MSTC25 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 25Amp Applications y y y y Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 y y y 5 4 y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC25-08 MSTC25-12 MSTC25-16 800V 1200V 1600V 900V 1300V 1700V Maximum Ratings Symbol Conditions Values Units ITAV Sine 180o;Tc=85 25 A ITSM TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 550 480 A i2t TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 1500 1150 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V -40 to 125 -40 to 125 Tvj Tstg Mt To terminals(M5) 315% Nm Ms To heatsink(M6) 515% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.9/0.45 /W Rth(c-s) per thyristor / per module 0.2/0.1 /W Thermal Characteristics MSTC25 - Rev 0 Oct, 2011 www.microsemi.com 1/4 MSTC25 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25 ITM =75A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.8 V 10 mA VTO rT For power-loss calculations only (TVJ =125) TVJ =TVJM 0.9 12 V m VGT TVJ =25 , VD =6V 2.5 V IGT TVJ =25 , VD =6V 150 mA VGD TVJ =125 , VD =2/3VDRM 0.25 V IGD TVJ =125 , VD =2/3VDRM 5 mA IL IH TVJ =25 , RG = 33 TVJ =25 , VD =6V 250 100 400 200 tgd TVJ =25, IG=1A, diG/dt=1A/us TVJ =TVJM 1 mA mA us 80 us IRRM/IDRM tq MSTC25 - Rev 0 Oct, 2011 Min. Max. Units www.microsemi.com 2/4 MSTC25 Performance Curves 75 50 W A sin.180 40 DC rec.120 DC rec.60 50 30 rec.30 sin.180 rec.120 20 25 rec.60 rec.30 10 PTAV 0 ITAVM 0 ITAV 10 20 30 A 40 0 0 Tc Fig1. Power dissipation 50 100 130 Fig2.Forward Current Derating Curve 1000 1.2 / W 50HZ A Zth(j-S) Zth(j-C) 0.8 500 0.4 0 0 0.001 t 0.01 0.1 1 10 S 100 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 100 Typ. A 75 125 max. 50 25 25 IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics MSTC25 - Rev 0 Oct, 2011 www.microsemi.com 3/4 MSTC25 100 1/2*MSCT25 V 20V;20 10 VGT 1 PG(tp) -40 Tvj 25 125 VG VGD125 IGT IGD125 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 x Dimensions in mm MSTC25 - Rev 0 Oct, 2011 www.microsemi.com 4/4