1.8
Tj = 25˚C
Vge = 15V
Tj = 125˚C
0
40
80
120
160
200
240
25 50 75 100 125 150
GA100TS60SF
Bulletin I27201 rev. A 01/06
4www.irf.com
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
VGE, Gate-to-Emitter Voltage (V)
QG, Total Gate Charge (nC)
Switching Losses (mJ)
RG, Gate Reistance (Ω)
Switching Losses (mJ)
IC, Collector-to-Emitter Current (A)
0
5
10
15
20
0 100 200 300 400 500 600 700
Vcc = 400V
Ic = 100A
0
5
10
15
20
25
30
35
10 20 30 40 50
Eon
Eoff
Tj = 25˚C, Vce = 480V
Vge = 15V, Ic = 100A
Fig. 6 - Typical Switching Losses vs Gate
Resistance
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
0
10
20
30
40
50
60
0 40 80 120 160
Eon
Eoff
Tj = 125˚C
Vce = 480V
Vge = 15V
Rge = 15
Ω
Bulletin I27201 rev. A 01/06
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GA100TS60SF
www.irf.com
Fig. 8 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Instantaneous Forward Current - I F (A)
Forward Voltage Drop- VFM (V)
t rr (ns)
dif /dt - A/µs
Fig. 9 - Typical Reverse Recovery vs. dif /dt
I RRM (A)
dif /dt - A/µs
Fig. 10 - Typical Reverse Recovery Current
vs. dif /dt
Q RR (nC)
dif /dt - A/µs
Fig. 11 - Typical Stored Charge vs. dif /dt
100
1000
10000
100 1000
Vr = 200V
If = 50A, Tj = 125˚C
If = 50A, Tj = 25˚C
10
100
1000
100 1000
Vr = 200V
If = 50A, Tj = 125˚C
If = 50A, Tj = 25˚C
1
10
100
100 1000
Vr = 200V
If = 50A, Tj = 125˚C
If = 50A, Tj = 25˚C
1
10
100
1000
0 0.5 1 1.5 2 2.5
Tj = 25˚C
Tj = 125˚C
GA100TS60SF
Bulletin I27201 rev. A 01/06
6www.irf.com
Device Code
Ordering Information Table
Outline Table
GA 100 T S 60 S F
1 2 34 5 6 7
1- Essential Part Number IGBT modules
2- Current rating (100 = 100A)
3- Circuit Configuration (T = Half Bridge)
4- Int-A-Pak
5- Voltage Code (60 = 600V)
6- Speed/ Type (S = Standard Speed IGBT)
7- Diode Type
All dimensions are in millimeters
Bulletin I27201 rev. A 01/06
7
GA100TS60SF
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/06
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
