VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch (mm) CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a "flat" window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH CHARACTERISTIC VTB6061JH TEST CONDITIONS Min. Typ. 260 350 UNITS Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 490 mV VOC Temperature Coefficient 2850 K -2.0 mV/C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .10 G .12 A .23 2.0 %/C nA RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/C CJ Junction Capacitance H = 0, V = 0 8.0 nF SR Sensitivity 365 nm TC R SH range Spectral Application Range 0.1 320 A/W 1100 nm p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 55 Degrees NEP Noise Equivalent Power 5.7 x 10-14 (Typ.) Specific Detectivity 1.1 x 10 13 (Typ.) W Hz cm Hz W D* 2 PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 920 nm 40 V Phone: 877-734-6786 Fax: 450-424-3413 37 www.perkinelmer.com/opto