RN2105CT - Toshiba - Datasheet.Live

RN2101CT ~ RN2106CT

2009-04-17

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101CT,RN2102CT,RN2103CT

RN2104CT,RN2105CT,RN2106CT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

• Complementary to RN1101CT to RN1106CT

Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −20 V

Collector-emitter voltage

RN2101CT to 2106CT

VCEO −20 V

RN2101CT to 2104CT −10

Emitter-base voltage

RN2105CT, 2106CT

VEBO

−5

Collector current IC −50 mA

Collector power dissipation PC 50 mW

Junction temperature Tj 150 °C

Storage temperature range

RN2101CT to 2106CT

Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-1J1A

Weight: 0.75 mg (typ.)

Type No. R1 (kΩ) R2 (kΩ)

RN2101CT 4.7 4.7

RN2102CT 10 10

RN2103CT 22 22

RN2104CT 47 47

RN2105CT 2.2 47

RN2106CT 4.7 47

３

１２

0.25±0.03

1.0±0.05

0.65±0.02

0.35±0.02

0.15±0.03

0.25±0.03

0.5±0.03

0.6±0.05

0.38 +0.02

-0.03

0.05±0.03

CST3

1.BASE

2.EMITTER

3.COLLECOTR

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RN2101CT ~ RN2106CT

2009-04-17

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

ICBO V

CB = −20 V, IE = 0 ⎯ ⎯ −100

Collector cut-off current RN2101CT to 2106CT

ICEO V

CE = −20 V, IB = 0 ⎯ ⎯ −500

RN2101CT −0.89 ⎯ −1.33

RN2102CT −0.41 ⎯ −0.63

RN2103CT −0.18 ⎯ −0.29

RN2104CT

VEB = −10 V, IC = 0

−0.088 ⎯ −0.133

RN2105CT −0.085 ⎯ −0.127

Emitter cut-off current

RN2106CT

IEBO

VEB = −5 V, IC = 0

−0.08 ⎯ −0.121

RN2101CT 30 ⎯ ⎯

RN2102CT 60 ⎯ ⎯

RN2103CT 100 ⎯ ⎯

RN2104CT 120 ⎯ ⎯

RN2105CT 120 ⎯ ⎯

DC current gain

RN2106CT

hFE VCE = −5 V,

IC = −10 mA

120 ⎯ ⎯

Collector-emitter

saturation voltage RN2101CT to 2106CT VCE (sat) IC = −5 mA,

IB = −0.25 mA ⎯ ⎯ −0.15 V

RN2101CT −1.0 ⎯ −2.0

RN2102CT −1.0 ⎯ −2.2

RN2103CT −1.1 ⎯ −2.7

RN2104CT −1.2 ⎯ −3.6

RN2105CT −0.6 ⎯ −1.1

Input voltage (ON)

RN2106CT

VI (ON) VCE = −0.2 V,

IC = −5 mA

−0.6 ⎯ −1.2

RN2101CT to 2104CT −0.8 ⎯ −1.5

Input voltage (OFF)

RN2105CT, 2106CT

VI (OFF) VCE = −5 V,

IC = −0.1 mA −0.4 ⎯ −0.8

Collector output

capacitance RN2101CT to 2106CT Cob VCB = −10 V, IE = 0,

f = 1 MHz ⎯ 1.2 ⎯ pF

RN2101CT 3.76 4.7 5.64

RN2102CT 8 10 12

RN2103CT 17.6 22 26.4

RN2104CT 37.6 47 56.4

RN2105CT 1.76 2.2 2.64

Input resistor

RN2106CT

R1 ⎯

3.76 4.7 5.64

kΩ

RN2101CT to 2104CT 0.8 1.0 1.2

RN2105CT 0.0376 0.0468 0.0562

Resistor ratio

RN2106CT

R1/R2 ⎯

0.08 0.1 0.12

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IC - VI(ON)

-0.1

-1

-10

-100

-0.1 -1 -10 -100

INPUT VOLTAGE VI(ON) ( V)

EMMITER COMMON

VCE= -0.2V

-25

RN2101CT IC - VI(ON)

-0.1

-1

-10

-100

-0.1 -1 -10 -100

INPUT VOLTAGE VI(ON) ( V)

EMMITER COMMON

VCE= -0.2V

-25

RN2102CT

IC - VI(ON)

-0.1

-1

-10

-100

-0.1 -1 -10 -100

INPUT VOLTAGE VI(ON) ( V)

EMMITER COMMON

VCE= -0.2V

-25

RN2103CT IC - VI(ON)

-0.1

-1

-10

-100

-0.1 -1 -10 -100

INPUT VOLTAGE　VI(ON) ( V)

EMMITER COMMON

VCE= -0.2V

-25

RN2104CT

IC - VI(ON)

-0.1

-1

-10

-100

-0.1 -1 -10 -100

INPUT VOLTAGE VI(ON) ( V)

EMMITER COMMON

VCE= -0.2V

-25

RN2105CT IC - VI(ON)

-0.1

-1

-10

-100

-0.1 -1 -10 -100

INPUT VOLTAGE　VI(ON) ( V)

EMMITER COMMON

VCE= -0.2V

-25

RN2106CT

COLLECTOR CURRENT IC

(

)

COLLECTOR CURRENT IC

(

)

COLLECTOR CURRENT IC

(

)

COLLECTOR CURRENT IC

(

)

COLLECTOR CURRENT IC

(

)

COLLECTOR CURRENT IC

(

)

Ta=100°C Ta=100°C

Ta=100°C

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2009-04-17

IC - VI(OFF)

-10

-100

-1000

-10000

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI(OFF) ( V)

EMITTER

COMMON

VCE= -5V

25 -25

RN2101CT IC - VI(OFF)

-10

-100

-1000

-10000

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI(OFF) ( V)

EMITTER

COMMON

VCE= -5V

IC - VI(OFF)

-10

-100

-1000

-10000

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI(OFF) ( V)

EMITTER

COMMON

VCE= -5V

25 -25

RN2103CT IC - VI(OFF)

-10

-100

-1000

-10000

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE VI(OFF) ( V)

EMITTER

COMMON

VCE= -5V

-25

RN2104CT

IC - VI(OFF)

-10

-100

-1000

-10000

-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4

INPUT VOLTAGE　VI(OFF) ( V)

EMITTER

COMMON

VCE= -5V

-25

IC - VI(OFF)

-10

-100

-1000

-10000

-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4

INPUT VOLTAGE VI(OFF) ( V)

EMITTER

COMMON

VCE= -5V

25 -25

Ta=100°C Ta=100°C

Ta=100°C

Ta=100°C Ta=100°C

COLLECTOR CURRENT IC

(μ

)

COLLECTOR CURRENT IC

(μ

)

COLLECTOR CURRENT IC

(μ

)

COLLECTOR CURRENT IC

(μ

)

COLLECTOR CURRENT IC

(μ

)

COLLECTOR CURRENT IC

(μ

)

-25

RN2102CT

RN2105CT RN2106CT

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RN2101CT ~ RN2106CT

2009-04-17

hFE - IC

100

1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN hFE

EMITTER COMMON

VCE= -5V

-25

RN2101CT hFE - IC

100

1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN hFE

EMITTER COMMON

VCE= -5V

-25

RN2102CT

hFE - IC

100

1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN hFE

EMITTER COMMON

VCE= -5V

-25

RN2963FSRN2103CT hFE - IC

100

1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN hFE

EMITTER COMMON

VCE= -5V

-25

RN2104CT

hFE - IC

100

1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

DC CURRENT GAIN hFE

EMITTER COMMON

VCE= -5V

-25

hFE - IC

100

1000

-1 -10 -100

COLLECTOR CURRENT IC (mA)

DC CURRENT GAIN hFE

EMITTER COMMON

VCE= -5V

-25

Ta=100°C

RN2105CT RN2106CT

Ta=100°C

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RN2101CT ~ RN2106CT

2009-04-17

VCE(sat) - IC

-10

-100

-1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE　VCE(sat) (mV)

EMITTER COMMON

IC / IB=20

-25

RN2101CT VCE(sat) - IC

-10

-100

-1000

-1 -10 -100

COLLECTOR CURRENT IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE　VCE(sat) (mV)

EMITTER COMMON

IC / IB=20

-25

RN2102CT

VCE(sat) - IC

-10

-100

-1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE　VCE(sat) (mV)

EMITTER COMMON

IC / IB=20

-25

RN2103CT VCE(sat) - IC

-10

-100

-1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE　VCE(sat) (mV)

EMITTER COMMON

IC / IB=20

-25

VCE(sat) - IC

-10

-100

-1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE　VCE(sat) (mV)

EMITTER COMMON

IC / IB=20

-25

RN2105CT VCE(sat) - IC

-10

-100

-1000

-1 -10 -100

COLLECTOR CURRENT　IC (mA)

COLLECTER-EMITTOR SATURATION

VOLTAGE　VCE(sat) (mV)

EMITTER COMMON

IC / IB=20

-25

RN2106CT

Ta=100°C Ta=100°C

Ta=100°C

Ta=100°C Ta=100°C

RN2104CT

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RN2101CT ~ RN2106CT

2009-04-17

Type Name Marking

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Type name

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RN2101CT ~ RN2106CT

2009-04-17

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

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