© 2018 Kingbright. All Rights Reserved. Spec No: DSAL3679 / 1203000588 Rev No: V.10 Date: 03/06/2018 Page 1 / 4
DESCRIPTION
zMade with NPN silicon phototransistor chips
FEATURES
z3.0 x 2.0 x 1.0 mm right angle SMD LED, 1.0 mm
thickness
zMechanically and spectrally matched to the infrared
emitting LED lamp
zBlue transparent lens
zPackage: 2000 pcs / reel
zMoisture sensitivity level: 3
zTinned pads for improved solderability
zRoHS compliant
APPLICATIONS
zInfrared applied systems
zOptoelectronic switches
zPhotodetector control circuits
zSensor technology
PACKAGE DIMENSIONS
APA3010P3BT-GX
3.0 mm x 1.0 mm Right Angle Phototransistor
RECOMMENDED SOLDERING PATTERN
(units : mm; tolerance : ± 0.1)
Note:
1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.
ABSOLUTE MAXIMUM RATINGS at TA=25°C
Parameter Units
Collector-to-Emitter Voltage V
Emitter-to-Collector Voltage V
Power Dissipation at(or below) 25°C Free Air Temperature mW
Operating Temperature °C
Storage Temperature °C
Max.Ratings
30
5
100
-40 to +85
-40 to +85
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.15(0.006") unless otherwise noted.
3. The specifications, characteristics and technical data described in the datasheet are subject to
change without prior notice.
4. The device has a single mounting surface. The device must be mounted according to the specifications.
© 2018 Kingbright. All Rights Reserved. Spec No: DSAL3679 / 1203000588 Rev No: V.10 Date: 03/06/2018 Page 2 / 4
ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C
APA3010P3BT-GX
Parameter Symbol Min. Typ. Max. Units Test Conditions
Collector-to-Emitter Breakdown Voltage V BR CEO 30 - - V IC = 100uA
Ee = 0mW/cm2
Emitter-to-Collector Breakdown Voltage VBR ECO 5 - - V IE = 100uA
Ee = 0mW/cm2
Collector-to-Emitter Saturation Voltage VCE (SAT) - - 0.8 V IC = 2mA
Ee = 20mW/cm2
Collector Dark Current ICEO - - 100 nA VCE = 10V
Ee = 0mW/cm2
Rise Time(10% to 90%) TR - 15 - µS
VCE = 5V
IC = 1mA
RL = 1000Ω
Fall Time(90% to 10%) TF - 15 - µS
On State Collector Current I(ON ) 0.1 0.3 - mA VCE = 5V
Ee = 1mW/cm2
λ = 940nm
Range of spectral bandwidth λ0.1 670 - 1070 nm -
Wavelength of peak Sensitivity λp - 940 - nm -
Angle of half sensitivity 2θ1/2 - 160 - deg -
0.5 0.5
90°
15°
0°
30°
45°
60°
75°
-15°
-30°
-45°
-60°
-75°
-90°
0.01.0 1.0
T
a
= 25 °C
Relative sensitivity
0%
20%
40%
60%
80%
100%
600 700 800 900 1000 1100 1200
T
a
= 25 °C
Wavelength (nm)
Relative spectral sensitivity (a. u.)
TECHNICAL DATA
RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT
© 2018 Kingbright. All Rights Reserved. Spec No: DSAL3679 / 1203000588 Rev No: V.10 Date: 03/06/2018 Page 3 / 4
APA3010P3BT-GX
TAPE SPECIFICATIONS (units : mm)
REEL DIMENSION (units : mm)
REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESS
Notes:
1. Don't cause stress to the LEDs while it is exposed to high temperature.
2. The maximum number of reflow soldering passes is 2 times.
3. Reflow soldering is recommended. Other soldering methods are not recommended as they might
cause damage to the product.
0.01
0.1
1
10
0.01 0.1 1 10
V
CE
=5V
T
a
= 25 °C
Irradiance Ee (mW/cm
2
)
Collector current Ic (mA)
0
25
50
75
100
125
0 20406080100
Ambient temperature (°C)
Collector power dissipation
Pd (mW)
0
20
40
60
80
100
120
140
160
0 20406080100
V
CE
=5V
Ee=1mW/cm
2
Ambient temperature (°C)
Relative collector current (%)
0
0.1
0.2
0.3
0.4
0.5
012345
T
a
= 25 °C
Collector-emitter voltage V
CE
(V)
Collector current (mA)
Ee = 0.25mW/cm
2
Ee = 0.5mW/cm
2
Ee = 1mW/cm
2
0.01
0.1
1
10
0 5 10 15 20 25 30
T
a
= 25 °C
Collector-emitter voltage V
CE
(V)
Collector dark current (nA)
0.1
1
10
100
1000
0 25 50 75 100
V
CE
= 20V
Ee = 0
Ambient temperature (°C)
Collector dark current (nA)
PHOTOTRANSISTOR
Collector Current vs.
Irradiance
Relative Collector Current vs.
Ambient Temperature
Collector Dark Current vs.
Ambient Temperature
Collector Current vs.
Collector-Emitter Voltage
Collector Power Dissipation vs.
Ambient Temperature
Collector Dark Current vs.
Collector-Emitter Voltage
TECHNICAL DATA
© 2018 Kingbright. All Rights Reserved. Spec No: DSAL3679 / 1203000588 Rev No: V.10 Date: 03/06/2018 Page 4 / 4
PACKING & LABEL SPECIFICATIONS
APA3010P3BT-GX
PRECAUTIONARY NOTES
1. The information included in this document reflects representative usage scenarios and is intended for technical reference only.
2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to
the latest datasheet for the updated specifications.
3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If
customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.
4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening
liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance.
5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright.
6. All design applications should refer to Kingbright application notes available at http://www.KingbrightUSA.com/ApplicationNotes
