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©2009-2010 by RF Monolithics, Inc. XVT9009 - 2/2/10
Electrical Characteristics
Characteristic Sym Notes Minimum Typical Maximum Units
Nominal Frequency Fo 20.000000 MHz
Storage Temperature -55 +125 °C
Operating Temperature Range -40 +85 °C
Power Supply Volt age VDD 2.97 3.30 3.63 V
Output Voltage with Load 10 pF||10 KΩVOUT 1.0 VP-P
Output Wave form Sinewave
Power Supply Current IDD 8.0 mA
Control Voltage VCON 1.65 ±1.0 V
Control Voltage Input Impedance 100K ohms
Frequency Tolerance, VCONTROL=1.65 V (as received) ±2.0 ppm maximum @ 25 °C ±3 °C
Frequency S tability versus:
Temperature, -40 to 85 °C ±0.5 ppm
Supply Voltage, 2.97 to 3.63 V ±0.2 ppm
Load, 10 pF||10 KΩ ±10% ±0.2 ppm
Control Voltage Frequency Range (1.65 ±1.0 V) ±5 ppm
Start Up Time, 90% of final RF level in VP-P 2.0 ms
First Year Aging @ 25 °C ±1 ppm
10 Year Aging @ 25 °C ±5 ppm
Harmonics -5.0 dBc
SSB Phase Noise:
@ 1 kHz Carrier Offset -135 dBc/Hz
@ 10 kHz Carrier Offset -145 dBc/Hz
@ 100 kHz Carrier Offset -150 dBc/Hz
Stanard Shipping Quantity on 180 mm (7”) Reel 500 units
Lid Symbolization 9009 // YWWS
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Excellent Fr equency Stability & Low Phase Noise
• 7 x 5 x 2 mm Surface-Mount Case
• Complies with Directive 2002/95/EC (RoHS)
20 MHz
VCTCXO
XVT9009
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing process , and specific ations of this device are subject to change without notice.
Pb
Preliminary